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1. (WO2019032251) SEMICONDUCTOR MOLD COMPOUND TRANSFER SYSTEM AND ASSOCIATED METHODS
注意: このテキストは、OCR 処理によってテキスト化されたものです。法的な用途には PDF 版をご利用ください。

CLAIMS

I/We claim:

1. A mold compound transfer system, comprising:

a tray cover defining a containment area;

a sheet mold compound spanning at least substantially across the containment area defined by the tray cover;

a granular mold compound comprising a plurality of individual grains carried by the sheet mold compound and spanning at least across a majority of the sheet mold compound.

2. The system of claim 1 wherein a ratio by weight of the sheet mold compound to the granular mold compound is between about 3 : 1 and about 5 : 1.

3. The system of claim 1 wherein a ratio by weight of the sheet mold compound to the granular mold compound is about 4: 1.

4. The system of claim 1 wherein the sheet mold compound and the individual grains have the same chemical composition.

5. The system of claim 1 wherein the sheet mold compound and the individual grains each include a resin material.

6. The system of claim 1 wherein the transfer system lacks a release film.

7. The system of claim 1 wherein the sheet mold compound has a first thickness and the granular mold compound has a second thickness less than the first thickness.

8. The system of claim 1 wherein the combined thickness of the sheet mold compound and the granular mold compound is greater than or equal to 5 millimeters.

9. A method of transferring a mold compound without using a release film, the method comprising:

placing a solid sheet having a first weight in a containment area, wherein the solid sheet comprises a first mold material;

dispensing grains over the solid sheet such that the solid sheet carries the grains, wherein the grains have a second weight less than the first weight, and wherein the grains comprise a second mold material; and

transferring the solid sheet carrying the dispensed grains to a molding machine.

10. The method of claim 9 wherein transferring includes transferring the solid sheet carrying the dispensed grains without using a release film.

11. The method of claim 9 wherein the first mold material and the second mold material each include a flowable resin.

12. The method of claim 9 wherein the first mold material and the second mold material have the same chemical composition.

13. The method of claim 9 wherein the first weight is approximately three to five times greater than the second weight.

14. The method of claim 9 wherein the solid sheet has a first thickness and the dispensed grains have a second thickness less than or equal to the first thickness.

15. The method of claim 14 wherein the combined first and second thicknesses are about 5 millimeters or greater.

16. The method of claim 9 wherein transferring includes placing the solid sheet carrying the dispensed grains in the molding machine, the method further comprising reflowing the solid sheet and dispensed grains to form a uniform mold material over the wafer.

17. A method of forming a molded semiconductor wafer, the method comprising:

placing a solid sheet of first mold compound in a containment area;

placing grains of second mold compound over the solid sheet such that the grains are carried by the solid sheet; and

pressing the grains of the second mold compound in a molding machine to form a hybrid mold compound including the solid sheet of first mold compound and a pressed layer of the second mold compound.

18. The method of claim 17 wherein the hybrid mold compound defines an encapsulant over one or more dies.

19. The method of claim 17, further comprising based at least in part on a first weight of the first mold compound, determining a second weight of the second mold compound to be placed over the first mold compound.

20. The method of claim 17, further comprising before pressing the grains, transferring the solid sheet to the molding machine without using a release film.

21. The method of claim 17 wherein the solid sheet of first mold compound has a first density and the granular mold compound has a second density less than the first density.