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1. WO2017073759 - 発光素子、受発光素子モジュールおよび光学式センサ

公開番号 WO/2017/073759
公開日 04.05.2017
国際出願番号 PCT/JP2016/082141
国際出願日 28.10.2016
IPC
H01L 31/12 2006.1
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
31赤外線,可視光,短波長の電磁波,または粒子線輻射に感応する半導体装置で,これらの輻射線エネルギーを電気的エネルギーに変換するかこれらの輻射線によって電気的エネルギーを制御かのどちらかに特に適用されるもの;それらの装置またはその部品の製造または処理に特に適用される方法または装置;それらの細部
121つ以上の電気光源,例.エレクトロルミネッセンス光源,と構造的に結合されたもの,例.1つの共通基板内または上に形成されたもの,およびその電気光源と電気的または光学的に結合されたもの
CPC
G01N 21/84
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
84Systems specially adapted for particular applications
H01L 25/0753
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
075the devices being of a type provided for in group H01L33/00
0753the devices being arranged next to each other
H01L 31/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
12structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
H01L 33/08
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
08with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L 33/36
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
H01L 33/60
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
58Optical field-shaping elements
60Reflective elements
出願人
  • 京セラ株式会社 KYOCERA CORPORATION [JP]/[JP]
発明者
  • 岸本 達也 KISHIMOTO, Tatsuya
  • 藤本 直樹 FUJIMOTO, Naoki
  • 安崎 俊広 ANZAKI, Toshihiro
  • 上原 賢二 UEHARA, Kenji
優先権情報
2015-21248329.10.2015JP
2015-24711718.12.2015JP
公開言語 (言語コード) 日本語 (ja)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) LIGHT-EMITTING ELEMENT, LIGHT RECEIVING AND EMITTING ELEMENT MODULE, AND OPTICAL SENSOR
(FR) ÉLÉMENT ÉLECTROLUMINESCENT, MODULE D’ÉLÉMENTS RÉCEPTEURS ET ÉMETTEURS DE LUMIÈRE, ET CAPTEUR OPTIQUE
(JA) 発光素子、受発光素子モジュールおよび光学式センサ
要約
(EN) A light-emitting element of the present disclosure is provided with: at least one first semiconductor layer having one conductivity type; a plurality of active layers laminated on the first semiconductor layer; a plurality of second semiconductor layers which are laminated on the plurality of active layers and which have another conductivity type; and a plurality of electrodes connected to the first semiconductor layer and the second semiconductor layers. Some of the plurality of electrodes are opposed to each other across the plurality of active layers, and some other of the plurality of electrodes are positioned in a region between the electrodes that are opposed to each other.
(FR) La présente invention concerne un élément électroluminescent qui comporte : au moins une première couche semi-conductrice d’un premier type de conductivité ; une pluralité de couches actives stratifiées sur la première couche semi-conductrice ; une pluralité de deuxièmes couches semi-conductrices qui sont stratifiées sur la pluralité de couches actives et qui présentent un autre type de conductivité ; et une pluralité d’électrodes connectées à la première couche semi-conductrice et aux deuxièmes couches semi-conductrices. Certaines électrodes de la pluralité d’électrodes se font face de part et d’autre de la pluralité de couches actives, et d’autres électrodes de la pluralité d’électrodes sont positionnées dans une zone située entre les électrodes qui se font face.
(JA) 本開示の発光素子は、一導電型を有した、少なくとも1つの第1半導体層と、前記第1半導体層上に積層された複数の活性層と、前記複数の活性層上に積層され、他導電型を有した、複数の第2半導体層と、前記第1半導体層および前記第2半導体層に接続された複数の電極とを備えている。そして、前記複数の電極の一部は、前記複数の活性層を挟んで、互いに対向しており、前記複数の電極の他の一部は、前記一部の間の領域に位置している。
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