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1. WO2020241010 - スパッタリング装置、薄膜製造方法

公開番号 WO/2020/241010
公開日 03.12.2020
国際出願番号 PCT/JP2020/012902
国際出願日 24.03.2020
IPC
C23C 14/35 2006.1
C化学;冶金
23金属質材料への被覆;金属質材料による材料への被覆;化学的表面処理;金属質材料の拡散処理;真空蒸着,スパッタリング,イオン注入法,または化学蒸着による被覆一般;金属質材料の防食または鉱皮の抑制一般
C金属質への被覆;金属材料による材料への被覆;表面への拡散,化学的変換または置換による,金属材料の表面処理;真空蒸着,スパッタリング,イオン注入法または化学蒸着による被覆一般
14被覆形成材料の真空蒸着,スパッタリングまたはイオン注入法による被覆
22被覆の方法に特徴のあるもの
34スパッタリング
35磁界の適用によるもの,例.マグネトロンスパッタリング
H05H 1/46 2006.1
H電気
05他に分類されない電気技術
Hプラズマ技術;加速された荷電粒子のまたは中性子の発生;中性分子または原子ビームの発生または加速
1プラズマの生成;プラズマの取扱い
24プラズマの発生
46電磁界を用いるもの,例.高周波またはマイクロ波エネルギー
CPC
C23C 14/34
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
C23C 14/3407
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
3407Cathode assembly for sputtering apparatus, e.g. Target
C23C 14/35
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
35by application of a magnetic field, e.g. magnetron sputtering
C23C 14/352
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
35by application of a magnetic field, e.g. magnetron sputtering
352using more than one target
H01J 37/34
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
34operating with cathodic sputtering
H01J 37/3423
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
34operating with cathodic sputtering
3411Constructional aspects of the reactor
3414Targets
3423Shape
出願人
  • 株式会社アルバック ULVAC, INC. [JP]/[JP]
発明者
  • 阪上 弘敏 SAKAUE Hirotoshi
  • 大野 哲宏 OONO Tetsuhiro
代理人
  • 大森 純一 OMORI, Junichi
優先権情報
2019-09946928.05.2019JP
公開言語 (言語コード) 日本語 (ja)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SPUTTERING APPARATUS AND METHOD FOR PRODUCING THIN FILM
(FR) APPAREIL DE PULVÉRISATION ET PROCÉDÉ DE PRODUCTION D’UN FILM MINCE
(JA) スパッタリング装置、薄膜製造方法
要約
(EN) According to the present invention, a sputtering target 14 is uniformly sputtered. The sputtering target 14 is arranged on one surface of a cathode electrode 21; and a plurality of magnet devices 301, 311-314 and 302 are arranged in parallel with each other on the opposite surface. Variable magnets 47, each of which has a composite magnetic field of the magnetic field formed by a basic magnetic force part 71 and the magnetic field formed by an electromagnet part 73, are arranged on both ends of the magnet devices 301, 311-314 and 302; the polarity and the magnetic field strength of the magnetic pole formed in the electromagnet part 73 are controlled by controlling the direction and the magnitude of the excitation current flowing through the electromagnet part 73; the magnetic field strength formed by the variable magnets 47 is decreased by means of increase of a film formation object 13 due to the sputtering; and consequently, the magnetic field strength on a sputtering surface 24 is evened out.
(FR) Selon la présente invention, une cible de pulvérisation (14) est soumise à une pulvérisation uniforme. La cible de pulvérisation (14) est disposée sur la surface d'une électrode cathode (21) ; et une pluralité de dispositifs à aimant (301, 311-314 et 302) sont disposés en parallèle les uns des autres sur la surface opposée. Des aimants variables (47), chacun ayant un champ magnétique composite du champ magnétique formé par une partie force magnétique de base (71) et le champ magnétique formé par une partie électroaimant (73), sont disposés sur les deux extrémités des dispositifs à aimant (301, 311-314 et 302) ; la polarité et la force de champ magnétique du pôle magnétique formé dans la partie électroaimant (73) sont commandées par commande de la direction et de l'amplitude du courant d'excitation circulant dans la partie électroaimant (73) ; la force de champ magnétique formée par les aimants variables (47) est réduite au moyen d'une augmentation d'un objet filmogène (13) en raison de la pulvérisation ; et par conséquent, la force de champ magnétique sur une surface de pulvérisation (24) est uniformisée.
(JA) スパッタリングターゲット14を均一にスパッタリングする。カソード電極21の片面にスパッタリングターゲット14が配置され、反対側の面に複数個の磁石装置301、311~314、302が平行に配置されている。磁石装置301、311~314、302の両端には、基礎磁力部71が形成する磁界と電磁石部73が形成する磁界とが合成された磁界を有する可変磁石47が配置されており、電磁石部73に流れる励磁電流の向きと大きさを制御することで電磁石部73に形成される磁極の極性と磁界強度とを制御して、スパッタリングした成膜対象物13の増加によって、可変磁石47が形成する磁界強度を小さくしてスパッタ面24上の磁界強度を一定にする。
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