処理中

しばらくお待ちください...

設定

設定

出願の表示

1. WO2018207340 - 固体撮像装置

公開番号 WO/2018/207340
公開日 15.11.2018
国際出願番号 PCT/JP2017/018015
国際出願日 12.05.2017
IPC
H01L 27/146 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
271つの共通基板内または上に形成された複数の半導体構成部品または他の固体構成部品からなる装置
14赤外線,可視光,短波長の電磁波または粒子線輻射に感応する半導体構成部品で,これらの輻射線エネルギーを電気的エネルギーに変換するかこれらの輻射線によって電気的エネルギーを制御するかのどちらかに特に適用されるもの
144輻射線によって制御される装置
146固体撮像装置構造
H01L 31/02 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
31赤外線,可視光,短波長の電磁波,または粒子線輻射に感応する半導体装置で,これらの輻射線エネルギーを電気的エネルギーに変換するかこれらの輻射線によって電気的エネルギーを制御かのどちらかに特に適用されるもの;それらの装置またはその部品の製造または処理に特に適用される方法または装置;それらの細部
02細部
CPC
H01L 27/14603
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14603Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
H01L 27/1461
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14609Pixel-elements with integrated switching, control, storage or amplification elements
1461characterised by the photosensitive area
H01L 27/14612
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14609Pixel-elements with integrated switching, control, storage or amplification elements
14612involving a transistor
H01L 27/14621
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
1462Coatings
14621Colour filter arrangements
H01L 27/14627
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14625Optical elements or arrangements associated with the device
14627Microlenses
H01L 27/1463
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
1463Pixel isolation structures
出願人
  • オリンパス株式会社 OLYMPUS CORPORATION [JP]/[JP]
発明者
  • 青木 潤 AOKI Jun
  • 小山 友作 KOYAMA Yusaku
代理人
  • 棚井 澄雄 TANAI Sumio
  • 志賀 正武 SHIGA Masatake
  • 鈴木 三義 SUZUKI Mitsuyoshi
  • 高柴 忠夫 TAKASHIBA Tadao
  • 鈴木 史朗 SUZUKI Shirou
  • 橋本 宏之 HASHIMOTO Hiroyuki
優先権情報
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SOLID-STATE IMAGING DEVICE
(FR) DISPOSITIF D'IMAGERIE À SEMI-CONDUCTEURS
(JA) 固体撮像装置
要約
(EN)
This solid-state imaging device is provided with a two-dimensional pixel array comprising unit pixels arrayed on a semiconductor substrate, each including a photo-electric conversion element converting incoming light into electrical signals, and a circuit element reading the converted electrical signals. With a plurality of adjacent unit pixels defined as one pixel group set, the two-dimensional pixel array comprises a row of a plurality of the one pixel group sets. The periphery of the one pixel group sets is surrounded, except for the mid-section of the plurality of adjacent unit pixels, by an insulating element dividing region that divides the semiconductor substrate into elements.
(FR)
La présente invention concerne un dispositif d'imagerie à semi-conducteurs qui est pourvu d'une matrice de pixels bidimensionnelle comprenant des pixels unitaires disposés en matrice sur un substrat semi-conducteur, comprenant chacun un élément de conversion photoélectrique convertissant la lumière entrante en signaux électriques, et un élément circuit lisant les signaux électriques convertis. Une pluralité de pixels unitaires adjacents étant définis comme un ensemble de groupes de pixels, la matrice de pixels bidimensionnelle comprend une rangée d'une pluralité d'ensembles de groupes de pixels adjacents. La périphérie des ensembles de groupes de pixels, à l'exception de la section médiane de la pluralité de pixels unitaires adjacents, est entourée par une région isolante de division en éléments qui divise le substrat semi-conducteur en éléments.
(JA)
固体撮像装置は、入射光を電気信号に変換する光電変換素子と、変換された電気信号を読み出す回路素子とを含む単位画素を半導体基板上に配列した二次元画素アレイを備え、隣接する複数の前記単位画素を1セットの画素群とするとき、前記二次元画素アレイは、前記1セットの画素群が複数並べられており、前記1セットの画素群においては、前記半導体基板を素子分離する絶縁性の素子分離領域によって、隣接する複数の前記単位画素の中間部分以外において、前記1セットの画素群の周囲が囲まれている。
他の公開
JP2019516843
国際事務局に記録されている最新の書誌情報