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1. WO2019044530 - 薄型化板状部材の製造方法、及び製造装置

公開番号 WO/2019/044530
公開日 07.03.2019
国際出願番号 PCT/JP2018/030458
国際出願日 17.08.2018
IPC
H01L 21/304 2006.1
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
18不純物,例.ドーピング材料,を含むまたは含まない周期表第IV族の元素またはA↓I↓I↓IB↓V化合物から成る半導体本体を有する装置
30H01L21/20~H01L21/26に分類されない方法または装置を用いる半導体本体の処理
302表面の物理的性質または形状を変換するため,例.エッチング,ポリシング,切断
304機械的処理,例.研摩,ポリシング,切断
B23K 26/53 2014.1
B処理操作;運輸
23工作機械;他に分類されない金属加工
Kハンダ付またはハンダ離脱;溶接;ハンダ付または溶接によるクラッドまたは被せ金;局部加熱による切断,例.火炎切断:レーザービームによる加工
26レーザービームによる加工,例.溶接,切断または穴あけ
50レーザービームに対して透明である加工物の加工
53加工物の内部に改質または変質部を形成するためのもの,例.破断の起点となる亀裂の形成
H01L 21/683 2006.1
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
67製造または処理中の半導体または電気的固体装置の取扱いに特に適用される装置;半導体または電気的固体装置もしくは構成部品の製造または処理中のウエハの取扱いに特に適用される装置
683支持または把持のためのもの
CPC
B23K 26/53
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26Working by laser beam, e.g. welding, cutting or boring
50Working by transmitting the laser beam through or within the workpiece
53for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
H01L 21/304
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/67092
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67092Apparatus for mechanical treatment
H01L 21/67115
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67098Apparatus for thermal treatment
67115mainly by radiation
H01L 21/683
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
H01L 21/6836
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
6835using temporarily an auxiliary support
6836Wafer tapes, e.g. grinding or dicing support tapes
出願人
  • リンテック株式会社 LINTEC CORPORATION [JP]/[JP]
発明者
  • 泉 直史 IZUMI Naofumi
  • 山下 茂之 YAMASHITA Shigeyuki
代理人
  • 特許業務法人樹之下知的財産事務所 KINOSHITA & ASSOCIATES
優先権情報
2017-16977604.09.2017JP
公開言語 (言語コード) 日本語 (ja)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) THINNED PLATE MEMBER PRODUCTION METHOD AND PRODUCTION DEVICE
(FR) PROCÉDÉ DE PRODUCTION ET DISPOSITIF DE PRODUCTION D'ÉLÉMENT DE PLAQUE AMINCIE
(JA) 薄型化板状部材の製造方法、及び製造装置
要約
(EN) This thinned plate member production method comprises: a step for attaching a first adhesion surface (AT11) of a first double-sided adhesive sheet (AT1) to a support surface (111) of a first hard support body (110), and attaching a second adhesion surface (AT12) to the entire first surface (WF1) of a plate member (WF); a step for forming a boundary layer (CR) inside the plate member (WF); a step for attachably/detachably fixing a first holding means (130) and the first hard support body (110) so as to locate the first holding means (130) on the opposite side of the plate member (WF) with the first hard support body (110) interposed therebetween; a step for holding the plate member (WF) from a second surface (WF2) side by means of a second holding means (160); and a step of relatively moving the first holding means (130) and the second holding means (160) so as to divide, at the boundary layer (CR) as a boundary, the plate member (WF) into a first thinned plate member having the first surface (WF1) and a second thinned plate member having the second surface (WF2).
(FR) Cette invention concerne un procédé de production d'élément de plaque amincie, comprenant : une étape consistant à fixer une première surface d'adhérence (AT11) d'une première feuille adhésive double face (AT1) à une surface de support (111) d'un premier corps de support dur (110), et à fixer une seconde surface d'adhérence (AT12) à la totalité de la première surface (WF1) d'un élément de plaque (WF) ; une étape consistant à former une couche limite (CR) à l'intérieur de l'élément de plaque (WF) ; une étape consistant à fixer de manière fixe/amovible de premiers moyens de retenue (130) et le premier corps de support dur (110) de façon à positionner les premiers moyens de retenue (130) sur le côté opposé de l'élément de plaque (WF) avec le premier corps de support dur (110) interposé entre ceux-ci ; une consistant à retenir l'élément de plaque (WF) à partir d'un côté de seconde surface (WF2) au moyen de seconds moyens de retenue (160) ; et une étape consistant à déplacer relativement les premiers moyens de retenue (130) et les seconds moyens de retenue (160) de façon à séparer, au niveau de la couche limite (CR) en tant que limite, l'élément de plaque (WF) en un premier élément de plaque amincie ayant la première surface (WF1) et un second élément de plaque amincie ayant la seconde surface (WF2).
(JA) 薄型化板状部材の製造方法は、第1硬質支持体(110)の支持面(111)に第1両面接着シート(AT1)の第1接着面(AT11)を貼付し、板状部材(WF)の第1表面(WF1)全体に第2接着面(AT12)を貼付する工程と、前記板状部材(WF)の内部に境界層(CR)を形成する工程と、第1硬質支持体(110)を挟んで前記板状部材(WF)の反対側に第1保持手段(130)が位置するように、前記第1保持手段(130)と第1硬質支持体(110)とを着脱自在に固定する工程と、第2保持手段(160)で前記板状部材(WF)を第2表面(WF2)側から保持する工程と、前記境界層(CR)を境にして、前記板状部材(WF)を、第1表面(WF1)を有する第1薄型化板状部材、及び第2表面(WF2)を有する第2薄型化板状部材に分割するように、前記第1保持手段(130)と前記第2保持手段(160)とを相対移動させる工程とを備えている。
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