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1. WO2020110192 - プラズマ処理装置及びそれを用いた試料の処理方法

公開番号 WO/2020/110192
公開日 04.06.2020
国際出願番号 PCT/JP2018/043542
国際出願日 27.11.2018
IPC
H01L 21/26 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
18不純物,例.ドーピング材料,を含むまたは含まない周期表第IV族の元素またはA↓I↓I↓IB↓V化合物から成る半導体本体を有する装置
26波または粒子の輻射線の照射
CPC
H01J 37/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
H01L 21/26
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with radiation
H01L 21/3065
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
H01L 21/311
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3105After-treatment
311Etching the insulating layers ; by chemical or physical means
H01L 21/324
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 21/67
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
出願人
  • 株式会社日立ハイテクノロジーズ HITACHI HIGH-TECHNOLOGIES CORPORATION [JP]/[JP]
発明者
  • 田中 慶一 TANAKA Keiichi
代理人
  • ポレール特許業務法人 POLAIRE I.P.C.
優先権情報
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) PLASMA PROCESSING DEVICE AND SAMPLE PROCESSING METHOD USING SAME
(FR) DISPOSITIF DE TRAITEMENT AU PLASMA ET PROCÉDÉ DE TRAITEMENT D'ÉCHANTILLON L'UTILISANT
(JA) プラズマ処理装置及びそれを用いた試料の処理方法
要約
(EN)
In order to enable a wafer to be heated uniformly and to enable processing throughput to be increased, this sample processing method of processing a sample repeats, a plurality of times, processing steps that include: an adsorption step of forming a layer of a reactant on the surface of a sample placed on a sample stage inside a processing chamber that is connected to a plasma generating chamber, with plasma being generated by a plasma generating means inside the plasma generating chamber into which processing gas has been introduced; a detaching step of heating the sample by a heating lamp disposed outside a sample chamber and a heater installed inside the sample stage to vaporize the layer of the reactant to detach the layer of the reactant from the surface of the sample; and a cooling step of cooling the sample heated in the detaching step, wherein in the adsorption step, the heating lamp and heater are feedforward controlled by a control unit to set the sample to a first temperature state, and in the detaching step, the heating lamp and heater are controlled by the control unit such that when the sample is heated, the heater is feedback controlled to set the sample to a second temperature state.
(FR)
Afin de permettre à une tranche d'être chauffée uniformément et de permettre d'augmenter le débit de traitement, l'invention concerne un procédé de traitement d'échantillon consistant à traiter un échantillon qui répète, une pluralité de fois, des étapes de traitement qui comprennent : une étape d'adsorption consistant à former une couche d'un réactif sur la surface d'un échantillon placé sur un étage d'échantillon à l'intérieur d'une chambre de traitement qui est reliée à une chambre de génération de plasma, le plasma étant généré par un moyen de génération de plasma à l'intérieur de la chambre de génération de plasma dans laquelle le gaz de traitement a été introduit ; une étape de détachement consistant à chauffer l'échantillon par une lampe chauffante disposée à l'extérieur d'une chambre d'échantillon et un dispositif de chauffage installé à l'intérieur de l'étage d'échantillon pour vaporiser la couche du réactif pour détacher la couche du réactif de la surface de l'échantillon ; et une étape de refroidissement consistant à refroidir l'échantillon chauffé dans l'étape de détachement, dans l'étape d'adsorption, la lampe chauffante et le dispositif de chauffage sont commandés par anticipation par une unité de commande pour régler l'échantillon à un premier état de température, et dans l'étape de détachement, la lampe chauffante et le dispositif de chauffage sont commandés par l'unité de commande de telle sorte que, lorsque l'échantillon est chauffé, le dispositif de chauffage est commandé par rétroaction pour régler l'échantillon à un second état de température.
(JA)
ウエハを均一に過熱できるようにして、処理のスループットを上げることを可能にするために、処理ガスを導入したプラズマ発生室内にプラズマ発生手段でプラズマを発生させた状態でプラズマ発生室と接続している処理室の内部の試料台に載置した試料の表面に反応物の層を形成する吸着工程と、試料室の外部に配置した加熱用ランプと試料台の内部に設置したヒータとで試料を加熱して反応物の層を気化させて反応物の層を試料の表面から脱離させる脱離工程と、離脱工程で加熱した試料を冷却する冷却工程とを含む処理工程を複数回繰り返して試料を処理する試料の処理方法において、吸着工程において、加熱用ランプとヒータとを制御部でフィードフォワード制御して試料を第一の温度状態に設定し、脱離工程において、制御部で加熱用ランプとヒータとを制御して試料を加熱するときに、ヒータをフィードバック制御して試料を第二の温度状態に設定するようにした。
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