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1. WO2017006916 - 半導体装置及び半導体装置の製造方法

公開番号 WO/2017/006916
公開日 12.01.2017
国際出願番号 PCT/JP2016/069806
国際出願日 04.07.2016
IPC
H01L 23/36 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
23半導体または他の固体装置の細部
34冷却,加熱,換気または温度補償用装置
36冷却または加熱を容易にするための材料の選択または成形,例.ヒート・シンク
H01L 23/12 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
23半導体または他の固体装置の細部
12マウント,例.分離できない絶縁基板
H01L 23/14 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
23半導体または他の固体装置の細部
12マウント,例.分離できない絶縁基板
14材料またはその電気特性に特徴のあるもの
H01L 23/40 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
23半導体または他の固体装置の細部
34冷却,加熱,換気または温度補償用装置
40分離できる冷却または加熱装置のための取り付けまたは固着手段
CPC
H01L 21/4882
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
4814Conductive parts
4871Bases, plates or heatsinks
4882Assembly of heatsink parts
H01L 2224/16225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
10Bump connectors; Manufacturing methods related thereto
15Structure, shape, material or disposition of the bump connectors after the connecting process
16of an individual bump connector
161Disposition
16151the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
16221the body and the item being stacked
16225the item being non-metallic, e.g. insulating substrate with or without metallisation
H01L 2224/2732
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
27Manufacturing methods
273by local deposition of the material of the layer connector
2731in liquid form
2732Screen printing, i.e. using a stencil
H01L 2224/29139
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
28Structure, shape, material or disposition of the layer connectors prior to the connecting process
29of an individual layer connector
29001Core members of the layer connector
29099Material
291with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
29138the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
29139Silver [Ag] as principal constituent
H01L 2224/29144
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
28Structure, shape, material or disposition of the layer connectors prior to the connecting process
29of an individual layer connector
29001Core members of the layer connector
29099Material
291with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
29138the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
29144Gold [Au] as principal constituent
H01L 2224/29147
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
28Structure, shape, material or disposition of the layer connectors prior to the connecting process
29of an individual layer connector
29001Core members of the layer connector
29099Material
291with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
29138the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
29147Copper [Cu] as principal constituent
出願人
  • 住友電気工業株式会社 SUMITOMO ELECTRIC INDUSTRIES, LTD. [JP]/[JP]
発明者
  • 道越 久人 MICHIKOSHI Hisato
  • 野津 浩史 NOTSU Hiroshi
代理人
  • 伊東 忠重 ITOH Tadashige
  • 伊東 忠彦 ITOH Tadahiko
優先権情報
2015-13656108.07.2015JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMICONDUCTEUR ET PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMICONDUCTEUR
(JA) 半導体装置及び半導体装置の製造方法
要約
(EN)
The present invention resolves deterioration of electrical performance due to reduction of heat radiation properties, and is manufactured at a low cost. A base plate 11 in which the absolute value of the difference between the linear expansion coefficient of the base plate 11 and the linear expansion coefficient of a semiconductor chip 13 is 2-10 ppm/K is used as a base plate having a difference of 7 ppm/K or less. A binding layer 12 is formed having a thickness b that is no more than 50 µm less than the thickness c of the semiconductor chip 13. Because the thickness b of the binding layer 12 is less than the thickness c of the semiconductor chip 13, the effect of heat expansion of the binding layer 12 itself when heat is generated by the semiconductor chip 13 is relatively small, and is determined by the expansion and contraction of the base plate 11. The linear expansion coefficient of the base plate 11 is set to a value near that of the semiconductor chip 13, whereby the displacement between the base plate 11 and the semiconductor chip 13 during temperature fluctuation is relatively small.
(FR)
La présente invention résout la détérioration de la performance électrique due à la réduction des propriétés de rayonnement de chaleur, et est fabriquée à un faible coût. Une plaque de base 11 dans laquelle la valeur absolue de la différence entre le coefficient de dilatation linéique de la plaque de base 11 et le coefficient de dilatation linéique d'une puce de semi-conducteur 13 est de 2 à 10 ppm/K est utilisée en tant que plaque de base ayant une différence inférieure ou égale à 7 ppm/K. Une couche de liaison 12 est formée de manière à avoir une épaisseur b qui n'a pas plus de 50 µm en moins que l'épaisseur c de la puce de semi-conducteur 13. Étant donné que l'épaisseur b de la couche de liaison 12 est inférieure à l'épaisseur c de la puce de semi-conducteur 13, l'effet de la dilatation thermique de la couche de liaison 12 elle-même lorsque de la chaleur est générée par la puce de semi-conducteur 13 est relativement petit, et est déterminé par la dilatation et la contraction de la plaque de base 11. Le coefficient de dilatation linéique de la plaque de base 11 est réglé sur une valeur proche de celle de la puce de semi-conducteur 13, grâce à quoi le déplacement entre la plaque de base 11 et la puce de semi-conducteur 13 lors d'une fluctuation de température est relativement faible.
(JA)
放熱性の低下による電気的性能の悪化を解決するとともに安価に製造する。 ベース板11は、その線膨張係数が半導体チップ13の線膨張係数との差の絶対値が7ppm/K以下のものとして2~10ppm/Kのものが使用される。接合層12は、その厚さbが半導体チップ13の厚さcと比較して薄い50μm以下に形成されている。接合層12の厚さbが半導体チップ13の厚さcに比し薄く形成されているため、半導体チップ13が発熱した場合の接合層12自体の熱膨張の影響が相対的に小さくなり、ベース板11の膨張、収縮に引っ張られる。ベース板11の線膨張係数が半導体チップ13のそれに近い値に設定されているため、温度変化時ベース板11と半導体チップ13との間での変位量が相対的に小さくなる。
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