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1. WO2015019609 - X線イメージセンサー用基板

公開番号 WO/2015/019609
公開日 12.02.2015
国際出願番号 PCT/JP2014/004095
国際出願日 05.08.2014
IPC
H01L 27/146 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
271つの共通基板内または上に形成された複数の半導体構成部品または他の固体構成部品からなる装置
14赤外線,可視光,短波長の電磁波または粒子線輻射に感応する半導体構成部品で,これらの輻射線エネルギーを電気的エネルギーに変換するかこれらの輻射線によって電気的エネルギーを制御するかのどちらかに特に適用されるもの
144輻射線によって制御される装置
146固体撮像装置構造
H01L 27/144 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
271つの共通基板内または上に形成された複数の半導体構成部品または他の固体構成部品からなる装置
14赤外線,可視光,短波長の電磁波または粒子線輻射に感応する半導体構成部品で,これらの輻射線エネルギーを電気的エネルギーに変換するかこれらの輻射線によって電気的エネルギーを制御するかのどちらかに特に適用されるもの
144輻射線によって制御される装置
CPC
H01L 27/14601
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
H01L 27/14603
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14603Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
H01L 27/14612
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14609Pixel-elements with integrated switching, control, storage or amplification elements
14612involving a transistor
H01L 27/14616
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14609Pixel-elements with integrated switching, control, storage or amplification elements
14612involving a transistor
14616characterised by the channel of the transistor, e.g. channel having a doping gradient
H01L 27/14632
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14632Wafer-level processed structures
H01L 27/14658
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14643Photodiode arrays; MOS imagers
14658X-ray, gamma-ray or corpuscular radiation imagers
出願人
  • シャープ株式会社 SHARP KABUSHIKI KAISHA [JP/JP]; 大阪府大阪市阿倍野区長池町22番22号 22-22, Nagaike-cho, Abeno-ku, Osaka-shi, Osaka 5458522, JP
発明者
  • 藤原 正樹 FUJIWARA, Masaki; null
  • 田中 耕平 TANAKA, Kohhei; null
代理人
  • 特許業務法人前田特許事務所 MAEDA & PARTNERS; 大阪府大阪市中央区本町2丁目5番7号 大阪丸紅ビル5階 Osaka-Marubeni Bldg.5F, 5-7, Hommachi 2-chome, Chuo-ku, Osaka-shi, Osaka 5410053, JP
優先権情報
2013-16434307.08.2013JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) X-RAY IMAGE SENSOR SUBSTRATE
(FR) SUBSTRAT DE CAPTEUR D'IMAGE RADIOGRAPHIQUE
(JA) X線イメージセンサー用基板
要約
(EN)
A thin film transistor substrate (2) is configured from: an auxiliary capacitor electrode (7); a gate insulating film (8) provided on an insulating substrate (4) in a manner so as to cover the auxiliary capacitor electrode (7); a drain electrode (11) provided on an oxide semiconductor layer (9) and on the gate insulating film (8); a flattening film (13) provided on a passivation film (12); a capacitor electrode (14) provided on the flattening film (13); an inter-layer insulating film (16) provided on the flattening film (13); and a pixel electrode (17) formed on the inter-layer insulating film (16) and electrically connected to the drain electrode (11) via a contact hole (18).
(FR)
L'invention concerne un substrat de transistor à film mince (2) constitué des éléments suivants : une électrode de condensateur auxiliaire (7); un film isolant de gâchette (8) produit sur un substrat isolant (4) de manière à recouvrir l'électrode de condensateur auxiliaire (7); une électrode de drain (11) produite sur une couche en semiconducteur à oxyde (9) et sur le film isolant de gâchette (8); un film d'aplatissement (13) produit sur un film de passivation (12); une électrode de condensateur (14) produite sur le film d'aplatissement (13); un film isolant intercouche (16) produit sur le film d'aplatissement (13); et une électrode de pixel (17) formée sur le film isolant intercouche (16) et reliée électriquement avec l'électrode de drain (11) par le biais d'un trou de contact (18).
(JA)
 薄膜トランジスタ基板(2)は、補助容量電極(7)と、補助容量電極(7)を覆うように、絶縁基板(4)上に設けられたゲート絶縁膜(8)と、ゲート絶縁膜(8)上、及び酸化物半導体層(9)上に設けられたドレイン電極(11)と、パッシベーション膜(12)上に設けられた平坦化膜(13)と、平坦化膜(13)上に設けられた容量電極(14)と、平坦化膜(13)上に設けられた層間絶縁膜(16)と、層間絶縁膜(16)上に形成され、コンタクトホール(18)を介して、ドレイン電極(11)と電気的に接続された画素電極(17)とを備えている。
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