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1. WO2015015539 - 電流センサ

公開番号 WO/2015/015539
公開日 05.02.2015
国際出願番号 PCT/JP2013/006854
国際出願日 21.11.2013
IPC
G01R 15/20 2006.01
G物理学
01測定;試験
R電気的変量の測定;磁気的変量の測定
15グループG01R17/00~G01R29/00,G01R33/00~G01R33/26またはG01R35/00に定めた形式の測定装置の細部
14電圧または電流の絶縁計測に適合するもの,例.高電圧回路または大電流回路用
20磁電変換素子を使用するもの,例.ホール効果素子
CPC
G01R 1/00
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
1Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
G01R 15/207
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
15Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00 and G01R33/00 - G01R35/00
14Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
20using galvano-magnetic devices, e.g. Hall-effect devices ; , i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
207Constructional details independent of the type of device used
G01R 19/0092
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
19Arrangements for measuring currents or voltages or for indicating presence or sign thereof
0092measuring current only
H01L 21/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L 2221/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2221Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
H01L 2224/48091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
4805Shape
4809Loop shape
48091Arched
出願人
  • 旭化成エレクトロニクス株式会社 ASAHI KASEI MICRODEVICES CORPORATION [JP/JP]; 東京都千代田区神田神保町一丁目105番地 1-105, Kanda Jinbocho, Chiyoda-ku, Tokyo 1018101, JP
発明者
  • 鈴木 健治 SUZUKI, Kenji; JP
  • 今庄 秀人 IMAJO, Hideto; JP
  • 高木 大吾 TAKAGI, Daigo; JP
代理人
  • 特許業務法人 谷・阿部特許事務所 TANI & ABE, P.C.; 東京都港区赤坂2丁目6-20 6-20, Akasaka 2-chome, Minato-ku, Tokyo 1070052, JP
優先権情報
2013-15785730.07.2013JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) CURRENT SENSOR
(FR) CAPTEUR DE COURANT
(JA) 電流センサ
要約
(EN)
The purpose of the present invention is to provide a current sensor exhibiting excellent insulation resistance. This current sensor (1) is provided with: a conductor (10); a support part (30) for supporting a signal processing IC (20); a magnetoelectric conversion element (13) which is configured so as to be capable of electrically connecting with the signal processing IC (20), and which is disposed in a gap (10a) in the conductor (10) so as to detect a magnetic field generated from current flowing in the conductor (10); and an insulation member (14) for supporting the magnetoelectric conversion element (13).
(FR)
La présente invention concerne un capteur de courant présentant une excellente résistance d'isolation. Ce capteur de courant (1) comprend : un conducteur (10); une partie de support (30) pour soutenir un circuit intégré (IC) de traitement de signal (20); un élément de conversion magnéto-électrique (13) qui est configuré de manière à pouvoir être connecté électriquement à l'IC de traitement de signal (20), et qui est disposé dans un espacement (10a) dans le conducteur (10) de manière à détecter un champ magnétique généré par le courant circulant dans le conducteur (10); et un élément d'isolation (14) pour soutenir l'élément de conversion magnéto-électrique (13).
(JA)
 絶縁耐性の優れた電流センサを提供すること。電流センサ(1)は、導体(10)と、信号処理IC(20)を支持するための支持部(30)と、信号処理IC(20)と電気的に接続可能に構成されるとともに導体(10)に流れる電流から生じる磁界を検出するように導体(10)のギャップ(10a)に配置された磁電変換素子(13)と、磁電変換素子(13)を支持する絶縁部材(14)とを備える。
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