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1. WO2015016264 - 光電変換素子および光電変換システム

公開番号 WO/2015/016264
公開日 05.02.2015
国際出願番号 PCT/JP2014/070071
国際出願日 30.07.2014
IPC
H01L 31/054 2014.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
31赤外線,可視光,短波長の電磁波,または粒子線輻射に感応する半導体装置で,これらの輻射線エネルギーを電気的エネルギーに変換するかこれらの輻射線によって電気的エネルギーを制御かのどちらかに特に適用されるもの;それらの装置またはその部品の製造または処理に特に適用される方法または装置;それらの細部
04光起電変換装置として使用されるもの
054PV素子と直接結合したまたは一体化した光学素子,例.光反射手段または集光手段
CPC
G02B 1/005
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
1Optical elements characterised by the material of which they are made
002made of materials engineered to provide properties not available in nature, e.g. metamaterials
005made of photonic crystals or photonic band gap materials
H01L 31/022441
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022408for devices characterised by at least one potential jump barrier or surface barrier
022425for solar cells
022441Electrode arrangements specially adapted for back-contact solar cells
H01L 31/02366
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0236Special surface textures
02366of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
H01L 31/035209
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0352characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
035209comprising a quantum structures
H01L 31/054
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
Y02E 10/52
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
52PV systems with concentrators
出願人
  • シャープ株式会社 SHARP KABUSHIKI KAISHA [JP/JP]; 大阪府大阪市阿倍野区長池町22番22号 22-22, Nagaike-cho, Abeno-ku, Osaka-shi, Osaka 5458522, JP
  • 国立大学法人京都大学 KYOTO UNIVERSITY [JP/JP]; 京都府京都市左京区吉田本町36番地1 36-1, Yoshida-honmachi, Sakyo-ku, Kyoto-shi, Kyoto 6068501, JP
発明者
  • 重田 博昭 SHIGETA, Hiroaki; null
  • 野田 進 NODA, Susumu; null
  • 田中 良典 TANAKA, Yoshinori; null
  • 石▲崎▼ 賢司 ISHIZAKI, Kenji; null
  • デ ゾイサ メーナカ DE ZOYSA, Menaka; null
  • 川本 洋輔 KAWAMOTO, Yosuke; null
代理人
  • 特許業務法人HARAKENZO WORLD PATENT & TRADEMARK HARAKENZO WORLD PATENT & TRADEMARK; 大阪府大阪市北区天神橋2丁目北2番6号 大和南森町ビル Daiwa Minamimorimachi Building, 2-6, Tenjinbashi 2-chome Kita, Kita-ku, Osaka-shi, Osaka 5300041, JP
優先権情報
2013-16180602.08.2013JP
2013-17065420.08.2013JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERSION SYSTEM
(FR) ÉLÉMENT DE CONVERSION PHOTOÉLECTRIQUE ET SYSTÈME DE CONVERSION PHOTOÉLECTRIQUE
(JA) 光電変換素子および光電変換システム
要約
(EN)
 In order to provide a photoelectric conversion element having higher photoelectric conversion efficiency than realized in the past, the present invention is provided with tapered protruding parts so that different-refractive-index regions (4) are formed in a photonic crystal (S) in correspondence with a plurality of lattice points of a square lattice parallel to the in-plane direction of a photoelectric conversion layer (5), and that the different-refractive-index regions (4) are formed in a tapering shape from the light-receiving-surface side of the photoelectric conversion layer to a tip positioned inside the photoelectric conversion layer.
(FR)
 L'invention concerne un élément de conversion photoélectrique présentant une efficacité de conversion photoélectrique supérieure à ce qui a été réalisé dans le passé. La présente invention comporte des parties fuselées en saillie de telle sorte que des régions à indices de réfraction différents (4) sont formées dans un cristal photonique (S) en correspondance avec une pluralité de points de réseau d’un réseau carré parallèle à la direction dans le plan d’une couche de conversion photoélectrique (5), et de telle sorte que les régions à indices de réfraction différents (4) sont formées en une forme fuselée depuis le côté de surface de réception de lumière de la couche de conversion photoélectrique vers une extrémité positionnée à l’intérieur de la couche de conversion photoélectrique.
(JA)
 従来よりも光電変換効率を高めた光電変換素子を提供するために、フォトニック結晶(S)において、異屈折率領域(4)が、光電変換層(5)の面内方向に平行な正方格子の複数の格子点に対応して形成されており、異屈折率領域が光電変換層の受光面側から上記光電変換層の内部に位置する先端までテーパー状に形成されているテーパー状突起部を備えている。
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