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1. (WO2019067444) SYSTEMS AND METHODS FOR TREATING SUBSTRATES WITH CRYOGENIC FLUID MIXTURES
注意: このテキストは、OCR 処理によってテキスト化されたものです。法的な用途には PDF 版をご利用ください。

CLAIMS:

What is claimed is:

1 . A method for treating a microelectronic substrate, comprising

receiving the microelectronic substrate in a vacuum process chamber comprising a fluid expansion component an inlet and an outlet;

maintaining a process pressure of 35 Torr or less in the vacuum process chamber;

receiving a fluid mixture to the fluid expansion component, the fluid mixture comprising nitrogen or argon, wherein the fluid mixture is at a temperature in the range from 70 K to 200 K and a pressure less than 800 psig;

maintaining the fluid mixture to the fluid expansion component and the vacuum process chamber under a first group of process conditions;

expanding the fluid mixture into the vacuum process chamber through the outlet such that the expanded fluid mixture flows across the microelectronic substrate;

removing a first plurality of objects from the microelectronic substrate using the fluid mixture that flows across the microelectronic substrate;

maintaining the fluid mixture to the fluid expansion component and the vacuum process chamber under a second group of process conditions where at least one process condition between the first group and the second group of process conditions are different;

expanding the fluid mixture into the vacuum process chamber through the outlet such that the expanded fluid mixture flows across the microelectronic substrate; and

removing a second plurality of objects from the microelectronic substrate using the fluid mixture that flows across the microelectronic substrate.

2. The method of claim 1 , wherein the first group of process conditions comprises a first fluid flow rate, and the second group of process conditions comprises a second fluid flow rate being different from the first fluid flow rate.

3. The method of claim 1 , wherein the first group of process conditions comprises a first fluid flow rate, and the second group of process conditions comprises a second fluid flow rate being higher than the first fluid flow rate.

4. The method of claim 1 , wherein the first group of process conditions comprises a first fluid flow rate, and the second group of process conditions comprises a second fluid flow rate being lower than the first fluid flow rate.

5. The method of claim 1 , wherein the first group of process conditions comprises a first fluid flow rate of about l OOslm, and the second group of process conditions comprises a second fluid flow rate of about 160slm.

6. The method of claim 1 , wherein the first group of process conditions or the second group of process conditions comprises fluid flow rate of the fluid mixture, a chemical composition of the fluid mixture, a temperature of the fluid mixture, a fluid pressure of the fluid mixture, a distance between the microelectronic substrate and the fluid expansion component, or a chamber pressure of the vacuum process chamber.

7. The method of claim 1 , wherein the fluid mixture comprises nitrogen, argon, or a combination thereof.

8. The method of claim 1 , wherein the fluid mixture comprises at least a mixture of nitrogen or argon to one or more of the following: xenon, krypton, helium, hydrogen, C2H6 or carbon dioxide.

9. A method for cleaning a microelectronic substrate, comprising

receiving the microelectronic substrate in a vacuum process chamber comprising a gas expansion component comprising an inlet and an outlet;

supplying, to the gas expansion component, a gas mixture comprising:

a temperature that is less than 273K;

a pressure that prevents liquid formation in the gas mixture in the gas expansion component; and

maintaining a first group of process conditions for the gas mixture and the vacuum process chamber;

positioning the substrate opposite the gas expansion component to provide a gap distance between the substrate and the outlet in the range from 2 mm to 50 mm, the gas expansion component being disposed opposite of the microelectronic substrate;

expanding the gas mixture into the process chamber through the gas expansion component outlet and through the gap such that at least a portion of the expanded gas mixture will flow across the microelectronic substrate;

moving the microelectronic substrate along a path that is adjacent to the gas expansion component for an initial treatment of the microelectronic substrate;

changing at least one process condition for the gas mixture or the vacuum process chamber for a subsequent treatment following the initial treatment of the microelectronic substrate.

10. The method of claim 9, wherein the temperature is greater than or equal to 70K and less than or equal to 150K.

1 1 . The method of claim 9, wherein the process chamber is maintained at less than 10Torr.

12. The method of claim 9, wherein the positioning of the substrate comprises maintaining an incidence angle of 45°to 90° between the substrate and the gas expansion component.

13. The method of claim 9, wherein the cooled and pressurized gas mixture comprises nitrogen, argon, or a combination thereof.

14. The method of claim 9, wherein the cooled and pressurized gas mixture comprises at least a mixture of nitrogen or argon to one or more of the following: xenon, krypton, helium, hydrogen, C2H6 or carbon dioxide.

15. The method of claim 9, wherein the changing of the process conditions comprises changing at least one process condition from an initial treatment of the microelectronic substrate for a subsequent treatment of the microelectronic substrate.

16. The method of claim 9, wherein the changing of the process conditions comprises changing the gas flow rate to a higher magnitude for a subsequent treatment of the microelectronic substrate.

17. The method of claim 9, wherein the changing of the process conditions comprises changing the gap distance for a subsequent treatment of the microelectronic substrate.

18. The method of claim 9, wherein the changing of the process conditions comprises changing at least two of the following process conditions: a gas flow rate of the gas mixture, a chemical composition of the gas mixture, a temperature of the gas mixture, a gas pressure of the gas mixture, a distance between the microelectronic substrate and the gas expansion component, a chamber pressure of the vacuum process chamber, or any combination thereof.

19. A method for treating a microelectronic substrate, comprising the steps of:

receiving the microelectronic substrate in a vacuum process chamber, wherein the vacuum process chamber comprises a fluid expansion

component comprising an inlet and an outlet, wherein the process chamber is at a pressure of 35 Torr or less, wherein the microelectronic substrate is positioned to provide a gap distance between the substrate and the outlet of the fluid expansion component in the range from 2 mm to 50 mm;

using a first treatment occurring under a first group of process conditions that expands a pressurized and cooled fluid into the process chamber under conditions effective to remove particles from the

microelectronic substrate; and

using a second treatment occurring under a second group of process conditions that expands a pressurized and cooled fluid into the process chamber under conditions effective to remove particles from the

microelectronic substrate.