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1. WO2015022922 - 発光素子、及び発光素子の製造方法

公開番号 WO/2015/022922
公開日 19.02.2015
国際出願番号 PCT/JP2014/071142
国際出願日 11.08.2014
IPC
H05B 33/04 2006.01
H電気
05他に分類されない電気技術
B電気加熱;他に分類されない電気照明
33エレクトロルミネッセンス光源
02細部
04封止装置
H01L 51/50 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
51能動部分として有機材料を用い,または能動部分として有機材料と他の材料との組み合わせを用いる固体装置;このような装置またはその部品の製造または処理に特に適用される方法または装置
50光放出に特に適用されるもの,例.有機発光ダイオード(OLED)または高分子発光ダイオード(PLED)
H05B 33/02 2006.01
H電気
05他に分類されない電気技術
B電気加熱;他に分類されない電気照明
33エレクトロルミネッセンス光源
02細部
H05B 33/10 2006.01
H電気
05他に分類されない電気技術
B電気加熱;他に分類されない電気照明
33エレクトロルミネッセンス光源
10エレクトロルミネッセンス光源の製造に特に適用する装置または方法
CPC
H01L 51/5209
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
52Details of devices
5203Electrodes
5206Anodes, i.e. with high work-function material
5209characterised by the shape
H01L 51/5225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
52Details of devices
5203Electrodes
5221Cathodes, i.e. with low work-function material
5225characterised by the shape
H01L 51/5246
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
52Details of devices
5237Passivation; Containers; Encapsulation, e.g. against humidity
524Sealing arrangements having a self-supporting structure, e.g. containers
5246characterised by the peripheral sealing arrangements, e.g. adhesives, sealants
H01L 51/5253
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
52Details of devices
5237Passivation; Containers; Encapsulation, e.g. against humidity
5253Protective coatings
H01L 51/5268
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
52Details of devices
5262Arrangements for extracting light from the device
5268Scattering means
H01L 51/5275
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
52Details of devices
5262Arrangements for extracting light from the device
5275Refractive means, e.g. lens
出願人
  • JX日鉱日石エネルギー株式会社 JX NIPPON OIL & ENERGY CORPORATION [JP/JP]; 東京都千代田区大手町二丁目6番3号 6-3, Otemachi 2-chome, Chiyoda-ku, Tokyo 1008162, JP
発明者
  • 福田 真林 FUKUDA, Maki; JP
  • 西村 涼 NISHIMURA, Suzushi; JP
  • 鳥山 重隆 TORIYAMA, Shigetaka; JP
  • 關 隆史 SEKI, Takashi; JP
代理人
  • 川北 喜十郎 KAWAKITA, Kijuro; JP
優先権情報
2013-16870014.08.2013JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENT
(FR) ÉLÉMENT ÉMETTEUR DE LUMIÈRE ET PROCÉDÉ POUR FABRIQUER UN ÉLÉMENT ÉMETTEUR DE LUMIÈRE
(JA) 発光素子、及び発光素子の製造方法
要約
(EN)
This light emitting element (100) comprises: a base (40); a sealing member (101) that is arranged so as to face the base (40); a recessed and projected structure layer (142); a first electrode (92); an organic layer (94); a second electrode (98); and an adhesive layer (103). The recessed and projected structure layer (142), the first electrode (92), the organic layer (94) and the second electrode (98) are sequentially formed on the base (40) in this order. The adhesive layer (103) is arranged between the base (40) and the sealing member (101). The outer edge (142c) of the recessed and projected structure layer (142) is arranged between the inner edge (103a) of the adhesive layer (103) and the outer edge (103b) of the adhesive layer. Since the light emitting element (100) is provided with the recessed and projected structure layer (142), which functions as a diffraction grating, the light emitting element (100) has high light extraction efficiency. In addition, since the light emitting part is sealed with a sufficient sealing performance and deterioration of the light emitting part due to moisture and oxygen is suppressed, the light emitting element (100) has a long service life.
(FR)
L'invention porte sur un élément émetteur de lumière (100) qui comprend : une base (40); un élément d'étanchéité (101) qui est disposé afin de faire face à la base (40); une couche à structure renfoncée et en saillie (142); une première électrode (92); une couche organique (94); une seconde électrode (98); et une couche adhésive (103). La couche à structure renfoncée et en saillie (142), la première électrode (92), la couche organique (94) et la seconde électrode (98) sont formées séquentiellement sur la base (40) dans cet ordre. La couche adhésive (103) est disposée entre la base (40) et l'élément d'étanchéité (101). Le bord externe (142c) de la couche à structure renfoncée et en saillie (142) est agencé entre le bord interne (103a) de la couche adhésive (103) et le bord externe (103b) de la couche adhésive. Puisque l'élément émetteur de lumière (100) comporte la couche à structure renforcée et en saillie (142), qui fonctionne comme un réseau de diffraction, l'élément émetteur de lumière (100) possède une efficacité d'extraction de lumière élevée. De plus, puisque la partie d'émission de lumière est scellée de manière étanche avec une performance d'étanchéité suffisante et une détérioration de la partie d'émission de lumière en raison de l'humidité et de l'oxygène est supprimée, l'élément émetteur de lumière (100) possède une longue durée de vie.
(JA)
 発光素子100は、基材40と、前記基材40と対向して配置される封止部材101と、凹凸構造層142と、第1電極92と、有機層94と、第2電極98と、接着剤層103を含み、前記基材40上に前記凹凸構造層142、前記第1電極92、前記有機層94、及び前記第2電極98がこの順序で形成されており、前記接着剤層103が前記基材40と前記封止部材101の間に位置し、前記凹凸構造層142の外縁142cが、前記接着剤層103の内縁103aと前記接着剤層の外縁103bの間に位置する。発光素子100は、回折格子として働く凹凸構造層142を備えるため光取り出し効率が高く、また、発光部が十分な封止性能で封止され、水分及び酸素による発光部の劣化が抑制されるため、長寿命である。
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