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1. WO2015015669 - スパッタリング装置およびスパッタリング用ターゲット

公開番号 WO/2015/015669
公開日 05.02.2015
国際出願番号 PCT/JP2014/000672
国際出願日 07.02.2014
IPC
C23C 14/34 2006.01
C化学;冶金
23金属質材料への被覆;金属質材料による材料への被覆;化学的表面処理;金属質材料の拡散処理;真空蒸着,スパッタリング,イオン注入法,または化学蒸着による被覆一般;金属質材料の防食または鉱皮の抑制一般
C金属質への被覆;金属材料による材料への被覆;表面への拡散,化学的変換または置換による,金属材料の表面処理;真空蒸着,スパッタリング,イオン注入法または化学蒸着による被覆一般
14被覆形成材料の真空蒸着,スパッタリングまたはイオン注入法による被覆
22被覆の方法に特徴のあるもの
34スパッタリング
G11B 5/851 2006.01
G物理学
11情報記憶
B記録担体と変換器との間の相対運動に基づいた情報記録
5記録担体の磁化または減磁による記録;磁気的手段による再生;そのための記録担体
84記録担体の製造に特に適合する方法または装置
851スパッタリングにより磁性層を支持体に形成するもの
CPC
C23C 14/352
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
35by application of a magnetic field, e.g. magnetron sputtering
352using more than one target
C23C 14/568
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
568Transferring the substrates through a series of coating stations
G11B 5/851
GPHYSICS
11INFORMATION STORAGE
BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
5Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
84Processes or apparatus specially adapted for manufacturing record carriers
851Coating a support with a magnetic layer by sputtering
H01J 37/3408
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
34operating with cathodic sputtering
3402using supplementary magnetic fields
3405Magnetron sputtering
3408Planar magnetron sputtering
H01J 37/345
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
34operating with cathodic sputtering
3411Constructional aspects of the reactor
345Magnet arrangements in particular for cathodic sputtering apparatus
出願人
  • キヤノンアネルバ株式会社 CANON ANELVA CORPORATION [JP/JP]; 神奈川県川崎市麻生区栗木2-5-1 2-5-1, Kurigi, Asao-ku, Kawasaki-shi, Kanagawa 2158550, JP
発明者
  • 狩野 晋 KARINO, Susumu; JP
  • 芝本 雅弘 SHIBAMOTO, Masahiro; JP
代理人
  • 大塚 康徳 OHTSUKA, Yasunori; 東京都千代田区紀尾井町3番6号 紀尾井町パークビル7F 7th Fl., Kioicho Park Bldg., 3-6, Kioicho, Chiyoda-ku, Tokyo 1020094, JP
優先権情報
2013-16184702.08.2013JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SPUTTERING APPARATUS AND SPUTTERING TARGET
(FR) APPAREIL DE PULVÉRISATION CATHODIQUE ET CIBLE DE PULVÉRISATION CATHODIQUE
(JA) スパッタリング装置およびスパッタリング用ターゲット
要約
(EN)
This sputtering apparatus is provided with: an electrode (310), which has a holding section (311) that holds a target (50), and which applies a potential to the target (50) via the holding section (311); a first magnet (331) and a second magnet (332), which are disposed by being spaced apart from each other in the direction along a substrate disposing surface (SS), on which a substrate is to be placed, such that a space (SP) between the substrate disposing surface (SS) and the holding section (311) is sandwiched between the magnets; and a shield (340) that is disposed at a position, which is between the first magnet (331) and the second magnet (332), and also between the substrate disposing surface (SS) and the holding section (311).
(FR)
L'invention porte sur un appareil de pulvérisation cathodique qui est pourvu : d'une électrode (310), qui possède une section de support (311) qui porte une cible (50) et qui applique un potentiel à la cible (50) par l'intermédiaire de la section de support (311) ; d'un premier aimant (331) et d'un second aimant (332), qui sont espacés l'un de l'autre dans la direction d'une surface de disposition de substrat (SS), sur laquelle un substrat doit être placé, de façon à ce qu'un espace (SP) entre la surface de disposition de substrat (SS) et la section de support (311) soit pris en sandwich entre les aimants ; d'un écran (340), qui est disposé entre le premier aimant (331) et le second aimant (332) et également entre la surface de disposition de substrat (SS) et la section de support (311).
(JA)
スパッタリング装置は、ターゲット50を保持する保持部311を有し保持部311を介してターゲット50に電位を与える電極310と、基板が配置されるべき基板配置面SSと保持部311との間の空間SPを挟むように、かつ、基板配置面SSに沿った方向に互いに離隔して配置された第1マグネット331および第2マグネット332と、第1マグネット331と第2マグネット332との間かつ基板配置面SSと保持部311との間の位置に配置されるシールド340と、を備える。
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