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1. WO2015015633 - 光半導体装置及びその製造方法

公開番号 WO/2015/015633
公開日 05.02.2015
国際出願番号 PCT/JP2013/070981
国際出願日 02.08.2013
IPC
H01S 5/227 2006.01
H電気
01基本的電気素子
S光を増幅または生成するために,放射の誘導放出による光増幅を用いた装置;光領域以外の電磁放射の誘導放出を用いた装置
5半導体レーザ
20半導体本体の光を導波する構造または形状
22リッジまたはストライプ構造を有するもの
227埋込みメサ構造のもの
CPC
H01S 5/2086
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave ; ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
2054Methods of obtaining the confinement
2081using special etching techniques
2086lateral etch control, e.g. mask induced
H01S 5/209
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave ; ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
2054Methods of obtaining the confinement
2081using special etching techniques
209special etch stop layers
H01S 5/2205
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave ; ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
22having a ridge or stripe structure
2205comprising special burying or current confinement layers
H01S 5/2213
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave ; ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
22having a ridge or stripe structure
2205comprising special burying or current confinement layers
2213based on polyimide or resin
H01S 5/222
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave ; ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
22having a ridge or stripe structure
2205comprising special burying or current confinement layers
2218having special optical properties
222having a refractive index lower than that of the cladding layers or outer guiding layers
H01S 5/2224
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave ; ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
22having a ridge or stripe structure
2205comprising special burying or current confinement layers
2222having special electric properties
2224semi-insulating semiconductors
出願人
  • 富士通株式会社 FUJITSU LIMITED [JP/JP]; 神奈川県川崎市中原区上小田中4丁目1番1号 1-1, Kamikodanaka 4-chome, Nakahara-ku, Kawasaki-shi, Kanagawa 2118588, JP
発明者
  • 植竹 理人 UETAKE, Ayahito; JP
  • 松田 学 MATSUDA, Manabu; JP
代理人
  • 國分 孝悦 KOKUBUN, Takayoshi; 東京都豊島区東池袋1丁目17番8号 NBF池袋シティビル5階 5th Floor, NBF Ikebukuro City Building, 17-8, Higashi-Ikebukuro 1-chome, Toshima-ku, Tokyo 1700013, JP
優先権情報
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
(FR) DISPOSITIF OPTIQUE À SEMI-CONDUCTEURS ET SON PROCÉDÉ DE FABRICATION
(JA) 光半導体装置及びその製造方法
要約
(EN)
 A semiconductor laser having a ridge waveguide structure includes: a semiconductor substrate (11); a lower-part clad layer (12) formed on the semiconductor substrate (11); an active layer (13) and a semiconductor layer (16) joined together in parallel on the lower-part clad layer (12); a first upper-part clad layer localized so as to be matched in position to the active layer (13) above the active layer (13) only; a second upper-part clad layer (18) localized so as to be matched in position to the semiconductor layer (16) only above the semiconductor layer (16); and a projecting third upper-part clad layer (18a) formed higher than the active layer (13) and trapping light guided through the active layer (13), the semiconductor layer (16) having a larger band gap than the active layer (13). Using this configuration, a highly reliable optical semiconductor device can be achieved in which electrical crosstalk between lasers and current diffusion in the ridge waveguide structure is suppressed, even when adopting a ridge waveguide structure that is comparatively easily produced.
(FR)
L'invention concerne un laser à semi-conducteur comportant une structure de guide d'ondes nervuré comprenant : un substrat à semi-conducteurs (11) ; une couche de gainage de partie inférieure (12) formée sur le substrat à semi-conducteurs (11) ; une couche active (13) et une couche à semi-conducteurs (16) assemblées en parallèle sur la couche de gainage de partie inférieure (12) ; une première couche de gainage de partie supérieure placée de façon à être mise en correspondance en position avec la couche active (13), uniquement au-dessus de la couche active (13) ; une deuxième couche de gainage de partie supérieure (18) placée de façon à être mise en correspondance en position avec la couche à semi-conducteurs (16), uniquement au-dessus de la couche à semi-conducteurs (16) ; et une troisième couche de gainage de partie supérieure de protection (18a) formée plus haut que la couche active (13) et piégeant la lumière guidée dans la couche active (13), la couche à semi-conducteurs (16) ayant une largeur de bande interdite plus grande que celle de la couche active (13). À l'aide de cette configuration, il est possible d'obtenir un dispositif optique à semi-conducteurs extrêmement fiable dans lequel la diaphonie électrique, entre des lasers et la diffusion du courant dans la structure de guide d'ondes nervuré, est supprimée, même si l'on adopte une structure de guide d'ondes nervuré qui est produite comparativement plus facilement.
(JA)
 リッジ導波路構造の半導体レーザは、半導体基板(11)と、半導体基板(11)上に形成された下部クラッド層(12)と、下部クラッド層(12)上に並列して互いに接合する活性層(13)及び半導体層(16)と、活性層(13)の上方のみに活性層(13)に位置整合して局在する第1の上部クラッド層と、半導体層(16)の上方のみに半導体層(16)に位置整合して局在する第2の上部クラッド層(18)と、活性層(13)よりも上方に形成されて活性層(13)を導波する光を閉じ込める凸状の第3の上部クラッド層(18a)とを含み、半導体層(16)は、活性層(13)よりも大きなバンドギャップを有している。この構成により、作製が比較的容易なリッジ導波路構造を採用するも、リッジ導波路構造における電流拡散及びレーザ間の電気的なクロストークを抑制した信頼性の高い光半導体装置が実現する。
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