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1. WO2019044246 - 固体撮像装置

公開番号 WO/2019/044246
公開日 07.03.2019
国際出願番号 PCT/JP2018/027111
国際出願日 19.07.2018
IPC
H01L 27/148 2006.1
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
271つの共通基板内または上に形成された複数の半導体構成部品または他の固体構成部品からなる装置
14赤外線,可視光,短波長の電磁波または粒子線輻射に感応する半導体構成部品で,これらの輻射線エネルギーを電気的エネルギーに変換するかこれらの輻射線によって電気的エネルギーを制御するかのどちらかに特に適用されるもの
144輻射線によって制御される装置
146固体撮像装置構造
148電荷結合型固体撮像装置
H04N 5/372 2011.1
H電気
04電気通信技術
N画像通信,例.テレビジョン
5テレビジョン方式の細部
30光または類似信号から電気信号への変換
335固体撮像素子を用いるもの
369固体撮像素子の構造,固体撮像素子と関連する回路に特徴のあるもの
372電荷結合素子センサ,特に固体撮像素子に適応したシフトレジスタもしくは時間遅延積分レジスタ
CPC
H01L 27/14605
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14603Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
14605Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
H01L 27/14607
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14603Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
14607Geometry of the photosensitive area
H01L 27/14812
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
148Charge coupled imagers
14806Structural or functional details thereof
14812Special geometry or disposition of pixel-elements, address lines or gate-electrodes
H01L 27/14843
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
148Charge coupled imagers
14831Area CCD imagers
14843Interline transfer
H04N 5/372
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
369SSIS architecture; Circuitry associated therewith
372Charge-coupled device [CCD] sensors; Time delay and integration [TDI] registers or shift registers specially adapted for SSIS
H04N 5/3728
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
369SSIS architecture; Circuitry associated therewith
372Charge-coupled device [CCD] sensors; Time delay and integration [TDI] registers or shift registers specially adapted for SSIS
3728using interline transfer [IT]
出願人
  • 浜松ホトニクス株式会社 HAMAMATSU PHOTONICS K.K. [JP]/[JP]
発明者
  • ▲高▼木 慎一郎 TAKAGI Shin-ichiro
  • 間瀬 光人 MASE Mitsuhito
  • 平光 純 HIRAMITSU Jun
  • 米田 康人 YONETA Yasuhito
  • 村松 雅治 MURAMATSU Masaharu
代理人
  • 長谷川 芳樹 HASEGAWA Yoshiki
  • 黒木 義樹 KUROKI Yoshiki
  • 柴山 健一 SHIBAYAMA Kenichi
優先権情報
2017-16946604.09.2017JP
公開言語 (言語コード) 日本語 (ja)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SOLID STATE IMAGING DEVICE
(FR) DISPOSITIF D'IMAGERIE À SEMI-CONDUCTEUR
(JA) 固体撮像装置
要約
(EN) A photosensitive region includes: a first impurities region; and a second impurities region having a higher impurities concentration than the first impurities region. The photosensitive region has: one end positioned away from a transfer unit, in a second direction; and another end positioned closer to the transfer unit in the second direction. The shape of the second impurities region in the planar view is linearly symmetrical to a center line of the photosensitive region along the second direction. The width of the second impurities region in a first direction increases in the transfer direction from the one end towards the other end. The rate of increase in the width of the second impurities region, in each segment obtained by dividing the photosensitive region into n segments in the second direction, gradually increases in the transfer direction. n is an integer of at least 2.
(FR) La présente invention concerne une région photosensible comprenant : une première région d'impuretés ; et une seconde région d'impuretés ayant une concentration d'impuretés plus élevée que la première région d'impuretés. La région photosensible a : une extrémité positionnée à l'opposé d'une unité de transfert, dans une seconde direction ; et une autre extrémité positionnée plus près de l'unité de transfert dans la seconde direction. La forme de la seconde région d'impuretés dans la vue plane est linéairement symétrique par rapport à une ligne centrale de la région photosensible le long de la seconde direction. La largeur de la seconde région d'impuretés dans une première direction augmente dans la direction de transfert depuis l'extrémité vers l'autre extrémité. La vitesse d'augmentation de la largeur de la seconde région d'impuretés, dans chaque segment obtenu en divisant la région photosensible en n segments dans la seconde direction, augmente progressivement dans la direction de transfert, n étant un nombre entier supérieur ou égal à 2.
(JA) 光感応領域は、第一不純物領域と、第一不純物領域に比して不純物濃度が高い第二不純物領域と、を含んでいる。光感応領域は、第二方向で転送部から離れて位置している一端と、第二方向で転送部寄りに位置している他端と、を有している。第二不純物領域の平面視での形状は、第二方向に沿った光感応領域の中心線に対して線対称である。第二不純物領域の第一方向での幅は、一端から他端に向かう転送方向で増加している。光感応領域を第二方向にn分割した各区間における第二不純物領域の幅の増加率は、転送方向で次第に大きくなっている。nは、2以上の整数である。
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