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1. WO2020039562 - 基板処理装置、半導体装置の製造方法、及びプログラム

公開番号 WO/2020/039562
公開日 27.02.2020
国際出願番号 PCT/JP2018/031197
国際出願日 23.08.2018
IPC
H01L 21/268 2006.1
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
18不純物,例.ドーピング材料,を含むまたは含まない周期表第IV族の元素またはA↓I↓I↓IB↓V化合物から成る半導体本体を有する装置
26波または粒子の輻射線の照射
263高エネルギーの輻射線を有するもの
268電磁波,例.レーザ光線,を用いるもの
H05B 6/68 2006.1
H電気
05他に分類されない電気技術
B電気加熱;他に分類されない電気照明
6電界,磁界または電磁界による加熱
64マイクロ波を用いた加熱
66回路
68監視または制御のためのもの
H05B 6/76 2006.1
H電気
05他に分類されない電気技術
B電気加熱;他に分類されない電気照明
6電界,磁界または電磁界による加熱
64マイクロ波を用いた加熱
76マイクロ波漏洩防止,例.ドアシール
CPC
H01L 21/268
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with radiation
263with high-energy radiation
268using electromagnetic radiation, e.g. laser radiation
H01L 21/67115
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67098Apparatus for thermal treatment
67115mainly by radiation
H01L 21/67126
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67126Apparatus for sealing, encapsulating, glassing, decapsulating or the like
H01L 21/67248
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67242Apparatus for monitoring, sorting or marking
67248Temperature monitoring
H01L 21/67253
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67242Apparatus for monitoring, sorting or marking
67253Process monitoring, e.g. flow or thickness monitoring
H01L 21/67766
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
677for conveying, e.g. between different workstations
67763the wafers being stored in a carrier, involving loading and unloading
67766Mechanical parts of transfer devices
出願人
  • 株式会社KOKUSAI ELECTRIC KOKUSAI ELECTRIC CORPORATION [JP]/[JP]
発明者
  • 廣地 志有 HIROCHI, Yukitomo
  • 野上 孝志 NOGAMI, Takashi
  • 山岸 紀睦 YAMAGISHI, Norichika
  • 柳沢 愛彦 YANAGISAWA, Yoshihiko
代理人
  • 中島 淳 NAKAJIMA, Jun
  • 加藤 和詳 KATO, Kazuyoshi
  • 福田 浩志 FUKUDA, Koji
優先権情報
公開言語 (言語コード) 日本語 (ja)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SUBSTRATE TREATMENT DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND PROGRAM
(FR) DISPOSITIF DE TRAITEMENT DE SUBSTRAT, PROCÉDÉ DE FABRICATION DE DISPOSITIF SEMI-CONDUCTEUR, ET PROGRAMME
(JA) 基板処理装置、半導体装置の製造方法、及びプログラム
要約
(EN) The present invention is provided with: a treatment casing including a treatment chamber in which a substrate is treated; a conveyance casing that is adjacent to the treatment casing and that includes a conveyance chamber into which the substrate is conveyed; a microwave generator that generates a microwave to be supplied to the treatment chamber; a conveyance inlet/outlet which connects the treatment chamber and the conveyance chamber and into/from which the substrate is conveyed; an opening/closing part that opens/closes the conveyance inlet/outlet; and a detection sensor that is disposed around the conveyance inlet/outlet in the conveyance chamber, and that detects the microwave having leaked from the treatment chamber to the conveyance chamber in the state where the conveyance inlet/outlet is closed by the opening/closing part.
(FR) La présente invention comporte : une enceinte de traitement incluant une chambre de traitement dans laquelle un substrat est traité; une enceinte de transport qui est adjacente à l'enceinte de traitement et qui inclut une chambre de transport dans laquelle le substrat est transporté; un générateur de micro-ondes qui génère une micro-onde à transmettre à la chambre de traitement; une entrée/sortie de transport qui raccorde la chambre de traitement à la chambre de transport et dans/depuis laquelle le substrat est transporté; une partie d'ouverture/de fermeture qui ouvre/ferme l'entrée/la sortie de transport; et un capteur de détection qui est disposé autour de l'entrée/la sortie de transport dans la chambre de transport, et qui détecte que la micro-onde a fui de la chambre de traitement vers la chambre de transport dans l'état dans lequel l'entrée/la sortie de transport est fermée par la partie d'ouverture/de fermeture.
(JA) 基板が処理される処理室を有する処理筐体と、前記処理筐体に隣接され前記基板が搬送される搬送室を有する搬送筐体と、前記処理室に供給されるマイクロ波を発信するマイクロ波発生器と、前記処理室と前記搬送室とを連通し前記基板を搬入搬出する搬入搬出口と、前記搬入搬出口を開閉する開閉部と、前記搬送室内で前記搬入搬出口の周囲に配置され、前記開閉部が前記搬入搬出口を閉塞した状態で前記処理室から前記搬送室に漏洩する前記マイクロ波を検出する検出センサとを備える。
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