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1. WO2015025526 - LED装置及びその製造方法

公開番号 WO/2015/025526
公開日 26.02.2015
国際出願番号 PCT/JP2014/004335
国際出願日 22.08.2014
IPC
H01L 33/56 2010.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
33光の放出に特に適用される少なくとも1つの電位障壁または表面障壁を有する半導体装置;それらの装置またはその部品の製造,あるいは処理に特に適用される方法または装置;それらの装置の細部
48半導体素子本体のパッケージに特徴のあるもの
52封止
56材料,例.エポキシ樹脂,シリコン樹脂
CPC
H01L 2224/48091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
4805Shape
4809Loop shape
48091Arched
H01L 2224/8592
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
85using a wire connector
85909Post-treatment of the connector or wire bonding area
8592Applying permanent coating, e.g. protective coating
H01L 2924/181
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
15Details of package parts other than the semiconductor or other solid state devices to be connected
181Encapsulation
H01L 33/44
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
44characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
52Encapsulations
56Materials, e.g. epoxy or silicone resin
出願人
  • コニカミノルタ株式会社 KONICA MINOLTA, INC. [JP/JP]; 東京都千代田区丸の内二丁目7番2号 2-7-2, Marunouchi, Chiyoda-ku, Tokyo 1007015, JP
発明者
  • 米崎 有由見 YONEZAKI, Ayumi; null
代理人
  • 鷲田 公一 WASHIDA, Kimihito; JP
優先権情報
2013-17368723.08.2013JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) LED DEVICE AND METHOD FOR MANUFACTURING SAME
(FR) DISPOSITIF À DEL, ET PROCÉDÉ DE FABRICATION ASSOCIÉ
(JA) LED装置及びその製造方法
要約
(EN)
The present invention addresses an issue of providing an LED device, which has excellent barrier characteristics with respect to water and hydrogen sulfide gas, and high light extraction efficiency over a long period of time, and a method for manufacturing the LED device. In order to solve the issue, disclosed is an LED device having a substrate and an LED element mounted on the substrate. The LED device has a translucent layer that covers the LED element and/or the substrate, and the translucent layer contains a SiO2 component of 50 mass% or more but less than 90 mass%, and a ZrO component of 10 mass% or more but less than 50 mass%.
(FR)
L'invention a pour objectif de proposer un dispositif à DEL, présentant d'excellentes caractéristiques de barrière par rapport à l'eau et au sulfure d'hydrogène gazeux, et offrant un rendement d'extraction de lumière élevé sur une longue durée. L'invention concerne en outre un procédé de fabrication de dispositif à DEL. Pour ce faire, un dispositif à DEL selon l'invention comprend un substrat et un élément de DEL monté sur le substrat. Le dispositif à DEL comporte une couche translucide qui recouvre l'élément de DEL et/ou le substrat. La couche translucide contient un composant de SiO2 en une quantité supérieure ou égale à 50 % en masse mais inférieure à 90 % en masse, et un composant de ZrO en une quantité supérieure ou égale à 10 % en masse mais inférieure à 50 % en masse.
(JA)
 本願発明は、水分や硫化水素ガスに対するバリア性が優れ、さらに長期間に亘って光取り出し効率が高いLED装置、及びその製造方法の提供を課題とする。 上記課題を解決するため、基板と、前記基板に実装されたLED素子を有するLED装置であって、前記LED素子及び前記基板のうち、少なくとも一方を被覆する透光層を有し、前記透光層がSiO成分を50質量%以上90質量%未満含み、かつZrO成分を10質量%以上50質量%未満含む、LED装置とする。
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