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1. (WO2019042036) THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF



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INTERNATIONAL SEARCH REPORT (ISR)
Part 1:  1  2  3  4  5  6          Part 2:  A  B  C  D  E 
International application No. Applicant's or agent's file reference
PCT/CN2018/096103 P2018TC537
International filing date (day/month/year) (Earliest) Priority Date (day/month/year)
18 July 2018 31 August 2017
Applicant
Yangtze Memory Technologies Co., Ltd.
FOR FURTHER ACTION: See Form PCT/ISA/220 as well as, where applicable, item 5 below.
This international search report has been prepared by this International Searching Authority and is transmitted to the applicant according to Article 18. A copy is being transmitted to the International Bureau.
It is also accompanied by a copy of each prior art document cited in this report.
1. Basis of the report
a. With regard to the language, the international search was carried out on the basis of:
the international application in the language in which it was filed.
a translation of the international application into                                          which is the language of a translation furnished for the purposes of international search (Rules 12.3(a) and 23.1(b)).
b.
This international search report has been established taking into account the rectification of an obvious mistake authorized by or notified to this Authority under Rule 91 (Rule 43.6bis(a)).
c.
With regard to any nucleotide and/or amino acid sequence disclosed in the international application, the international search was carried out on the basis of a sequence listing:
2. Certain claims were found unsearchable
3. Unity of invention is lacking
4. Title of the invention
The text is approved as submitted by the applicant.
The text has been established by this Authority to read as follows:
5. Abstract
The text is approved as submitted by the applicant.
The text has been established, according to Rule 38.2, by this Authority as it appears in Box No. IV. The applicant may, within one month from the date of mailing of this international search report, submit comments to this Authority.

A method for forming a 3D memory device is disclosed. The method includes: forming an first insulating layer (114) on a substrate (100) in a peripheral region (110), the first insulating layer (114) having a slope near a boundary between the peripheral region (110) and a core region (120) of the substrate (100); forming an alternating conductive/dielectric stack (250) on the substrate (100) and the slope of the first insulating layer (114), a lateral portion of the alternating conductive/dielectric stack (250) extending along a top surface of the substrate (100) in the core region (120), and an inclined portion of the alternating conductive/dielectric stack (250) extending along the slope of the first insulating layer (114); and forming a plurality of contacts (310) to electrically contact a plurality of conductive layers in the inclined portion of the alternating conductive/dielectric stack (250).


6. Drawings
a.
The figure of the drawings to be published with the abstract is Figure No.     4H    
as suggested by the applicant.
as selected by this Authority, because the applicant failed to suggest a figure.
as selected by this Authority, because this figure better characterizes the invention.
b.
none of the figures is to be published with the abstract.

A. CLASSIFICATION OF SUBJECT MATTER

According to International Patent Classification (IPC) or to both national classification and IPC

B. FIELDS SEARCHED

Minimum documentation searched (classification system followed by classification symbols):
     H01L
Documentation searched other than minimum documentation to the extent that such documents are included in the fields searched:
Electronic data base consulted during the international search (name of data base and, where practicable, search terms used):
CNPAT,WPI,EPODOC,GOOGLE:memory,stop,same,cmp,metal,stack,staircase,line?,gate,layer?,planar+,vertical+,like,dimension?,plane,leakage,three,contact?,slope,incline,degree,angle

C. DOCUMENTS CONSIDERED TO BE RELEVANT

Category* Citation of document, with indication, where appropriate, of the relevant passages Relevant to claim No.
(1)
PX
CN 107482012 A (YANGTZE MEMORY TECHNOLOGIES CO., LTD.) 15 December 2017 (2017-12-15)
1-20
paragraphs [0047]-[0083]
(2)
X
US 2011018051 A1 (KIM, JI-YOUNG ET AL.) 27 January 2011 (2011-01-27)
1-20
paragraphs [0033]-[0042], figures 1A-1I
(3)
A
US 2012135583 A1 (JANG, BYONG-HYUN ET AL.) 31 May 2012 (2012-05-31)
1-20
the whole document
(4)
A
CN 105448840 A (SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORPORATION SHANGHAI) 30 March 2016 (2016-03-30)
1-20
the whole document
(5)
X
Jiyoung KIM et al., "A stacked memory device on logic 3D technology for ultra-high-density data storage", Nanotechnology,Vol. 22, 24 June 2011 (2011-06-24),
1-20
pages 2-4, figures 2-3
*
Special categories of cited documents:
"A"
document defining the general state of the art which is not considered to be of particular relevance
"E"
earlier application or patent but published on or after the international filing date
"L"
document which may throw doubts on priority claim(s) or which is cited to establish the publication date of another citation or other special reason (as specified)
"O"
document referring to an oral disclosure, use, exhibition or other means
"P"
document published prior to the international filing date but later than the priority date claimed
"T"
later document published after the international filing date or priority date and not in conflict with the application but cited to understand the principle or theory underlying the invention
"X"
document of particular relevance; the claimed invention cannot be considered novel or cannot be considered to involve an inventive step when the document is taken alone
"Y"
document of particular relevance; the claimed invention cannot be considered to involve an inventive step when the document is combined with one or more other such documents, such combination being obvious to a person skilled in the art
"&"
document member of the same patent family

D. INFORMATION ON PATENT FAMILY MEMBERS

Patent document cited in search report Publication date
(day/month/year)
Patent family member(s) Publication date
(day/month/year)
CN 107482012 A
15 December 2017
None
US 2011018051 A1
27 January 2011
US 2014015032 A1
JP 2011029586 A
KR 20110010045 A
TW 201104839 A
16 January 2014
10 February 2011
31 January 2011
01 February 2011
US 2012135583 A1
31 May 2012
KR 20120058222 A
07 June 2012
CN 105448840 A
30 March 2016
None
Name and mailing address of the ISA/:
STATE INTELLECTUAL PROPERTY OFFICE OF THE P.R.CHINA
6, Xitucheng Rd., Jimen Bridge, Haidian District, Beijing 100088
China
Facsimile No. (86-10)62019451
Date of the actual completion of the international search:
24 September 2018
Date of mailing of the international search report:
17 October 2018
Authorized officer:
LIN,Fang
Telephone No. 86-(10)-53961337
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