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1. WO2018207656 - パワーモジュール、電力変換装置、およびパワーモジュールの製造方法

公開番号 WO/2018/207656
公開日 15.11.2018
国際出願番号 PCT/JP2018/017134
国際出願日 27.04.2018
IPC
H01L 25/07 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
25複数の個々の半導体または他の固体装置からなる組立体
03すべての装置がグループH01L27/00~H01L51/00の同じサブグループに分類される型からなるもの,例.整流ダイオードの組立体
04個別の容器を持たない装置
07装置がグループH01L29/00に分類された型からなるもの
H01L 23/28 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
23半導体または他の固体装置の細部
28封緘,例.封緘層,被覆
H01L 23/48 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
23半導体または他の固体装置の細部
48動作中の固体本体からまたは固体本体へ電流を導く装置,例.リードまたは端子装置
H01L 25/18 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
25複数の個々の半導体または他の固体装置からなる組立体
18装置がグループH01L27/00~H01L51/00の同じメイングループの2つ以上の異なるサブグループに分類される型からなるもの
CPC
H01L 21/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, ; e.g. sealing of a cap to a base of a container
56Encapsulations, e.g. encapsulation layers, coatings
H01L 2224/0603
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas; Manufacturing methods related thereto
04Structure, shape, material or disposition of the bonding areas prior to the connecting process
06of a plurality of bonding areas
0601Structure
0603Bonding areas having different sizes, e.g. different heights or widths
H01L 2224/291
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
28Structure, shape, material or disposition of the layer connectors prior to the connecting process
29of an individual layer connector
29001Core members of the layer connector
29099Material
291with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
H01L 2224/32225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
31Structure, shape, material or disposition of the layer connectors after the connecting process
32of an individual layer connector
321Disposition
32151the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
32221the body and the item being stacked
32225the item being non-metallic, e.g. insulating substrate with or without metallisation
H01L 2224/32227
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
31Structure, shape, material or disposition of the layer connectors after the connecting process
32of an individual layer connector
321Disposition
32151the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
32221the body and the item being stacked
32225the item being non-metallic, e.g. insulating substrate with or without metallisation
32227the layer connector connecting to a bond pad of the item
H01L 2224/37011
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
36Structure, shape, material or disposition of the strap connectors prior to the connecting process
37of an individual strap connector
37001Core members of the connector
3701Shape
37011comprising apertures or cavities
出願人
  • 三菱電機株式会社 MITSUBISHI ELECTRIC CORPORATION [JP]/[JP]
発明者
  • 藤野 純司 FUJINO Junji
  • 井本 裕児 IMOTO Yuji
  • 小川 翔平 OGAWA Shohei
  • 石原 三紀夫 ISHIHARA Mikio
代理人
  • 大岩 増雄 OIWA Masuo
  • 村上 啓吾 MURAKAMI Keigo
  • 竹中 岑生 TAKENAKA Mineo
  • 吉澤 憲治 YOSHIZAWA Kenji
優先権情報
2017-09439611.05.2017JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) POWER MODULE, ELECTRIC POWER CONVERSION DEVICE, AND METHOD FOR PRODUCING POWER MODULE
(FR) MODULE DE PUISSANCE, DISPOSITIF DE CONVERSION DE PUISSANCE ÉLECTRIQUE ET PROCÉDÉ DE PRODUCTION DE MODULE DE PUISSANCE
(JA) パワーモジュール、電力変換装置、およびパワーモジュールの製造方法
要約
(EN)
[Problem] The purpose of the present invention is to achieve a power module which has high reliability, while exhibiting sufficient adhesion of a sealing resin. [Solution] A power module which is provided with: an insulating substrate 11 that is obtained by forming a pattern of a conductor layer 13 on a ceramic plate; power semiconductor elements 21, 22 that are arranged on the insulating substrate 11; plate-like lead frames 611a, 612a that connect electrodes of the power semiconductor elements 21, 22 to screwed terminal parts 611b, 612b; and a sealing resin part 7 that seals the connection part and the periphery of the power semiconductor elements 21, 22 and the lead frames 611a, 612a. The lead frames 611a, 612a are provided with openings 611b and 612b in positions where the lead frames 611a, 612a at least partially overlap portions of the insulating substrate 11 when viewed in plan, in said portions the conductor layer 13 being not formed.
(FR)
Le problème décrit par la présente invention est d'obtenir un module de puissance qui présente une fiabilité élevée, tout en présentant une adhérence suffisante d'une résine d'étanchéité. La solution selon l'invention concerne un module de puissance qui comprend : un substrat isolant 11 qui est obtenu en formant un motif d'une couche conductrice 13 sur une plaque en céramique; des éléments semi-conducteurs de puissance 21, 22 qui sont disposés sur le substrat isolant 11; des grilles de connexion de type plaque 611a, 612a qui connectent des électrodes des éléments semi-conducteurs de puissance 21, 22 à des parties de borne vissée 611b, 612b; et une partie de résine d'étanchéité 7 qui étanchéifie la partie de connexion et la périphérie des éléments semi-conducteurs de puissance 21, 22 et les grilles de connexion 611a, 612a. Les grilles de connexion 611a, 612a comprennent des ouvertures 611b et 612b dans des positions où les grilles de connexion 611a, 612a chevauchent au moins partiellement des parties du substrat isolant 11 lorsqu'elles sont visualisées en plan, dans lesdites parties, la couche conductrice 13 n'étant pas formée.
(JA)
【課題】封止樹脂の密着性が十分で、かつ信頼性の高いパワーモジュールを得ることを目的とする。 【解決手段】セラミック板上に導体層13のパターンが形成された絶縁基板11と、絶縁基板11上に配置されたパワー半導体素子21、22と、パワー半導体素子21、22の電極からネジ止め端子部611b、612bに接続する板状のリードフレーム611a、612aと、パワー半導体素子21、22とリードフレーム611a、612aの接続部および周辺を封止する封止樹脂部7とを備え、リードフレーム611a、612aは、平面視において、絶縁基板11の導体層13が形成されていない部分と少なくとも一部が重なる位置に開口部611b、612bが設けられている。
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