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1. WO2017010010 - 半導体素子

公開番号 WO/2017/010010
公開日 19.01.2017
国際出願番号 PCT/JP2015/070449
国際出願日 16.07.2015
IPC
H01L 21/822 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
701つの共通基板内または上に形成された複数の固体構成部品または集積回路からなる装置またはその特定部品の製造または処理;集積回路装置またはその特定部品の製造
771つの共通基板内または上に形成される複数の固体構成部品または集積回路からなる装置の製造または処理
78複数の別個の装置に基板を分割することによるもの
82それぞれが複数の構成部品からなる装置,例.集積回路の製造
822基板がシリコン技術を用いる半導体であるもの
H01L 27/04 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
271つの共通基板内または上に形成された複数の半導体構成部品または他の固体構成部品からなる装置
02整流,発振,増幅またはスイッチングに特に適用される半導体構成部品を含むものであり,少なくとも1つの電位障壁または表面障壁を有するもの;少なくとも1つの電位障壁または表面障壁を有する集積化された受動回路素子を含むもの
04基板が半導体本体であるもの
CPC
H01L 21/76898
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76898formed through a semiconductor substrate
H01L 21/822
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
H01L 2223/6627
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2223Details relating to semiconductor or other solid state devices covered by the group H01L23/00
58Structural electrical arrangements for semiconductor devices not otherwise provided for
64Impedance arrangements
66High-frequency adaptations
6605High-frequency electrical connections
6627Waveguides, e.g. microstrip line, strip line, coplanar line
H01L 2225/06527
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2225Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00
04the devices not having separate containers
065the devices being of a type provided for in group H01L27/00
06503Stacked arrangements of devices
06527Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
H01L 2225/06531
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2225Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00
04the devices not having separate containers
065the devices being of a type provided for in group H01L27/00
06503Stacked arrangements of devices
06527Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
06531Non-galvanic coupling, e.g. capacitive coupling
H01L 23/481
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements
481Internal lead connections, e.g. via connections, feedthrough structures
出願人
  • ウルトラメモリ株式会社 ULTRA MEMORY INC. [JP]/[JP]
発明者
  • 齋藤 元章 SAITO, Motoaki
  • 安達 隆郎 ADACHI, Takao
代理人
  • 正林 真之 SHOBAYASHI, Masayuki
優先権情報
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SEMICONDUCTOR ELEMENT
(FR) ÉLÉMENT À SEMI-CONDUCTEUR
(JA) 半導体素子
要約
(EN)
A semiconductor element 10 that has an element first main surface 11, an element second main surface 12 that is the reverse surface from the element first main surface 11, and an element side surface 13. The semiconductor element is configured from a semiconductor substrate part 20 and an insulating layer part 30 and is provided with: a signal transmission/reception terminal 14 that is provided to the terminal first main surface 11 and that contacts and can transmit/receive signals to/from an external-substrate signal transmission/reception terminal 210 that is provided to an external substrate 200 that is external to the semiconductor element 10; and a signal transmission/reception coil 15 that is provided to the element side surface 13 and that, via the element side surface 13, can transmit/receive signals in a non-contact manner to/from an external-semiconductor-element signal transmission/reception part 120 that is provided to an external semiconductor element 100 that is external to the semiconductor element 10. The signal transmission/reception coil 15 has: a conductor that is formed inside the insulating layer part; and a conductor that is formed inside the semiconductor substrate part 20.
(FR)
L'invention porte sur un élément à semi-conducteur (10) qui présente une première surface principale d'élément (11), une seconde surface principale d'élément (12) qui est la surface opposée à la première surface principale d'élément (11), et une surface latérale d'élément (13). L'élément à semi-conducteur est conçu à partir d'une partie substrat semi-conducteur (20) et d'une partie couche isolante (30), et est pourvu : d'une borne d'émission/de réception de signal (14) qui est disposée sur la première surface principale d'élément (11) et qui entre en contact avec une borne d'émission/de réception de signal de substrat externe (210), disposée sur un substrat externe (200) qui est externe à l'élément à semi-conducteur (10), et peut lui envoyer des signaux et en recevoir des signaux ; et d'une bobine d'émission/de réception de signal (15) qui est disposée sur la surface latérale d'élément (13) et qui, par l'intermédiaire de la surface latérale d'élément (13), peut, d'une manière sans contact, envoyer des signaux à une partie d'émission/de réception de signal d'élément à semi-conducteur externe (120), disposée sur un élément à semi-conducteur externe (100) qui est externe à l'élément semi-conducteur (10), et en recevoir des signaux. La bobine d'émission/de réception de signal (15) comporte : un conducteur qui est formé à l'intérieur de la partie couche isolante ; et un conducteur qui est formé à l'intérieur de la partie substrat semi-conducteur (20).
(JA)
素子第1主面11と、素子第1主面11と反対の面である素子第2主面12と、素子側面13と有し、半導体基板部20と絶縁層部30とで構成された半導体素子10であって、素子第1主面11に設けられ、半導体素子10の外部にある外部基板200に設けられた外部基板信号送受信端子210との間で、接触して信号の送受信が可能である信号送受信端子14と、素子側面13に設けられ、半導体素子10の外部にある外部半導体素子100に設けられた外部半導体素子信号送受信部120との間で、素子側面13を介して、非接触に信号の送受信が可能である信号送受信コイル15と、を備え、信号送受信コイル15は、絶縁層部の内部に形成された導体と、半導体基板部20の内部に形成された導体と、を有する半導体素子。
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