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1. WO2015025422 - 半導体装置

公開番号 WO/2015/025422
公開日 26.02.2015
国際出願番号 PCT/JP2013/072558
国際出願日 23.08.2013
IPC
H03K 17/08 2006.01
H電気
03基本電子回路
Kパルス技術
17電子的スイッチングまたはゲート,すなわち,メークおよびブレーク接点によらないもの
08過電流または過電圧に対するスイッチ回路の保護のための変形
H01L 21/60 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
50サブグループH01L21/06~H01L21/326の一つに分類されない方法または装置を用いる半導体装置の組立
60動作中の装置にまたは装置から電流を流すためのリードまたは他の導電部材の取り付け
H01L 29/78 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
29整流,増幅,発振またはスイッチングに特に適用される半導体装置であり,少なくとも1つの電位障壁または表面障壁を有するもの;少なくとも1つの電位障壁または表面障壁,例.PN接合空乏層またはキャリア集中層,を有するコンデンサーまたは抵抗器;半導体本体または電極の細部
66半導体装置の型
68整流,増幅またはスイッチされる電流を流さない電極に電流のみまたは電位のみを与えることにより制御できるもの
76ユニポーラ装置
772電界効果トランジスタ
78絶縁ゲートによって生じる電界効果を有するもの
H03K 17/00 2006.01
H電気
03基本電子回路
Kパルス技術
17電子的スイッチングまたはゲート,すなわち,メークおよびブレーク接点によらないもの
CPC
H01L 2224/0603
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas; Manufacturing methods related thereto
04Structure, shape, material or disposition of the bonding areas prior to the connecting process
06of a plurality of bonding areas
0601Structure
0603Bonding areas having different sizes, e.g. different heights or widths
H01L 2224/45124
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
44Structure, shape, material or disposition of the wire connectors prior to the connecting process
45of an individual wire connector
45001Core members of the connector
45099Material
451with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
45117the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
45124Aluminium (Al) as principal constituent
H01L 2224/45147
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
44Structure, shape, material or disposition of the wire connectors prior to the connecting process
45of an individual wire connector
45001Core members of the connector
45099Material
451with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
45138the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
45147Copper (Cu) as principal constituent
H01L 2224/48091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
4805Shape
4809Loop shape
48091Arched
H01L 2224/4813
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
481Disposition
4813Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
H01L 2224/48132
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
481Disposition
4813Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
48132with an intermediate bond, e.g. continuous wire daisy chain
出願人
  • 三菱電機株式会社 MITSUBISHI ELECTRIC CORPORATION [JP/JP]; 東京都千代田区丸の内二丁目7番3号 7-3,Marunouchi 2-chome, Chiyoda-ku, Tokyo 1008310, JP
発明者
  • 石原 三紀夫 ISHIHARA, Mikio; JP
  • 日山 一明 HIYAMA, Kazuaki; JP
  • 川瀬 達也 KAWASE, Tatsuya; JP
  • 大佐賀 毅 OSAGA, Tsuyoshi; JP
代理人
  • 高田 守 TAKADA, Mamoru; 東京都中央区築地1丁目12番22号 コンワビル7階 特許業務法人 高田・高橋国際特許事務所 TAKADA, TAKAHASHI & PARTNERS, Konwa Bldg. 7F, 12-22, Tsukiji 1-chome, Chuo-ku, Tokyo 1040045, JP
優先権情報
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEURS
(JA) 半導体装置
要約
(EN)
 A transistor (2) is provided on a semiconductor substrate (8). A temperature detection diode (4) for monitoring the temperature on the upper surface of the semiconductor substrate (8) is provided on the semiconductor substrate (8). An external electrode (7) is connected in common to an emitter (E) of the transistor (2) and a cathode (K) of the temperature detection diode (4). It is thereby possible to omit an external electrode for the cathode (K) of the temperature detection diode (4), making it possible to reduce the size of the device and improve the assembling properties.
(FR)
 L’invention porte sur un transistor (2) qui est situé sur un substrat de semi-conducteur (8). Une diode de détection de température (4) pour surveiller la température sur la surface supérieure du substrat de semi-conducteur (8) est située sur le substrat de semi-conducteur (8). Une électrode externe (7) est connectée en commun à un émetteur (E) du transistor (2) et à une cathode (K) de la diode de détection de température (4). Il est ainsi possible d'omettre une électrode externe pour la cathode (K) de la diode de détection de température (4), rendant possible la réduction de la taille du dispositif et l’amélioration des propriétés d’assemblage.
(JA)
 半導体基板(8)上にトランジスタ(2)が設けられている。半導体基板(8)の上面の温度をモニタする温度検出用ダイオード(4)が半導体基板(8)上に設けられている。外部電極(7)がトランジスタ(2)のエミッタ(E)と温度検出用ダイオード(4)のカソード(K)に共通に接続されている。これにより、温度検出用ダイオード(4)のカソード(K)用の外部電極を省略することができるため、装置を小型化し、組み立て性を向上させることができる。
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