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1. WO2020170514 - 静電チャック装置

公開番号 WO/2020/170514
公開日 27.08.2020
国際出願番号 PCT/JP2019/044090
国際出願日 11.11.2019
IPC
H02N 13/00 2006.01
H電気
02電力の発電,変換,配電
N他類に属しない電機
13静電気の吸引力を用いたクラッチ,把持装置,例.ジョンソン一ラーベック効果を用いたもの
H01L 21/3065 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
18不純物,例.ドーピング材料,を含むまたは含まない周期表第IV族の元素またはA↓I↓I↓IB↓V化合物から成る半導体本体を有する装置
30H01L21/20~H01L21/26に分類されない方法または装置を用いる半導体本体の処理
302表面の物理的性質または形状を変換するため,例.エッチング,ポリシング,切断
306化学的または電気的処理,例.電解エッチング
3065プラズマエッチング;反応性イオンエッチング
H01L 21/683 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
67製造または処理中の半導体または電気的固体装置の取扱いに特に適用される装置;半導体または電気的固体装置もしくは構成部品の製造または処理中のウエハの取扱いに特に適用される装置
683支持または把持のためのもの
CPC
H01L 21/3065
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
H01L 21/67109
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67098Apparatus for thermal treatment
67109mainly by convection
H01L 21/6831
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
6831using electrostatic chucks
H01L 21/6833
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
6831using electrostatic chucks
6833Details of electrostatic chucks
H01L 21/68735
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
687using mechanical means, e.g. chucks, clamps or pinches
68714the wafers being placed on a susceptor, stage or support
68735characterised by edge profile or support profile
H01L 21/6875
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
687using mechanical means, e.g. chucks, clamps or pinches
68714the wafers being placed on a susceptor, stage or support
6875characterised by a plurality of individual support members, e.g. support posts or protrusions
出願人
  • 住友大阪セメント株式会社 SUMITOMO OSAKA CEMENT CO., LTD. [JP]/[JP]
発明者
  • 前田 進一 MAETA Shinichi
代理人
  • 西澤 和純 NISHIZAWA Kazuyoshi
  • 佐藤 彰雄 SATO Akio
  • 萩原 綾夏 HAGIWARA Ayaka
優先権情報
2019-02805420.02.2019JP
2019-02862820.02.2019JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) ELECTROSTATIC CHUCK DEVICE
(FR) DISPOSITIF DE MANDRIN ÉLECTROSTATIQUE
(JA) 静電チャック装置
要約
(EN)
The electrostatic chuck device according to the present invention is such that: a cross-sectional shape of a substrate in the thickness direction forms a convex curved surface or a concave curved surface that gradually curves from the center of one principal surface toward the outer circumference thereof; an annular protrusion is provided that goes round a periphery portion on the one principal surface of the substrate; a plurality of convex protrusions are provided in an area surrounded by the annular protrusion; the difference between the height of the top surface of the convex protrusion positioned at the center of the one principal surface and the height of the upper surface of the annular protrusion is 1 to 30 μm; the convex protrusion has a top surface making contact with a plate-shaped sample, a side surface, and a round chamfered surface connecting the top surface and the side surface, wherein the ratio of the diameter of the top surface to the diameter of the bottom surface is greater than or equal to 0.75; and the convex protrusion has an angle of 90° to 160°, inclusive, between the top surface and the side surface.
(FR)
La présente invention concerne un dispositif de mandrin électrostatique tel que : la forme de la section transversale d'un substrat dans la direction de l'épaisseur forme une surface incurvée convexe ou une surface incurvée concave qui s'incurve progressivement du centre d'une surface principale vers la circonférence externe de celle-ci ; une saillie annulaire entoure une partie périphérique sur ladite surface principale du substrat ; une pluralité de saillies convexes sont disposées dans une zone entourée par la saillie annulaire ; la différence entre la hauteur de la surface supérieure de la saillie convexe positionnée au centre de ladite surface principale et la hauteur de la surface supérieure de la saillie annulaire est comprise entre 1 et 30 µm ; la saillie convexe comporte une surface supérieure en contact avec un échantillon en forme de plaque, une surface latérale, et une surface chanfreinée ronde reliant la surface supérieure et la surface latérale, le rapport du diamètre de la surface supérieure au diamètre de la surface inférieure étant supérieur ou égal à 0,75 ; et la saillie convexe présente un angle de 90° à 160°, bornes incluses, entre la surface supérieure et la surface latérale.
(JA)
本発明の静電チャック装置は、基体の厚さ方向の断面形状が一主面の中心から外周に向かい次第に湾曲する凸状曲面または凹状曲面をなし、基体の一主面上の周縁部を一周する環状突起部が設けられ、環状突起部に囲まれた領域に複数の凸状突起部が設けられ、一主面の中心に位置する凸状突起部の頂面の高さと環状突起部の上面の高さとの差が1~30μmであり、凸状突起部は板状試料と接する頂面、側面および頂面と側面を連接するR面を有し、底面の直径に対する頂面の直径の比が0.75以上であり、凸状突起部は頂面と側面のなす角度が90°以上かつ160°以下である。
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