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1. WO2020039978 - 基準電圧回路、及び、電子機器

公開番号 WO/2020/039978
公開日 27.02.2020
国際出願番号 PCT/JP2019/031619
国際出願日 09.08.2019
IPC
G05F 3/26 2006.1
G物理学
05制御;調整
F電気的変量または磁気的変量の調整システム
3自己調整特性を有する一つの非制御素子,または複数の素子から成る組合せであって自己調整特性を有するものによって,電気的変量を調整する非反作用系
02電流または電圧の調整
08直流のもの
10非線形特性を有する非制御素子を使用するもの
16半導体装置であるもの
20ダイオードトランジスタの組合せを用いるもの
26カレントミラー
CPC
G05F 1/468
GPHYSICS
05CONTROLLING; REGULATING
FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
1Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
10Regulating voltage or current
46wherein the variable actually regulated by the final control device is dc
468characterised by reference voltage circuitry, e.g. soft start, remote shutdown
G05F 1/567
GPHYSICS
05CONTROLLING; REGULATING
FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
1Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
10Regulating voltage or current
46wherein the variable actually regulated by the final control device is dc
56using semiconductor devices in series with the load as final control devices
565sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
567for temperature compensation
G05F 3/20
GPHYSICS
05CONTROLLING; REGULATING
FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
3Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
02Regulating voltage or current
08wherein the variable is dc
10using uncontrolled devices with non-linear characteristics
16being semiconductor devices
20using diode- transistor combinations
G05F 3/245
GPHYSICS
05CONTROLLING; REGULATING
FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
3Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
02Regulating voltage or current
08wherein the variable is dc
10using uncontrolled devices with non-linear characteristics
16being semiconductor devices
20using diode- transistor combinations
24wherein the transistors are of the field-effect type only
242with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
245producing a voltage or current as a predetermined function of the temperature
G05F 3/262
GPHYSICS
05CONTROLLING; REGULATING
FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
3Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
02Regulating voltage or current
08wherein the variable is dc
10using uncontrolled devices with non-linear characteristics
16being semiconductor devices
20using diode- transistor combinations
26Current mirrors
262using field-effect transistors only
G05F 3/267
GPHYSICS
05CONTROLLING; REGULATING
FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
3Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
02Regulating voltage or current
08wherein the variable is dc
10using uncontrolled devices with non-linear characteristics
16being semiconductor devices
20using diode- transistor combinations
26Current mirrors
267using both bipolar and field-effect technology
出願人
  • ソニーセミコンダクタソリューションズ株式会社 SONY SEMICONDUCTOR SOLUTIONS CORPORATION [JP]/[JP]
発明者
  • 渡辺 裕之 WATANABE Hiroyuki
代理人
  • 山本 孝久 YAMAMOTO Takahisa
  • 吉井 正明 YOSHII Masaaki
優先権情報
2018-15715824.08.2018JP
公開言語 (言語コード) 日本語 (ja)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) REFERENCE VOLTAGE CIRCUIT AND ELECTRONIC APPARATUS
(FR) CIRCUIT DE TENSION DE RÉFÉRENCE ET APPAREIL ÉLECTRONIQUE
(JA) 基準電圧回路、及び、電子機器
要約
(EN) A reference voltage circuit (1) comprises: a PTAT voltage generation circuit (20) that generates a voltage having a positive temperature coefficient; a CTAT voltage generation circuit (10) that generates a voltage having a negative temperature coefficient; and a temperature characteristic adjustment circuit (30) that generates a voltage for adjusting temperature characteristics. The reference voltage circuit outputs a reference voltage (VOUT) that is formed by calculation based on an output of the PTAT voltage generation circuit, an output of the CTAT voltage generation circuit, and an output of the temperature characteristic adjustment circuit.
(FR) L’invention concerne un circuit de tension de référence (1) comprenant : un circuit de génération de tension PTAT (20) qui génère une tension ayant un coefficient de température positif ; un circuit de génération de tension CTAT (10) qui génère une tension ayant un coefficient de température négatif ; et un circuit d’ajustement de caractéristiques de température (30) qui génère une tension permettant d’ajuster les caractéristiques de température. Le circuit de tension de référence génère une tension de référence (VOUT) qui est formée par calcul d’après une sortie du circuit de génération de tension PTAT, une sortie du circuit de génération de tension CTAT et une sortie du circuit d’ajustement des caractéristiques de température.
(JA) 基準電圧回路(1)は、温度係数が正の電圧を生成するPTAT電圧生成回路(20)と、温度係数が負の電圧を生成するCTAT電圧生成回路(10)と、温度特性を調整するための電圧を生成する温度特性調整回路(30)とを含んでいる。基準電圧回路は、PTAT電圧生成回路の出力と、CTAT電圧生成回路の出力と、温度特性調整回路の出力とから算出されて成る基準電圧(VOUT)を出力する。
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