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1. WO2019059066 - 半導体光集積素子

公開番号 WO/2019/059066
公開日 28.03.2019
国際出願番号 PCT/JP2018/033845
国際出願日 12.09.2018
IPC
H01S 5/0683 2006.1
H電気
01基本的電気素子
S光を増幅または生成するために,放射の誘導放出による光増幅を用いた装置;光領域以外の電磁放射の誘導放出を用いた装置
5半導体レーザ
06レーザ出力パラメータの制御,例.活性媒質を制御することによるもの
068レーザ出力パラメータの安定化
0683光学的な出力パラメータをモニタすることによるもの
CPC
H01S 5/0264
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
0262Photo-diodes, e.g. transceiver devices, bidirectional devices
0264for monitoring the laser-output
H01S 5/0265
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
0265Intensity modulators
H01S 5/06251
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
062by varying the potential of the electrodes
0625in multi-section lasers
06251Amplitude modulation
H01S 5/06258
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
062by varying the potential of the electrodes
0625in multi-section lasers
06255Controlling the frequency of the radiation
06258with DFB-structure
H01S 5/06821
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
068Stabilisation of laser output parameters
06821Stabilising other output parameters than intensity or frequency, e.g. phase, polarisation or far-fields
H01S 5/0683
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
068Stabilisation of laser output parameters
0683by monitoring the optical output parameters
出願人
  • 日本電信電話株式会社 NIPPON TELEGRAPH AND TELEPHONE CORPORATION [JP]/[JP]
発明者
  • 進藤 隆彦 SHINDO Takahiko
  • 小林 亘 KOBAYASHI Wataru
  • 藤原 直樹 FUJIWARA Naoki
  • 金澤 慈 KANAZAWA Shigeru
代理人
  • 特許業務法人 谷・阿部特許事務所 TANI & ABE, P.C.
優先権情報
2017-17953519.09.2017JP
公開言語 (言語コード) 日本語 (ja)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SEMICONDUCTOR OPTICAL INTEGRATED ELEMENT
(FR) ÉLÉMENT INTÉGRÉ OPTIQUE À SEMI-CONDUCTEUR
(JA) 半導体光集積素子
要約
(EN) The present invention maintains, at a constant level, the output light intensity of a semiconductor optical integrated element on which a DFB laser, an EA modulation unit, and an SOA are monolithically integrated. The semiconductor optical integrated element comprises: a DFB laser; an EA modulator connected to the DFB laser; an SOA that is monolithically integrated on the same substrate as the DFB laser and the EA modulator and that is connected to the emission end of the EA modulator; and a light receiver that is disposed on the emission end side of the SOA and that has the same composition as the SOA. The light receiver is given a forward bias voltage or a forward bias current, and the light receiver is configured to monitor changes in detected values corresponding to the intensity of light input to the receiver so that the drive current to the DFB laser and SOA is feedback-controlled.
(FR) La présente invention maintient, à un niveau constant, l'intensité de lumière de sortie d'un élément intégré optique à semi-conducteur sur lequel un laser DFB, une unité de modulation EA et un SOA sont intégrés de manière monolithique. L'élément intégré optique à semi-conducteur comprend : un laser DFB ; un modulateur EA connecté au laser DFB ; un SOA qui est intégré de façon monolithique sur le même substrat que le laser DFB et le modulateur EA et qui est connecté à l'extrémité d'émission du modulateur EA ; et un récepteur de lumière qui est disposé sur le côté d'extrémité d'émission du SOA et qui a la même composition que le SOA. Le récepteur de lumière reçoit une tension de polarisation directe ou un courant de polarisation directe, et le récepteur de lumière est configuré pour surveiller des changements dans des valeurs détectées correspondant à l'intensité de l'entrée de lumière vers le récepteur de telle sorte que le courant d'attaque vers le laser DFB et le SOA sont commandés par rétroaction.
(JA) DFBレーザとEA変調部とSOAとをモノリシック集積した半導体光集積素子の出力光強度を一定に保つ。半導体光集積素子は、DFBレーザと、DFBレーザに接続されたEA変調器と、DFBレーザおよびEA変調器と同一基板上にモノリシック集積され、EA変調器の出射端に接続されたSOAと、SOAの出射端側に配置され、SOAと同一の組成を有する受光器とを備え、受光器には、順バイアス電圧または順バイアス電流が与えられ、受光器は、DFBレーザおよびSOAへの駆動電流がフィードバック制御されるよう、当該受光器への入力光強度に応じた検出値の変化をモニタするように構成される。
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