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1. WO2015025582 - 電力変換装置

公開番号 WO/2015/025582
公開日 26.02.2015
国際出願番号 PCT/JP2014/064053
国際出願日 28.05.2014
IPC
H02M 7/48 2007.01
H電気
02電力の発電,変換,配電
M交流-交流,交流-直流または直流-直流変換装置,および主要な,または類似の電力供給システムと共に使用するための装置:直流または交流入力-サージ出力変換;そのための制御または調整
7交流入力一直流出力変換;直流入力―交流出力変換
42直流入力―交流出力変換であって非可逆的なもの
44静止型変換器によるもの
48制御電極をもつ放電管または制御電極をもつ半導体装置を用いるもの
CPC
H01L 2224/33
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
31Structure, shape, material or disposition of the layer connectors after the connecting process
33of a plurality of layer connectors
H01L 2224/48472
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
484Connecting portions
4847the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
48472the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
H01L 2224/73265
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
732Location after the connecting process
73251on different surfaces
73265Layer and wire connectors
H01L 2224/83801
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
83using a layer connector
838Bonding techniques
83801Soldering or alloying
H01L 2224/8384
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
83using a layer connector
838Bonding techniques
8384Sintering
H01L 2224/84801
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
84using a strap connector
848Bonding techniques
84801Soldering or alloying
出願人
  • 日立オートモティブシステムズ株式会社 HITACHI AUTOMOTIVE SYSTEMS, LTD. [JP/JP]; 茨城県ひたちなか市高場2520番地 2520, Takaba, Hitachinaka-shi, Ibaraki 3128503, JP
発明者
  • 白頭 拓真 HAKUTO Takuma; JP
  • 丹波 昭浩 TAMBA Akihiro; JP
  • 松尾 壮志 MATSUO Takeshi; JP
代理人
  • 井上 学 INOUE Manabu; 東京都千代田区丸の内一丁目6番1号 株式会社日立製作所内 c/o HITACHI, LTD., 6-1, Marunouchi 1-chome, Chiyoda-ku, Tokyo 1008220, JP
優先権情報
2013-17333023.08.2013JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) POWER CONVERSION DEVICE
(FR) DISPOSITIF DE CONVERSION DE PUISSANCE
(JA) 電力変換装置
要約
(EN)
Provided is a power conversion device having a cooling jacket that suppresses the occurrence of bypass flow caused by a draft angle. A power semiconductor module (300), which embeds a power semiconductor element and has a heat dissipation fin (305) provided on both front and back surfaces thereof, is inserted into a cooling jacket (Jw). In the cooling jacket (Jw), a draft angle provided on an inner wall (442) is eliminated, and an inner wall (447) facing the heat dissipation fin (305) is uniformly formed over the entire height of the cooling jacket (Jw) so as to have a slight gap with respect to an end of the heat dissipation fin (305). Therefore, a space (SB) is not formed, so that it is possible to suppress the occurrence of bypass flow having almost no cooling effect.
(FR)
L'invention concerne un dispositif de conversion de puissance qui comprend une chemise de refroidissement qui élimine l'apparition d'un flux de dérivation provoqué par un angle de dépouille. Un module de semi-conducteur de puissance (300) qui incorpore un élément à semi-conducteur de puissance et comporte une ailette de dissipation de chaleur (305) agencée à la fois sur ses surfaces avant et arrière, est inséré dans une chemise de refroidissement (Jw). Dans la chemise de refroidissement (Jw), un angle de dépouille formé sur une paroi interne (422) est éliminé et une paroi interne (447) qui fait face à l'ailette de dissipation de chaleur (305), est formée de façon uniforme sur toute la hauteur de la chemise de refroidissement (Jw) de sorte à former un petit espace par rapport à une extrémité de l'ailette de dissipation de chaleur (305). Par conséquent, un espace (SB) n'est pas formé de telle sorte qu'il soit possible d'éliminer l'apparition d'un flux de dérivation ne présentant quasiment pas d'effet de refroidissement.
(JA)
 抜き勾配に起因するバイパス流の発生を抑制する冷却ジャケットを有する電力変換装置を提供する。 冷却ジャケット(Jw)には、パワー半導体素子が内蔵され放熱用フィン(305)が表裏両面に設けられたパワー半導体モジュール(300)が挿通されている。冷却ジャケット(Jw)は、内壁(442)に設けられた抜き勾配が切除され、冷却ジャケット(Jw)の高さ全体に亘り、放熱用フィン(305)に対面する内壁(447)が、放熱用フィン(305)の先端と僅かなギャップを有するように一様に形成されている。このため、空間(SB)が形成されず、冷却効果の殆どないバイパス流の発生を抑制することができる。
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