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1. WO2015019730 - 成膜装置

公開番号 WO/2015/019730
公開日 12.02.2015
国際出願番号 PCT/JP2014/066817
国際出願日 25.06.2014
IPC
C23C 14/34 2006.01
C化学;冶金
23金属質材料への被覆;金属質材料による材料への被覆;化学的表面処理;金属質材料の拡散処理;真空蒸着,スパッタリング,イオン注入法,または化学蒸着による被覆一般;金属質材料の防食または鉱皮の抑制一般
C金属質への被覆;金属材料による材料への被覆;表面への拡散,化学的変換または置換による,金属材料の表面処理;真空蒸着,スパッタリング,イオン注入法または化学蒸着による被覆一般
14被覆形成材料の真空蒸着,スパッタリングまたはイオン注入法による被覆
22被覆の方法に特徴のあるもの
34スパッタリング
CPC
C23C 14/35
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
35by application of a magnetic field, e.g. magnetron sputtering
C23C 14/352
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
35by application of a magnetic field, e.g. magnetron sputtering
352using more than one target
H01J 37/3405
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
34operating with cathodic sputtering
3402using supplementary magnetic fields
3405Magnetron sputtering
H01J 37/3447
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
34operating with cathodic sputtering
3411Constructional aspects of the reactor
3447Collimators, shutters, apertures
H01J 37/345
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
34operating with cathodic sputtering
3411Constructional aspects of the reactor
345Magnet arrangements in particular for cathodic sputtering apparatus
出願人
  • 株式会社神戸製鋼所 KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.) [JP/JP]; 兵庫県神戸市中央区脇浜海岸通二丁目2番4号 2-4, Wakinohama-Kaigandori 2-chome, Chuo-ku, Kobe-shi, Hyogo 6518585, JP
発明者
  • 廣田 悟史 HIROTA, Satoshi; null
代理人
  • 小谷 悦司 KOTANI, Etsuji; JP
優先権情報
2013-16347706.08.2013JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) FILM FORMING DEVICE
(FR) DISPOSITIF DE FORMATION DE MEMBRANE
(JA) 成膜装置
要約
(EN)
Provided is a film forming device comprising a DMS target and a power source for film forming, said device being capable of pre-sputtering the target by using the power source for film forming. The film forming device comprises: a film forming chamber (10); first and second cathodes (20A, 20B) which each have a target (24), and are disposed adjacent to one another and in positions in which target surfaces (24a) are both orientated towards a base material inside the film forming chamber (10); magnetic field formation units (30) which form magnetic fields in the vicinity of the surfaces (24a) of both of the targets (24); the power source (40) for film forming which is connected to both of the cathodes (20A, 20B); and a shutter (50). The shutter (50) performs an opening/closing operation between: a closed position in which the shutter (50) is interposed between the base material and both of the cathode target surfaces (24a), and the target surfaces (24a) are collectively shielded from the base material; and an open position which allows film forming on the base material by opening the space between the target surfaces (24a) and the base material.
(FR)
L'invention fournit un dispositif de formation de membrane qui est équipé d'une cible pour pulvérisation magnétron double, et d'une alimentation électrique pour formation de membrane, et qui permet d'effectuer une pré-pulvérisation de ladite cible à l'aide de ladite alimentation électrique pour formation de membrane. Ledit dispositif de formation de membrane est équipé : d'une chambre de formation de membrane (10) ; d'une première ainsi que d'une seconde cathode (20A, 20B) qui possèdent chacune une cible (24), et qui sont disposées de manière à être adjacentes l'une à l'autre dans une position telle que des surfaces de cible (24a) sont toutes deux orientées du côté d'un matériau de base se trouvant à l'intérieur de la chambre de formation de membrane (10) ; d'une partie formation de champ magnétique (30) formant un champ magnétique à proximité des surfaces de cible (24a) des deux cibles (24) ; de ladite alimentation électrique pour formation de membrane (40) connectée aux deux cathodes (20A, 20B) ; et d'un volet (50). Le volet (50) exécute un mouvement d'ouverture fermeture entre une position fermeture qui se trouve entre les surfaces de cible (24a) des deux cathodes et le matériau de base, et qui isole d'un bloc les surfaces de cible (24a) du matériau de base, et une position ouverture qui dégage l'espace entre les surfaces de cible (24a) et le matériau de base, et qui autorise la formation d'une membrane sur le matériau de base.
(JA)
 DMS用ターゲット及び成膜用電源を備えた成膜装置であって、前記成膜用電源を用いて前記ターゲットのプレスパッタを行うことが可能なものを提供する。成膜装置は、成膜チャンバ(10)と、それぞれがターゲット(24)を有し、ターゲット表面(24a)がいずれも成膜チャンバ(10)内の基材の側を向く姿勢で互いに隣り合うように配置される第1及び第2カソード(20A,20B)と、両ターゲット(24)の表面(24a)の近傍に磁場を形成する磁場形成部(30)と、両カソード(20A,20B)に接続される成膜用電源(40)と、シャッタ(50)と、を備える。シャッタ(50)は、両カソードのターゲット表面(24a)と基材との間に介在して当該ターゲット表面(24a)を一括して基材から遮断する閉位置と、ターゲット表面(24a)と基材との間を開放して基材への成膜を許容する開位置との間で開閉動作する。
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