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1. WO2018216476 - 基板処理装置および基板処理方法

公開番号 WO/2018/216476
公開日 29.11.2018
国際出願番号 PCT/JP2018/018038
国際出願日 10.05.2018
IPC
H01L 21/304 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
18不純物,例.ドーピング材料,を含むまたは含まない周期表第IV族の元素またはA↓I↓I↓IB↓V化合物から成る半導体本体を有する装置
30H01L21/20~H01L21/26に分類されない方法または装置を用いる半導体本体の処理
302表面の物理的性質または形状を変換するため,例.エッチング,ポリシング,切断
304機械的処理,例.研摩,ポリシング,切断
H01L 21/66 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
66製造または処理中の試験または測定
CPC
H01L 21/02057
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02041Cleaning
02057Cleaning during device manufacture
H01L 21/02101
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02041Cleaning
02101only involving supercritical fluids
H01L 21/67028
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
67028for cleaning followed by drying, rinsing, stripping, blasting or the like
H01L 21/67034
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
67028for cleaning followed by drying, rinsing, stripping, blasting or the like
67034for drying
H01L 21/67051
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
67028for cleaning followed by drying, rinsing, stripping, blasting or the like
6704for wet cleaning or washing
67051using mainly spraying means, e.g. nozzles
H01L 21/67173
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67155Apparatus for manufacturing or treating in a plurality of work-stations
67161characterized by the layout of the process chambers
67173in-line arrangement
出願人
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP]/[JP]
発明者
  • 清瀬 浩巳 KIYOSE, Hiromi
代理人
  • 特許業務法人酒井国際特許事務所 SAKAI INTERNATIONAL PATENT OFFICE
優先権情報
2017-10245524.05.2017JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SUBSTRATE TREATMENT DEVICE AND SUBSTRATE TREATMENT METHOD
(FR) DISPOSITIF DE TRAITEMENT DE SUBSTRAT ET PROCÉDÉ DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理装置および基板処理方法
要約
(EN)
The substrate treatment device according to an embodiment of the present invention is provided with a liquid treatment unit, an image pickup unit (41), a determination unit (19b), and a post-treatment unit. The liquid treatment unit supplies a liquid to form a liquid film on a substrate. The image pickup unit (41) captures an image of a surface of the substrate having the liquid film formed thereon. The determination unit (19b) determines, on the basis of the captured image of the substrate, whether the formation condition of the liquid film is good or bad. When it is determined that the formation condition of the liquid film is good, the post-treatment unit treats the substrate having the liquid film formed thereon.
(FR)
Le dispositif de traitement de substrat selon un mode de réalisation de la présente invention est pourvu d’une unité de traitement de liquide, d’une unité de capture d’image (41), d’une unité de détermination (19b) et d’une unité de post-traitement. L’unité de traitement de liquide distribue un liquide pour former un film liquide sur un substrat. L’unité de capture d’image (41) capture une image d’une surface du substrat sur laquelle le film liquide est formé. L’unité de détermination (19b) détermine, sur la base de l’image capturée du substrat, si l’état de formation du film liquide est bon ou mauvais. Lorsqu’il est déterminé que l’état de formation du film liquide est bon, l’unité de post-traitement traite le substrat sur lequel le film liquide est formé.
(JA)
実施形態に係る基板処理装置は、液処理部と、撮像部(41)と、判定部(19b)と、後処理部とを備える。液処理部は、基板に液体を供給し、基板に液膜を形成する。撮像部(41)は、液膜が形成された基板の表面を撮像する。判定部(19b)は、撮像された基板の画像に基づいて、液膜の形成状態の良否を判定する。後処理部は、液膜の形成状態が良好であると判定された場合に、液膜が形成された基板を処理する。
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