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1. WO2014192237 - 半導体発光素子及び半導体発光装置

公開番号 WO/2014/192237
公開日 04.12.2014
国際出願番号 PCT/JP2014/002538
国際出願日 14.05.2014
IPC
H01L 33/36 2010.1
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
33光の放出に特に適用される少なくとも1つの電位障壁または表面障壁を有する半導体装置;それらの装置またはその部品の製造,あるいは処理に特に適用される方法または装置;それらの装置の細部
36電極に特徴があるもの
H01L 33/48 2010.1
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
33光の放出に特に適用される少なくとも1つの電位障壁または表面障壁を有する半導体装置;それらの装置またはその部品の製造,あるいは処理に特に適用される方法または装置;それらの装置の細部
48半導体素子本体のパッケージに特徴のあるもの
H01L 33/50 2010.1
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
33光の放出に特に適用される少なくとも1つの電位障壁または表面障壁を有する半導体装置;それらの装置またはその部品の製造,あるいは処理に特に適用される方法または装置;それらの装置の細部
48半導体素子本体のパッケージに特徴のあるもの
50波長変換要素
H01L 33/60 2010.1
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
33光の放出に特に適用される少なくとも1つの電位障壁または表面障壁を有する半導体装置;それらの装置またはその部品の製造,あるいは処理に特に適用される方法または装置;それらの装置の細部
48半導体素子本体のパッケージに特徴のあるもの
58光の形状を形成する要素
60反射要素
CPC
F21S 41/151
FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
21LIGHTING
SNON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
41Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
10characterised by the light source
14characterised by the type of light source
141Light emitting diodes [LED]
151arranged in one or more lines
F21S 41/337
FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
21LIGHTING
SNON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
41Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
30characterised by reflectors
32Optical layout thereof
33Multi-surface reflectors, e.g. reflectors with facets or reflectors with portions of different curvature
337the reflector having a structured surface, e.g. with facets or corrugations
H01L 2224/16225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
10Bump connectors; Manufacturing methods related thereto
15Structure, shape, material or disposition of the bump connectors after the connecting process
16of an individual bump connector
161Disposition
16151the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
16221the body and the item being stacked
16225the item being non-metallic, e.g. insulating substrate with or without metallisation
H01L 2224/45144
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
44Structure, shape, material or disposition of the wire connectors prior to the connecting process
45of an individual wire connector
45001Core members of the connector
45099Material
451with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
45138the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
45144Gold (Au) as principal constituent
H01L 2224/48091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
4805Shape
4809Loop shape
48091Arched
H01L 2224/48464
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
484Connecting portions
48463the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
48464the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
出願人
  • スタンレー電気株式会社 STANLEY ELECTRIC CO., LTD. [JP]/[JP]
発明者
  • 宮地 護 MIYACHI, Mamoru
  • 斎藤 竜舞 SAITO, Tatsuma
代理人
  • 高橋 敬四郎 TAKAHASHI, Keishiro
優先権情報
2013-11391630.05.2013JP
公開言語 (言語コード) 日本語 (ja)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SEMICONDUCTOR LIGHT-EMITTING DEVICE
(FR) ÉLÉMENT ÉLECTROLUMINESCENT SEMI-CONDUCTEUR ET DISPOSITIF ÉLECTROLUMINESCENT SEMI-CONDUCTEUR
(JA) 半導体発光素子及び半導体発光装置
要約
(EN)  A semiconductor light-emitting element has: a semiconductor laminate including an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer; a plurality of via holes penetrating the light-emitting layer from the p-type semiconductor layer of the semiconductor laminate, the plurality of via holes exposing the n-type semiconductor layer; light-reflective p-side electrodes respectively isolated from edges of the p-type semiconductor layer and the plurality of via holes, the p-side electrodes extending over the p-type semiconductor layer; insulating layers leaving bottom surfaces of the plurality of via holes exposed but covering inner side faces of the via holes, the insulating layers extending over edge portions of second semiconductor-side electrodes; and a plurality of light-reflective n-side electrodes electrically connected to the n-type semiconductor layer at the bottom of each of the plurality of via holes, the n-side electrodes being drawn over the p-type semiconductor layer and the p-side electrodes across the insulating layers and being disposed so as to overlap the p-side electrodes with no gap in a plan view.
(FR)  L'invention concerne un élément électroluminescent semi-conducteur qui a : un stratifié semi-conducteur comprenant une couche semi-conductrice de type-n, une couche électroluminescente et une couche semi-conductrice de type-p ; une pluralité de trous d'interconnexion pénétrant dans la couche électroluminescente depuis la couche semi-conductrice de type-p du stratifié semi-conducteur, la pluralité de trous d'interconnexion découvrant la couche semi-conductrice de type-n ; des électrodes du côté de type-p réfléchissant la lumière respectivement isolées des bords de la couche semi-conductrice de type-p et de la pluralité de trous d'interconnexion, les électrodes du côté de type-p s'étendant au-dessus de la couche semi-conductrice de type-p ; des couches isolantes quittant les surfaces inférieures de la pluralité de trous d'interconnexion découverts mais recouvrant les faces des côtés intérieurs des trous d'interconnexion, les couches isolantes s'étendant au-dessus des parties de bord de secondes électrodes du côté semi-conducteur ; et une pluralité d'électrodes du côté de type-n réfléchissant la lumière électriquement connectées à la couche semi-conductrice de type-n au fond de chaque trou de la pluralité de trous d'interconnexion, les électrodes du côté de type-n étant tirées au-dessus de la couche semi-conductrice de type-p et des électrodes du côté de type-p à travers les couches isolantes et étant disposées de manière à recouvrir les électrodes du côté de type-p sans vide dans une vue planaire.
(JA)  半導体発光素子は、n半導体層と、発光層と、p型半導体層とを含む半導体積層と;半導体積層のp型半導体層から発光層を貫通し、n型半導体層を露出する、複数のビア孔と;p型半導体層の周縁および複数のビア孔それぞれから離隔されて、p型半導体層上に延在し、光反射性を有するp側電極と;複数のビア孔の底面を露出し、ビア孔内側面を覆い、第2半導体側電極の周縁部上まで延在する絶縁層と;複数のビア孔それぞれの底部でn型半導体層と電気的に接続し、絶縁層を介して、p型半導体層及びp側電極の上方に引き出され、p側電極に平面視上、間隙なく、オーバーラップして配置された、光反射性を有する複数のn側電極と;を有する。
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