処理中

しばらくお待ちください...

設定

設定

出願の表示

1. WO2014203587 - 基板保持回転装置およびそれを備えた基板処理装置、ならびに基板処理方法

公開番号 WO/2014/203587
公開日 24.12.2014
国際出願番号 PCT/JP2014/059396
国際出願日 31.03.2014
IPC
H01L 21/683 2006.1
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
67製造または処理中の半導体または電気的固体装置の取扱いに特に適用される装置;半導体または電気的固体装置もしくは構成部品の製造または処理中のウエハの取扱いに特に適用される装置
683支持または把持のためのもの
H01L 21/027 2006.1
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
027その後のフォトリソグラフィック工程のために半導体本体にマスクするもので,グループH01L21/18またはH01L21/34に分類されないもの
CPC
B08B 3/02
BPERFORMING OPERATIONS; TRANSPORTING
08CLEANING
BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
3Cleaning by methods involving the use or presence of liquid or steam
02Cleaning by the force of jets or sprays
B08B 3/10
BPERFORMING OPERATIONS; TRANSPORTING
08CLEANING
BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
3Cleaning by methods involving the use or presence of liquid or steam
04Cleaning involving contact with liquid
10with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity, by vibration
H01L 21/02052
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02041Cleaning
02043Cleaning before device manufacture, i.e. Begin-Of-Line process
02052Wet cleaning only
H01L 21/67023
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
67023for general liquid treatment, e.g. etching followed by cleaning
H01L 21/67046
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
67028for cleaning followed by drying, rinsing, stripping, blasting or the like
6704for wet cleaning or washing
67046using mainly scrubbing means, e.g. brushes
H01L 21/67051
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
67028for cleaning followed by drying, rinsing, stripping, blasting or the like
6704for wet cleaning or washing
67051using mainly spraying means, e.g. nozzles
出願人
  • 株式会社SCREENホールディングス SCREEN HOLDINGS CO., LTD. [JP]/[JP]
発明者
  • 加藤 洋 KATO, Hiroshi
代理人
  • 稲岡 耕作 INAOKA, Kosaku
優先権情報
2013-12766118.06.2013JP
公開言語 (言語コード) 日本語 (ja)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SUBSTRATE HOLDING AND ROTATING DEVICE, SUBSTRATE PROCESSING DEVICE EQUIPPED WITH SAME, AND SUBSTRATE PROCESSING METHOD
(FR) DISPOSITIF DE MAINTIEN ET DE ROTATION DE SUBSTRAT, DISPOSITIF DE TRAITEMENT DE SUBSTRAT ÉQUIPÉ DE CELUI-CI ET PROCÉDÉ DE TRAITEMENT DE SUBSTRAT
(JA) 基板保持回転装置およびそれを備えた基板処理装置、ならびに基板処理方法
要約
(EN) A substrate processing device (1) contains a rotating stage (7), a rotation drive mechanism (3), a retainer pin (10) provided on the rotating stage (7), a protection disc (15) for covering the bottom surface of a substrate (W), and a magnetic levitation mechanism (41) for levitating the protection disc (15) from the rotating stage (7). The protection disc (15) is movable vertically between a lower position and a proximal position higher than the lower position and proximal to the bottom surface of the substrate. The magnetic levitation mechanism (41) contains a protection-disc-side permanent magnet (60) and a circular, guard-side permanent magnet (25) held by a splash guard (4). Raising the splash guard (4) via the guard drive mechanism (5) allows the protection disc (15) to be levitated from the rotating stage (7) and retained in the proximal position by a magnetic repulsion force between the permanent magnets.
(FR) L'invention concerne un dispositif de traitement de substrat (1) contenant une platine tournante (7), un mécanisme d'entraînement en rotation (3), une broche de retenue (10) montée sur la platine tournante (7), un disque de protection (15) pour couvrir la surface inférieure d'un substrat (W), et un mécanisme de lévitation magnétique (41) pour amener le disque de protection (15) en lévitation par rapport à la platine tournante (7). Le disque de protection (15) peut être déplacé verticalement entre une position inférieure et une position proximale plus haute que la position inférieure et proximale de la surface inférieure du substrat. Le mécanisme de lévitation magnétique (41) contient un aimant permanent côté disque de protection (60) et un aimant permanent circulaire côté protection (25) maintenu par une protection contre les projections (4). L'élévation de la protection contre les projections (4) par le biais du mécanisme d'entraînement de protection (5) permet au disque de protection (15) d'être amené en lévitation par rapport à la platine tournante (7) et d'être maintenu dans la position proximale par une force de répulsion magnétique entre les aimants permanents.
(JA)  基板処理装置(1)は、回転台(7)と、回転駆動機構(3)と、回転台(7)に設けられた保持ピン(10)と、基板(W)の下面を覆うための保護ディスク(15)と、保護ディスク(15)を回転台(7)から浮上させる磁気浮上機構(41)とを含む。保護ディスク(15)は、下位置と、下位置よりも上方において基板の下面に接近した接近位置との間で上下動可能である。磁気浮上機構(41)は、保護ディスク側永久磁石(60)と、スプラッシュガード(4)に保持された環状のガード側永久磁石(25)とを含む。ガード駆動機構(5)によってスプラッシュガード(4)を上昇させると、永久磁石の間の磁気反発力によって、保護ディスク(15)を回転台(7)から浮上させて接近位置に保持できる。
国際事務局に記録されている最新の書誌情報