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1. WO2014196307 - バックコンタクト型太陽電池セル

公開番号 WO/2014/196307
公開日 11.12.2014
国際出願番号 PCT/JP2014/062386
国際出願日 08.05.2014
IPC
H01L 31/0224 2006.1
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
31赤外線,可視光,短波長の電磁波,または粒子線輻射に感応する半導体装置で,これらの輻射線エネルギーを電気的エネルギーに変換するかこれらの輻射線によって電気的エネルギーを制御かのどちらかに特に適用されるもの;それらの装置またはその部品の製造または処理に特に適用される方法または装置;それらの細部
02細部
0224電極
CPC
H01L 31/022433
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022408for devices characterised by at least one potential jump barrier or surface barrier
022425for solar cells
022433Particular geometry of the grid contacts
H01L 31/022441
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022408for devices characterised by at least one potential jump barrier or surface barrier
022425for solar cells
022441Electrode arrangements specially adapted for back-contact solar cells
H01L 31/022458
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022408for devices characterised by at least one potential jump barrier or surface barrier
022425for solar cells
022441Electrode arrangements specially adapted for back-contact solar cells
022458for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
H01L 31/0516
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
042PV modules or arrays of single PV cells
05Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
0504specially adapted for series or parallel connection of solar cells in a module
0516specially adapted for interconnection of back-contact solar cells
H01L 31/0682
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
068the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
0682back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
Y02E 10/547
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
547Monocrystalline silicon PV cells
出願人
  • 信越化学工業株式会社 SHIN-ETSU CHEMICAL CO., LTD. [JP]/[JP]
発明者
  • 森 力 MORI Chikara
  • 渡部 武紀 WATABE Takenori
  • 大塚 寛之 OTSUKA Hiroyuki
代理人
  • 折坂 茂樹 ORISAKA Shigeki
優先権情報
2013-12082607.06.2013JP
公開言語 (言語コード) 日本語 (ja)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) BACK-CONTACT-TYPE SOLAR CELL
(FR) CELLULE SOLAIRE DE TYPE À CONTACT ARRIÈRE
(JA) バックコンタクト型太陽電池セル
要約
(EN) Provided is a back-contact-type solar cell which exhibits little power loss, with which busbars can be freely positioned, and which has a simple production process. The present invention is provided with: a semiconductor substrate; first conductivity-type regions formed at a rear-surface side of the semiconductor substrate, said rear-surface side being at a side opposite to a light-receiving-surface side of the semiconductor substrate; second conductivity-type regions formed at the rear-surface side of the semiconductor substrate; first conductivity-type collector electrodes linearly formed upon the first conductivity-type regions; and second conductivity-type collector electrodes linearly formed upon the second conductivity-type regions. The first conductivity-type regions and the second conductivity-type regions are alternately arranged. The first conductivity-type collector electrodes and the second conductivity-type collector electrodes are provided with discontinuity sites. In an arrangement direction in which the first conductivity-type regions and the second conductivity-type regions are alternately arranged, the discontinuity sites are provided so as to be arranged along substantially straight lines for each conductivity type.
(FR) La présente invention concerne une cellule solaire de type à contact arrière, qui fait preuve de peu de perte de puissance, avec laquelle des barres omnibus peuvent être librement positionnées, et dont le procédé de production est simple. La présente invention comprend : un substrat semi-conducteur; des régions d'un premier type de conductivité formées au niveau du côté de surface arrière du substrat semi-conducteur, ledit côté de surface arrière étant au niveau d'un côté opposé à un côté de surface de réception de lumière du substrat semi-conducteur; des régions d'un second type de conductivité formées au niveau du côté de surface arrière du substrat semi-conducteur; des électrodes de connecteur d'un premier type de conductivité formées de manière linéaire sur les régions d'un premier type de conductivité; et des électrodes de connecteur d'un second type de conductivité formées de manière linéaire sur les régions d'un second type de conductivité. Les régions d'un premier type de conductivité et les régions d'un second type de conductivité sont agencées de manière alternative. Les électrodes de connecteur d'un premier type de conductivité et les électrodes de connecteur d'un second type de conductivité sont disposées avec des sites de discontinuité. Dans une direction d'agencement dans laquelle les régions d'un premier type de conductivité et les régions d'un second type de conductivité sont agencées de manière alternative, les sites de discontinuité sont disposés de façon à être agencés le long de lignes sensiblement droites pour chaque type de conductivité.
(JA) 電力ロスが少なく、バスバーの位置取りが自由で、製造工程が簡易なバックコンタクト型太陽電池を提供する。半導体基板と、半導体基板の受光面側とは反対側の裏面側に形成された第一の導電型領域と、半導体基板の裏面側に形成された第二の導電型領域と、第一の導電型領域の上に直線状に形成された第一の導電型集電電極と、第二の導電型領域の上に直線状に形成された第二の導電型集電電極とを備え、第一の導電型領域と第二の導電型領域とは交互に配列され、第一の導電型集電電極および第二の導電型集電電極は、不連続箇所を有し、当該不連続箇所は、第一の導電型領域と第二の導電型領域とが交互に配列される配列方向において、導電型ごとに略一直線上に並ぶように設けられる。
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