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1. WO2015016110 - 光電変換素子および太陽電池

公開番号 WO/2015/016110
公開日 05.02.2015
国際出願番号 PCT/JP2014/069442
国際出願日 23.07.2014
IPC
H01L 51/44 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
51能動部分として有機材料を用い,または能動部分として有機材料と他の材料との組み合わせを用いる固体装置;このような装置またはその部品の製造または処理に特に適用される方法または装置
42赤外線,可視光,短波長の電磁波,または粒子線輻射に感応に特に適用されるもの;輻射線エネルギーを電気的エネルギーに変換するか,またはこれらの輻射線によって電気的エネルギーを制御するかのどちらかに特に適用されるもの
44装置の細部
H01G 9/20 2006.01
H電気
01基本的電気素子
Gコンデンサ;電解型のコンデンサ,整流器,検波器,開閉装置,感光装置また感温装置
9電解型コンデンサ,整流器,検波器,開閉装置,感光装置または感温装置;その製造方法
20感光装置
CPC
H01G 9/2009
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
9Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
20Light-sensitive devices
2004characterised by the electrolyte, e.g. comprising an organic electrolyte
2009Solid electrolytes
H01G 9/2027
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
9Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
20Light-sensitive devices
2027comprising an oxide semiconductor electrode
H01G 9/2031
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
9Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
20Light-sensitive devices
2027comprising an oxide semiconductor electrode
2031comprising titanium oxide, e.g. TiO2
H01G 9/204
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
9Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
20Light-sensitive devices
2027comprising an oxide semiconductor electrode
204comprising zinc oxides, e.g. ZnO
H01L 51/0032
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
H01L 51/422
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42specially adapted for sensing infra-red radiation, light, electro-magnetic radiation of shorter wavelength or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation ; using organic materials as the active part, or using a combination of organic materials with other material as the active part; Multistep processes for their manufacture
4213Comprising organic semiconductor-inorganic semiconductor hetero-junctions
422Majority carrier devices using sensitisation of widebandgap semiconductors, e.g. TiO2
出願人
  • 富士フイルム株式会社 FUJIFILM CORPORATION [JP/JP]; 東京都港区西麻布2丁目26番30号 26-30, Nishiazabu 2-chome, Minato-ku, Tokyo 1068620, JP
発明者
  • 佐藤 寛敬 SATO Hirotaka; JP
  • 小林 克 KOBAYASHI Katsumi; JP
代理人
  • 小田原 修一 ODAHARA Shuichi; JP
優先権情報
2013-15947431.07.2013JP
2014-14094208.07.2014JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL
(FR) ÉLÉMENT DE CONVERSION PHOTOÉLECTRIQUE ET CELLULE SOLAIRE
(JA) 光電変換素子および太陽電池
要約
(EN)
This photoelectric conversion element has the following: a first electrode that has a porous layer provided on top of a conductive support and a photosensitive layer comprising a light-absorbing agent provided on the surface of said porous layer; a second electrode opposite the first electrode; and a solid hole-transport layer provided between the first electrode and the second electrode. The light-absorbing agent contains a compound that has a perovskite crystal structure containing the following: cations consisting of elements from group 1 of the periodic table or cationic organic groups (A), cations consisting of metal atoms (M) from groups other than group 1 of the periodic table, and anions consisting of anionic atoms (X). The porous layer contains at least one type of insulating material. This solar cell is provided with the abovementioned photoelectric conversion element.
(FR)
La présente invention se rapporte à un élément de conversion photoélectrique qui comprend les éléments suivants : une première électrode qui comporte une couche poreuse agencée sur la partie supérieure d'un support conducteur et une couche photosensible comprenant un agent absorbant la lumière agencée sur la surface de ladite couche poreuse ; une seconde électrode opposée à la première électrode ; et une couche de transport de trou solide agencée entre la première électrode et la seconde électrode. L'agent absorbant la lumière contient un composé qui comporte une structure cristalline de pérovskite qui contient les éléments suivants : des cations qui se composent d'éléments du groupe 1 du tableau périodique ou des groupes organiques cationiques (A), des cations qui se composent d'atomes métalliques (M) des groupes autres que le groupe 1 du tableau périodique, et des anions qui se composent d'atomes anioniques (X). La couche poreuse contient au moins un type de matériau isolant. Cette cellule solaire comporte l'élément de conversion photoélectrique susmentionné.
(JA)
 光電変換素子は、導電性支持体上に設けられた多孔質層、および該多孔質層の表面に光吸収剤を設けてなる感光層を有する第一電極と、該第一電極に対向する第二電極と、該第一電極および該第二電極の間に設けられた固体正孔輸送層とを有する光電変換素子であって、光吸収剤が、周期表第一族元素もしくはカチオン性有機基Aのカチオン、周期表第一族元素以外の金属原子Mのカチオンおよびアニオン性原子Xのアニオンを有するペロブスカイト型結晶構造を持つ化合物を含み、多孔質層が少なくとも1種の絶縁材料を含む。太陽電池は、この光電変換素子を備える。
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