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1. WO2015025500 - 酸化物半導体基板及びショットキーバリアダイオード

公開番号 WO/2015/025500
公開日 26.02.2015
国際出願番号 PCT/JP2014/004154
国際出願日 08.08.2014
IPC
H01L 29/47 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
29整流,増幅,発振またはスイッチングに特に適用される半導体装置であり,少なくとも1つの電位障壁または表面障壁を有するもの;少なくとも1つの電位障壁または表面障壁,例.PN接合空乏層またはキャリア集中層,を有するコンデンサーまたは抵抗器;半導体本体または電極の細部
40電極
43構成材料に特徴のあるもの
47ショットキー障壁電極
H01L 29/872 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
29整流,増幅,発振またはスイッチングに特に適用される半導体装置であり,少なくとも1つの電位障壁または表面障壁を有するもの;少なくとも1つの電位障壁または表面障壁,例.PN接合空乏層またはキャリア集中層,を有するコンデンサーまたは抵抗器;半導体本体または電極の細部
66半導体装置の型
86整流,増幅,発振またはスイッチされる電流を流す1つ以上の電極に電流または電圧のみの変化のみを与えることにより制御可能なもの
861ダイオード
872ショットキーダイオード
CPC
H01L 29/04
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
04characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L 29/16
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
16including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
H01L 29/24
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
24including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
H01L 29/247
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
24including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
247Amorphous materials
H01L 29/26
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
26including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24 ; , e.g. alloys
H01L 29/267
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
26including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24 ; , e.g. alloys
267in different semiconductor regions ; , e.g. heterojunctions
出願人
  • 出光興産株式会社 IDEMITSU KOSAN CO.,LTD. [JP/JP]; 東京都千代田区丸の内三丁目1番1号 1-1, Marunouchi 3-chome, Chiyoda-ku, Tokyo 1008321, JP
発明者
  • 笘井 重和 TOMAI, Shigekazu; JP
  • 柴田 雅敏 SHIBATA, Masatoshi; JP
  • 川嶋 絵美 KAWASHIMA, Emi; JP
  • 矢野 公規 YANO, Koki; JP
  • 早坂 紘美 HAYASAKA, Hiromi; JP
代理人
  • 渡辺 喜平 WATANABE, Kihei; JP
優先権情報
2013-16996719.08.2013JP
2014-03025020.02.2014JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) OXIDE SEMICONDUCTOR SUBSTRATE AND SCHOTTKY BARRIER DIODE
(FR) SUBSTRAT DE SEMI-CONDUCTEUR D’OXYDE ET DIODE À BARRIÈRE DE SCHOTTKY
(JA) 酸化物半導体基板及びショットキーバリアダイオード
要約
(EN)
A Schottky barrier diode element having an n-type or p-type silicon (Si) substrate, an oxide semiconductor layer, and a Schottky electrode layer, wherein the oxide semiconductor layer contains a polycrystalline oxide and/or an amorphous oxide having gallium (Ga) as the principal component thereof.
(FR)
L’invention porte sur un élément de diode à barrière de Schottky ayant un substrat de silicium (Si) de type n ou de type p, une couche de semi-conducteur d’oxyde et une couche d’électrode de Schottky, la couche de semi-conducteur d’oxyde contenant un oxyde polycristallin et/ou un oxyde amorphe ayant du gallium (Ga) en tant que constituant principal de celui-ci.
(JA)
n型又はp型シリコン(Si)基板と、酸化物半導体層と、ショットキー電極層とを有するショットキーバリアダイオード素子であって、前記酸化物半導体層がガリウム(Ga)を主成分とする多結晶酸化物及び非晶質酸化物のいずれか一方又は両方を含むショットキーバリアダイオード素子。
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