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1. WO2020241238 - 半導体装置

公開番号 WO/2020/241238
公開日 03.12.2020
国際出願番号 PCT/JP2020/018953
国際出願日 12.05.2020
IPC
H01L 23/14 2006.1
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
23半導体または他の固体装置の細部
12マウント,例.分離できない絶縁基板
14材料またはその電気特性に特徴のあるもの
H01L 25/07 2006.1
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
25複数の個々の半導体または他の固体装置からなる組立体
03すべての装置がグループH01L27/00~H01L51/00の同じサブグループに分類される型からなるもの,例.整流ダイオードの組立体
04個別の容器を持たない装置
07装置がグループH01L29/00に分類された型からなるもの
H01L 25/18 2006.1
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
25複数の個々の半導体または他の固体装置からなる組立体
18装置がグループH01L27/00~H01L51/00の同じメイングループの2つ以上の異なるサブグループに分類される型からなるもの
CPC
H01L 23/3735
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation ; ; Temperature sensing arrangements
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
373Cooling facilitated by selection of materials for the device ; or materials for thermal expansion adaptation, e.g. carbon
3735Laminates or multilayers, e.g. direct bond copper ceramic substrates
H01L 23/492
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; ; Selection of materials therefor
488consisting of soldered ; or bonded; constructions
492Bases or plates ; or solder therefor
H01L 23/4924
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; ; Selection of materials therefor
488consisting of soldered ; or bonded; constructions
492Bases or plates ; or solder therefor
4924characterised by the materials
H01L 23/49531
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; ; Selection of materials therefor
488consisting of soldered ; or bonded; constructions
495Lead-frames ; or other flat leads
49517Additional leads
49531the additional leads being a wiring board
H01L 23/49555
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; ; Selection of materials therefor
488consisting of soldered ; or bonded; constructions
495Lead-frames ; or other flat leads
49541Geometry of the lead-frame
49548Cross section geometry
49551characterised by bent parts
49555the bent parts being the outer leads
H01L 23/49562
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; ; Selection of materials therefor
488consisting of soldered ; or bonded; constructions
495Lead-frames ; or other flat leads
49541Geometry of the lead-frame
49562for devices being provided for in H01L29/00
出願人
  • ローム株式会社 ROHM CO., LTD. [JP]/[JP]
発明者
  • 井上 開人 INOUE Kaito
  • 木村 明寛 KIMURA Akihiro
代理人
  • 臼井 尚 USUI Takashi
  • 鈴木 泰光 SUZUKI Yasumitsu
優先権情報
2019-09855027.05.2019JP
公開言語 (言語コード) 日本語 (ja)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEUR
(JA) 半導体装置
要約
(EN) A semiconductor device A1 according to the present disclosure is provided with: a support member 2; a metal member 30 which has a main surface 301 and a back surface 302, while being bonded to the support member 2 so that the back surface 302 faces the support member 2, said main surface 301 and back surface 302 being at a distance from each other in the z direction; a second bonding layer 42 which bonds the support member 2 and the metal member 30 to each other; a semiconductor element 10 which faces the main surface 301 and is bonded to the metal member 30; and a sealing member 7 which covers the support member 2, the metal member 30, the second bonding layer 42 and the semiconductor element 10. The metal member 30 comprises a first metal body 31 that is formed of a first metal material and a second metal body 32 that is formed of a second metal material; and there is a boundary between the first metal body 31 and the second metal body 32. The linear expansion coefficient of the second metal material is lower than the linear expansion coefficient of the first metal material. The present invention is able to provide a semiconductor device having improved reliability by relaxing the thermal stress during the time when a semiconductor element generates heat.
(FR) Un dispositif à semi-conducteur A1 selon la présente invention comprend : un élément de support 2 ; un élément métallique 30 qui a une surface principale 301 et une surface arrière 302, tout en étant lié à l'élément de support 2 de telle sorte que la surface arrière 302 fait face à l'élément de support 2, ladite surface principale 301 et la surface arrière 302 étant à une distance l'une de l'autre dans la direction z ; une seconde couche de liaison 42 qui lie l'élément de support 2 et l'élément métallique 30 l'un à l'autre ; un élément semi-conducteur 10 qui fait face à la surface principale 301 et est lié à l'élément métallique 30 ; et un élément d'étanchéité 7 qui recouvre l'élément de support 2, l'élément métallique 30, la seconde couche de liaison 42 et l'élément semi-conducteur 10. L'élément métallique 30 comprend un premier corps métallique 31 qui est formé d'un premier matériau métallique et un second corps métallique 32 qui est formé d'un second matériau métallique ; et il existe une délimitation entre le premier corps métallique 31 et le second corps métallique 32. Le coefficient de dilatation linéaire du second matériau métallique est inférieur au coefficient de dilatation linéaire du premier matériau métallique. La présente invention peut fournir un dispositif à semi-conducteur ayant une fiabilité améliorée en relâchant la contrainte thermique pendant le temps lorsqu'un élément semi-conducteur génère de la chaleur.
(JA) 本開示の半導体装置A1は、支持部材2と、z方向において離間した主面301および裏面302を有し、裏面302が支持部材2に対向して、支持部材2に接合された金属部材30と、支持部材2と金属部材30とを接合する第2接合層42と、主面301に対向し、金属部材30に接合された半導体素子10と、支持部材2、金属部材30、第2接合層42および半導体素子10を覆う封止部材7と、を備えている。金属部材30は、第1金属材料からなる第1金属体31および第2金属材料からなる第2金属体32を含み、かつ、第1金属体31と第2金属体32との境界がある。第2金属材料の線膨張係数は、第1金属材料の線膨張係数よりも小さい。半導体素子の発熱時の熱応力を緩和することにより、信頼性の向上を図った半導体装置を提供できる。
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JP2021522179This application is not viewable in PATENTSCOPE because the national phase entry has not been published yet or the national entry is issued from a country that does not share data with WIPO or there is a formatting issue or an unavailability of the application.
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