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1. WO2015025889 - 基板処理方法および基板処理装置

公開番号 WO/2015/025889
公開日 26.02.2015
国際出願番号 PCT/JP2014/071779
国際出願日 20.08.2014
IPC
H01L 21/304 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
18不純物,例.ドーピング材料,を含むまたは含まない周期表第IV族の元素またはA↓I↓I↓IB↓V化合物から成る半導体本体を有する装置
30H01L21/20~H01L21/26に分類されない方法または装置を用いる半導体本体の処理
302表面の物理的性質または形状を変換するため,例.エッチング,ポリシング,切断
304機械的処理,例.研摩,ポリシング,切断
H01L 21/306 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
18不純物,例.ドーピング材料,を含むまたは含まない周期表第IV族の元素またはA↓I↓I↓IB↓V化合物から成る半導体本体を有する装置
30H01L21/20~H01L21/26に分類されない方法または装置を用いる半導体本体の処理
302表面の物理的性質または形状を変換するため,例.エッチング,ポリシング,切断
306化学的または電気的処理,例.電解エッチング
CPC
H01L 21/02057
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02041Cleaning
02057Cleaning during device manufacture
H01L 21/30604
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
30604Chemical etching
H01L 21/67023
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
67023for general liquid treatment, e.g. etching followed by cleaning
H01L 21/67051
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
67028for cleaning followed by drying, rinsing, stripping, blasting or the like
6704for wet cleaning or washing
67051using mainly spraying means, e.g. nozzles
H01L 21/68728
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
687using mechanical means, e.g. chucks, clamps or pinches
68714the wafers being placed on a susceptor, stage or support
68728characterised by a plurality of separate clamping members, e.g. clamping fingers
H01L 21/68764
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
687using mechanical means, e.g. chucks, clamps or pinches
68714the wafers being placed on a susceptor, stage or support
68764characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
出願人
  • 株式会社SCREENホールディングス SCREEN HOLDINGS CO., LTD. [JP/JP]; 京都府京都市上京区堀川通寺之内上る4丁目天神北町1番地の1 1-1, Tenjinkita-machi, Teranouchi-agaru 4-chome, Horikawa-dori, Kamigyo-ku, Kyoto-shi, Kyoto 6028585, JP
発明者
  • 藤井 達也 FUJII, Tatsuya; JP
代理人
  • 稲岡 耕作 INAOKA, Kosaku; JP
優先権情報
2013-17061220.08.2013JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT DEVICE
(FR) PROCÉDÉ DE TRAITEMENT DE SUBSTRAT ET DISPOSITIF DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理方法および基板処理装置
要約
(EN)
This substrate treatment method comprises: a substrate rotation step for rotating a substrate about a predetermined vertical axis at a first rotation speed; a liquid tightness step for discharging a treatment liquid from a treatment liquid discharge port of a lower surface nozzle facing the lower surface of the substrate to bring a space between the lower surface of the substrate and a first facing surface into a liquid-tight state by the treatment liquid while causing the first facing surface to face the lower surface of the rotating substrate with a predetermined first space therebetween, the liquid tightness step being executed in parallel with the substrate rotation step; and a liquid tightness cancellation step for cancelling the liquid-tight state of the space between the lower surface of the substrate and the first facing surface by moving the lower surface of the substrate and the first facing surface away from each other after the liquid tightness step.
(FR)
L'invention concerne un procédé de traitement de substrat qui comprend : une étape de rotation de substrat destinée à faire tourner un substrat autour d'un axe vertical prédéterminé à une première vitesse de rotation ; une étape d'étanchéité aux liquides destinée à évacuer un liquide de traitement à partir d'un orifice d'évacuation de liquide de traitement d'une buse de surface inférieure qui fait face à la surface inférieure du substrat pour amener un espace formé entre la surface inférieure du substrat et une première surface en regard dans un état étanche aux liquides par le liquide de traitement tout en provoquant l'orientation de la première surface en regard vers la surface inférieure du substrat rotatif, un premier espace prédéterminé étant formé entre ces dernières, l'étape d'étanchéité aux liquides étant exécutée parallèlement à l'étape de rotation de substrat ; et une étape de suppression de l'étanchéité aux liquides destinée à supprimer l'état étanche aux liquides de l'espace entre la surface inférieure du substrat et la première surface en regard par déplacement de la surface inférieure du substrat et de la première surface en regard à une certaine distance l'une de l'autre après l'étape d'étanchéité aux liquides.
(JA)
 この基板処理方法は、基板を、所定の鉛直軸線まわりに第1回転速度で回転させる基板回転ステップと、前記基板回転ステップと並行して実行され、回転中の前記基板の下面に所定の第1間隔を隔てて第1対向面を対向させつつ、前記基板の下面に対向する下面ノズルの処理液吐出口から処理液を吐出させて、前記基板の下面と前記第1対向面との間の空間を処理液で液密状態にする液密ステップと、前記液密ステップの後、前記基板の下面と前記第1対向面とを離反させることにより、前記基板の下面と前記第1対向面との間の空間の液密状態を解除する液密解除ステップとを含む。
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