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1. WO2020240674 - ワイヤボンディング装置、半導体装置の製造方法、および、半導体装置

公開番号 WO/2020/240674
公開日 03.12.2020
国際出願番号 PCT/JP2019/020960
国際出願日 27.05.2019
IPC
H01L 21/60 2006.1
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
50サブグループH01L21/06~H01L21/326の一つに分類されない方法または装置を用いる半導体装置の組立
60動作中の装置にまたは装置から電流を流すためのリードまたは他の導電部材の取り付け
CPC
H01L 2224/45015
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
44Structure, shape, material or disposition of the wire connectors prior to the connecting process
45of an individual wire connector
45001Core members of the connector
4501Shape
45012Cross-sectional shape
45015being circular
H01L 2224/45144
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
44Structure, shape, material or disposition of the wire connectors prior to the connecting process
45of an individual wire connector
45001Core members of the connector
45099Material
451with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
45138the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
45144Gold (Au) as principal constituent
H01L 2224/4809
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
4805Shape
4809Loop shape
H01L 2224/48451
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
484Connecting portions
4845Details of ball bonds
48451Shape
H01L 2224/48465
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
484Connecting portions
48463the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
48465the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
H01L 2224/78301
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
78Apparatus for connecting with wire connectors
7825Means for applying energy, e.g. heating means
783by means of pressure
78301Capillary
出願人
  • 株式会社新川 SHINKAWA LTD. [JP]/[JP]
発明者
  • 吉野 浩章 YOSHINO Hiroaki
  • 手井 森介 TEI Shinsuke
代理人
  • 特許業務法人YKI国際特許事務所 YKI INTELLECTUAL PROPERTY ATTORNEYS
優先権情報
公開言語 (言語コード) 日本語 (ja)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) WIRE BONDING DEVICE, METHOD FOR MANUFACTURE OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
(FR) DISPOSITIF DE LIAISON DE FIL, PROCÉDÉ DE FABRICATION DE DISPOSITIF SEMI-CONDUCTEUR, ET DISPOSITIF SEMI-CONDUCTEUR
(JA) ワイヤボンディング装置、半導体装置の製造方法、および、半導体装置
要約
(EN) This wire bonding device is provided with a capillary, a movement mechanism which moves the capillary, and a control unit which controls the driving of the movement mechanism. The control unit at least causes the execution of: a first process (trajectory a) of causing the capillary to descend, after a FAB is formed, to a pressure bonding height at a first bonding point so as to form a pressure bonded ball and a column part at the first bonding point; a second process (trajectory b) of moving the capillary horizontally at the pressure bonding height after the execution of the first process to cause the column part to be scraped off by the capillary; and a third process (trajectory c-k) of repeating a pressing operation at least once after the execution of the second process, the pressing operation involving moving the capillary in a forward direction and causing the capillary to descend temporarily during said movement so that the capillary presses down on a wire portion positioned over the pressure bonded ball.
(FR) Dispositif de liaison de fil pourvu d'un capillaire, d'un mécanisme de déplacement qui déplace le capillaire, et d'une unité de commande qui commande l'entraînement du mécanisme de déplacement. L'unité de commande provoque au moins l'exécution : d'un premier processus (trajectoire a) consistant à amener le capillaire à descendre, après qu'un FAB a été formé, à une hauteur de liaison par pression au niveau d'un premier point de liaison de façon à former une bille liée par pression et une partie colonne au niveau du premier point de liaison ; d'un deuxième processus (trajectoire b) consistant à déplacer le capillaire horizontalement à la hauteur de liaison par pression après l'exécution du premier processus pour amener la partie colonne à être raclée par le capillaire ; et d'un troisième processus (trajectoire c-k) consistant à répéter une opération de pressage au moins une fois après l'exécution du deuxième processus, l'opération de pressage impliquant le déplacement du capillaire dans une direction vers l'avant et amenant le capillaire à descendre temporairement pendant ledit déplacement de telle sorte que le capillaire appuie sur une partie de fil positionnée sur la bille liée par pression.
(JA) ワイヤボンディング装置は、キャピラリと、キャピラリを移動させる移動機構と、移動機構の駆動を制御する制御部と、を備え、制御部は、少なくとも、FABが形成された後、キャピラリを第一ボンディング点に圧着高さまで下降させることで、第一ボンディング点に圧着ボールおよび円柱部を形成させる第一処理(軌跡a)と、第一処理の実行後、圧着高さにおいて、キャピラリを水平移動させることで、円柱部をキャピラリで削り取らせる第二処理(軌跡b)と、第二処理の実行後、キャピラリをフォワード方向に移動させるとともに、当該移動の途中で圧着ボールの上に重なるワイヤ部分をキャピラリで踏みつけるべくキャピラリを一時的に下降させる踏み付け動作を1回以上繰り返させる第三処理(軌跡c~k)と、を実行させる。
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