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1. WO2016204208 - モジュールおよびその製造方法

公開番号 WO/2016/204208
公開日 22.12.2016
国際出願番号 PCT/JP2016/067875
国際出願日 16.06.2016
IPC
H01L 23/28 2006.1
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
23半導体または他の固体装置の細部
28封緘,例.封緘層,被覆
C23C 14/06 2006.1
C化学;冶金
23金属質材料への被覆;金属質材料による材料への被覆;化学的表面処理;金属質材料の拡散処理;真空蒸着,スパッタリング,イオン注入法,または化学蒸着による被覆一般;金属質材料の防食または鉱皮の抑制一般
C金属質への被覆;金属材料による材料への被覆;表面への拡散,化学的変換または置換による,金属材料の表面処理;真空蒸着,スパッタリング,イオン注入法または化学蒸着による被覆一般
14被覆形成材料の真空蒸着,スパッタリングまたはイオン注入法による被覆
06被覆材料に特徴のあるもの
C23C 14/20 2006.1
C化学;冶金
23金属質材料への被覆;金属質材料による材料への被覆;化学的表面処理;金属質材料の拡散処理;真空蒸着,スパッタリング,イオン注入法,または化学蒸着による被覆一般;金属質材料の防食または鉱皮の抑制一般
C金属質への被覆;金属材料による材料への被覆;表面への拡散,化学的変換または置換による,金属材料の表面処理;真空蒸着,スパッタリング,イオン注入法または化学蒸着による被覆一般
14被覆形成材料の真空蒸着,スパッタリングまたはイオン注入法による被覆
06被覆材料に特徴のあるもの
14金属質材料,ほう素またはけい素
20有機質基板上に被覆するもの
H01L 23/00 2006.1
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
23半導体または他の固体装置の細部
H05K 9/00 2006.1
H電気
05他に分類されない電気技術
K印刷回路;電気装置の箱体または構造的細部,電気部品の組立体の製造
9電場または磁場に対する装置または部品の遮へい
CPC
C23C 14/0036
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
0021Reactive sputtering or evaporation
0036Reactive sputtering
C23C 14/0641
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
0641Nitrides
C23C 14/14
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
14Metallic material, boron or silicon
C23C 14/24
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
24Vacuum evaporation
H01L 21/2855
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
283Deposition of conductive or insulating materials for electrodes ; conducting electric current
285from a gas or vapour, e.g. condensation
28506of conductive layers
28512on semiconductor bodies comprising elements of Group IV of the Periodic System
2855by physical means, e.g. sputtering, evaporation
H01L 21/32051
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
32051Deposition of metallic or metal-silicide layers
出願人
  • 株式会社村田製作所 MURATA MANUFACTURING CO., LTD. [JP]/[JP]
発明者
  • 山元 一生 YAMAMOTO, Issei
  • 清水 敦 SHIMIZU, Atsushi
  • 高木 陽一 TAKAGI, Yoichi
  • 中越 英雄 NAKAGOSHI, Hideo
代理人
  • 梁瀬 右司 YANASE, Yuji
優先権情報
2015-12347219.06.2015JP
公開言語 (言語コード) 日本語 (ja)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) MODULE AND METHOD FOR MANUFACTURING SAME
(FR) MODULE ET SON PROCÉDÉ DE FABRICATION
(JA) モジュールおよびその製造方法
要約
(EN) Provided is a module comprising a shield layer having excellent adhesive strength and scratch resistance. The module 1 is provided with: a wiring board 2; a plurality of components 3 mounted on an upper surface of the wiring board 2; a sealing resin layer 4 for sealing the components 3 disposed on the upper surface of the wiring board 2; and a shield layer 5 disposed so as to cover a surface of the sealing resin layer 4, wherein the shield layer 5 includes: an adhesive layer 8 which has a first adhesive film comprising any of the metals of Ti, Cr, Ni, TiCr, TiAl, NiAl, CrAl, and CrNiAl, and which is laminated on the surface of the sealing resin layer 4; a conductive layer 9 laminated on the adhesive layer 8; and a protection layer 10 which includes a protection film comprising a nitride, an oxide, or an oxinitride of any of Ti, Cr, Ni, TiCr, TiAl, NiAl, CrAl, and CrNiAl, and which is laminated on the conductive layer 9.
(FR) La présente invention porte sur un module comprenant une couche de blindage ayant une force d'adhésion et une résistance à la rayure excellentes. Le module (1) comporte : une carte de câblage (2); une pluralité de composants (3) montés sur une surface supérieure de la carte de câblage (2); une couche de résine d'étanchéité (4) destinée à sceller les composants (3) disposés sur la surface supérieure de la carte de câblage (2); et une couche de blindage (5) disposée de manière à recouvrir une surface de la couche de résine d'étanchéité (4), la couche de blindage (5) comprenant : une couche adhésive (8) qui a un premier film adhésif comprenant l'un quelconque des métaux de Ti, Cr, Ni, TiCr, TiAl, NiAl, CrAl, et CrNiAl, et qui est stratifiée sur la surface de la couche de résine d'étanchéité (4); une couche conductrice (9) stratifiée sur la couche d'adhésif (8); et une couche de protection (10), qui comprend un film de protection comprenant un nitrure, un oxyde ou un oxynitrure selon l'un quelconque de Ti, Cr, Ni, TiCr, TiAl, NiAl, CrAl, et CrNiAl, et qui est stratifiée sur la couche conductrice (9).
(JA) 密着強度および耐傷性に優れたシールド層を備えるモジュールを提供する。 モジュール1は、配線基板2と、該配線基板2の上面に実装された複数の部品3と、配線基板2の上面に設けられた各部品3を封止する封止樹脂層4と、該封止樹脂層4の表面を被覆して設けられたシールド層5とを備え、シールド層5は、Ti、Cr、Ni、TiCr、TiAl、NiAl、CrAl、CrNiAlのうちのいずれかの金属から成る第1密着膜を有し封止樹脂層4の表面に積層された密着層8と、該密着層8に積層された導電層9と、Ti、Cr、Ni、TiCr、TiAl、NiAl、CrAl、CrNiAlのうちのいずれかの窒化物、酸化物または酸窒化物から成る保護膜を有し導電層9に積層された保護層10とを有する。
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