処理中

しばらくお待ちください...

設定

設定

出願の表示

1. WO2018199003 - 支持体及びそれを用いた半導体素子実装基板の製造方法

公開番号 WO/2018/199003
公開日 01.11.2018
国際出願番号 PCT/JP2018/016410
国際出願日 23.04.2018
IPC
H05K 3/46 2006.01
H電気
05他に分類されない電気技術
K印刷回路;電気装置の箱体または構造的細部,電気部品の組立体の製造
3印刷回路を製造するための装置または方法
46多重層回路の製造
B32B 15/08 2006.01
B処理操作;運輸
32積層体
B積層体,すなわち平らなまたは平らでない形状,例.細胞状またはハニカム状,の層から組立てられた製品
15本質的に金属からなる積層体
04層の主なまたは唯一の構成要素が金属からなり,特定物質の他の層に隣接したもの
08合成樹脂の層に隣接したもの
B32B 27/00 2006.01
B処理操作;運輸
32積層体
B積層体,すなわち平らなまたは平らでない形状,例.細胞状またはハニカム状,の層から組立てられた製品
27本質的に合成樹脂からなる積層体
H01L 23/12 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
23半導体または他の固体装置の細部
12マウント,例.分離できない絶縁基板
CPC
B32B 15/08
BPERFORMING OPERATIONS; TRANSPORTING
32LAYERED PRODUCTS
BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
15Layered products comprising ; a layer of; metal
04comprising metal as the main or only constituent of a layer, ; which is; next to another layer of ; the same or of; a ; different material
08of synthetic resin
B32B 27/00
BPERFORMING OPERATIONS; TRANSPORTING
32LAYERED PRODUCTS
BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
27Layered products comprising ; a layer of; synthetic resin
H01L 21/481
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
4803Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
481Insulating layers on insulating parts, with or without metallisation
H01L 21/4857
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
4814Conductive parts
4846Leads on or in insulating or insulated substrates, e.g. metallisation
4857Multilayer substrates
H01L 21/6835
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
6835using temporarily an auxiliary support
H01L 2221/68345
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2221Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
683for supporting or gripping
68304using temporarily an auxiliary support
68345used as a support during the manufacture of self supporting substrates
出願人
  • 三菱瓦斯化学株式会社 MITSUBISHI GAS CHEMICAL COMPANY, INC. [JP]/[JP]
発明者
  • 平野 俊介 HIRANO, Syunsuke
  • 加藤 禎啓 KATO, Yoshihiro
  • 小柏 尊明 OGASHIWA, Takaaki
  • 川下 和晃 KAWASHITA, Kazuaki
代理人
  • 稲葉 良幸 INABA, Yoshiyuki
  • 大貫 敏史 ONUKI, Toshifumi
  • 内藤 和彦 NAITO, Kazuhiko
優先権情報
2017-08883427.04.2017JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SUPPORT AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT MOUNTING SUBSTRATE IN WHICH SAID SUPPORT IS USED
(FR) SUPPORT ET PROCÉDÉ DE FABRICATION D'UN SUBSTRAT DE MONTAGE D'ÉLÉMENT SEMI-CONDUCTEUR UTILISANT LEDIT SUPPORT
(JA) 支持体及びそれを用いた半導体素子実装基板の製造方法
要約
(EN)
A support including a heat-resistant film layer and a resin layer, wherein the heat-resistant film layer is laminated on at least one surface (first surface) of the resin layer, and the resin layer is in a semi-cured state (B-stage).
(FR)
La présente invention concerne un support comprenant une couche de film résistant à la chaleur et une couche de résine, la couche de film résistant à la chaleur étant stratifiée sur au moins une surface (première surface) de la couche de résine, et la couche de résine se trouvant dans un état semi-durci (étape B).
(JA)
耐熱フィルム層と、樹脂層と、含む支持体であって、前記樹脂層の少なくとも一方の面(第1の面)に前記耐熱フィルム層が積層されており、前記樹脂層が半硬化状態(Bステージ)である、支持体。
国際事務局に記録されている最新の書誌情報