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1. WO2015025474 - 透明電極の製造方法、透明電極、及びそれを備えた有機エレクトロルミネッセンス素子

公開番号 WO/2015/025474
公開日 26.02.2015
国際出願番号 PCT/JP2014/003956
国際出願日 28.07.2014
IPC
H05B 33/28 2006.01
H電気
05他に分類されない電気技術
B電気加熱;他に分類されない電気照明
33エレクトロルミネッセンス光源
12実質的に2次元放射面をもつ光源
26電極として使用される導電物質の配置あるいは組成によって特徴づけられたもの
28半透明電極
H01L 51/50 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
51能動部分として有機材料を用い,または能動部分として有機材料と他の材料との組み合わせを用いる固体装置;このような装置またはその部品の製造または処理に特に適用される方法または装置
50光放出に特に適用されるもの,例.有機発光ダイオード(OLED)または高分子発光ダイオード(PLED)
H05B 33/10 2006.01
H電気
05他に分類されない電気技術
B電気加熱;他に分類されない電気照明
33エレクトロルミネッセンス光源
10エレクトロルミネッセンス光源の製造に特に適用する装置または方法
H05B 33/26 2006.01
H電気
05他に分類されない電気技術
B電気加熱;他に分類されない電気照明
33エレクトロルミネッセンス光源
12実質的に2次元放射面をもつ光源
26電極として使用される導電物質の配置あるいは組成によって特徴づけられたもの
CPC
H01L 31/022466
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022466made of transparent conductive layers, e.g. TCO, ITO layers
H01L 51/445
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42specially adapted for sensing infra-red radiation, light, electro-magnetic radiation of shorter wavelength or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation ; using organic materials as the active part, or using a combination of organic materials with other material as the active part; Multistep processes for their manufacture
44Details of devices
441Electrodes
442transparent electrodes, e.g. ITO, TCO
445comprising arrangements for extracting the current from the cell, e.g. metal finger grid systems to reduce the serial resistance of transparent electrodes
H01L 51/5212
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
52Details of devices
5203Electrodes
5206Anodes, i.e. with high work-function material
5212combined with auxiliary electrode, e.g. ITO layer combined with metal lines
H01L 51/5215
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
52Details of devices
5203Electrodes
5206Anodes, i.e. with high work-function material
5215composed of transparent multilayers
H05K 1/0274
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
1Printed circuits
02Details
0274Optical details, e.g. printed circuits comprising integral optical means
Y02E 10/549
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
54Material technologies
549organic PV cells
出願人
  • 凸版印刷株式会社 TOPPAN PRINTING CO.,LTD. [JP/JP]; 東京都台東区台東一丁目5番1号 5-1, Taito 1-chome, Taito-ku, Tokyo 1100016, JP
発明者
  • 木津 貴志 KIZU, Takashi; JP
  • 増岡 宏一 MASUOKA, Hirokazu; JP
代理人
  • 廣瀬 一 HIROSE, Hajime; JP
優先権情報
2013-16975119.08.2013JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) METHOD FOR MANUFACTURING TRANSPARENT ELECTRODE, TRANSPARENT ELECTRODE, AND ORGANIC ELECTROLUMINESCENCE ELEMENT PROVIDED WITH SAID ELECTRODE
(FR) PROCÉDÉ POUR FABRIQUER UNE ÉLECTRODE TRANSPARENTE, ÉLECTRODE TRANSPARENTE ET ÉLÉMENT ÉLECTROLUMINESCENT ORGANIQUE COMPORTANT LADITE ÉLECTRODE
(JA) 透明電極の製造方法、透明電極、及びそれを備えた有機エレクトロルミネッセンス素子
要約
(EN)
 Provided are: a method for manufacturing a transparent electrode, a transparent electrode, and an organic EL element provided with said electrode, the method being capable of suppressing the reduction of surface smoothness of the transparent electrode due to height variation of transparent electroconductive layers. This transparent electrode has a transparent substrate (12), a fine-wire-structure portion (13) covering a part of the surface of the transparent substrate (12) and formed of an electroconductive material, and a transparent electroconductive layer (21) formed on the transparent substrate (12) so as to cover the fine-wire-structure portion (13); wherein the transparent electroconductive layer (21) is formed of at least two layers.
(FR)
 L'invention porte sur : un procédé pour fabriquer une électrode transparente, une électrode transparente, et un élément EL organique pourvu de ladite électrode, le procédé étant apte à supprimer la réduction de caractère lisse de surface de l'électrode transparente en raison d'une variation de hauteur de couches électroconductrices transparentes. Cette électrode transparente possède un substrat transparent (12), une partie de structure de fil fine (13) recouvrant une partie de la surface du substrat transparent (12) et formée d'un matériau électroconducteur, et une couche électroconductrice transparente (21) formée sur le substrat transparent (12) afin de recouvrir la partie de structure de fil fine (13); la couche électroconductrice transparente (21) étant formée d'au moins deux couches.
(JA)
 透明導電層の高さの不均一による透明電極の表面平滑性の低下を抑制することができる透明電極の製造方法、透明電極、及びそれを備えた有機EL素子を提供する。本発明に係る透明電極は、透明基材(12)と、透明基材(12)の表面の一部を覆う、導電材料で形成された細線構造部(13)と、細線構造部(13)を覆うように透明基材(12)上に形成された透明導電層(21)と、を有する透明電極において、透明導電層(21)を、2層以上の層で形成したものである。
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