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1. WO2014171270 - 基板処理装置、デバイス製造方法、走査露光方法、露光装置、デバイス製造システム及びデバイス製造方法

パーマリンク
公開番号 WO/2014/171270
公開日 23.10.2014
国際出願番号 PCT/JP2014/058109
国際出願日 24.03.2014
IPC
G03F 7/24 2006.1
G物理学
03写真;映画;光波以外の波を使用する類似技術;電子写真;ホログラフイ
Fフォトメカニカル法による凹凸化又はパターン化された表面の製造,例.印刷用,半導体装置の製造法用;そのための材料;そのための原稿;そのために特に適合した装置
7フォトメカニカル法,例.フォトリソグラフ法,による凹凸化又はパターン化された表面,例.印刷表面,の製造;そのための材料,例.フォトレジストからなるもの;そのため特に適合した装置
20露光;そのための装置
24カーブした表面への露光
CPC
G03F 7/20
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
G03F 7/24
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
24Curved surfaces
G03F 7/70008
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70008Production of exposure light, i.e. light sources
G03F 7/70258
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70216Systems for imaging mask onto workpiece
70258Projection system adjustment, alignment during assembly of projection system
G03F 7/70291
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70216Systems for imaging mask onto workpiece
70283Masks or their effects on the imaging process, e.g. Fourier masks, greyscale masks, holographic masks, phase shift masks, phasemasks, lenticular masks, multiple masks, tilted masks, tandem masks
70291Addressable masks
G03F 7/70358
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70216Systems for imaging mask onto workpiece
70358Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
出願人
  • 株式会社ニコン NIKON CORPORATION [JP]/[JP]
発明者
  • 加藤　正紀 KATO, Masaki
  • 鈴木　智也 SUZUKI, Tomonari
  • 鬼頭　義昭 KITO, Yoshiaki
  • 堀　正和 HORI, Masakazu
  • 林田　洋祐 HAYASHIDA, Yosuke
  • 木内　徹 KIUCHI, Toru
代理人
  • 酒井　宏明 SAKAI, Hiroaki
優先権情報
2013-08765018.04.2013JP
2013-15496525.07.2013JP
公開言語 (言語コード) 日本語 (ja)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SUBSTRATE PROCESSING APPARATUS, DEVICE MANUFACTURING METHOD, SCANNING EXPOSURE METHOD, EXPOSURE APPARATUS, DEVICE MANUFACTURING SYSTEM, AND DEVICE MANUFACTURING METHOD
(FR) APPAREIL DE TRAITEMENT DE SUBSTRAT, PROCÉDÉ DE FABRICATION DE DISPOSITIF, PROCÉDÉ D'EXPOSITION À UN BALAYAGE, APPAREIL D'EXPOSITION, SYSTÈME DE FABRICATION DE DISPOSITIF, ET PROCÉDÉ DE FABRICATION DE DISPOSITIF
(JA) 基板処理装置、デバイス製造方法、走査露光方法、露光装置、デバイス製造システム及びデバイス製造方法
front page image
要約
(EN) The present invention is provided with the following: a first support member that supports either a mask or a substrate along a cylindrically curved first surface that has a given radius of curvature; a second support member that supports either the mask or the substrate, whichever is not supported by the first support member, along a given second surface; and a movement mechanism that rotates the first support member and moves the second support member so as to move the mask and the substrate in a scanning-exposure direction. Projection optics form an image of a pattern on a given image plane via a light beam that includes a principal light ray that is substantially parallel to a line perpendicular to the center of a projection region in the scanning-exposure direction. The movement mechanism sets the movement rate of the first support member and the movement rate of the second support member such that the support member for either the image plane onto which the pattern is projected or the substrate surface being exposed, specifically the one which is flat or has the higher radius of curvature, moves at a slower rate than the other support member.
(FR) La présente invention comporte les éléments suivants : un premier élément de support qui supporte un masque ou un substrat le long d'une première surface courbée cylindriquement qui a un rayon donné de courbure; un deuxième élément de support qui supporte le masque ou le substrat, lequel n'est pas supporté par le premier élément de support, le long d'une deuxième surface donnée; et un mécanisme de mouvement qui fait pivoter le premier élément de support et déplace le deuxième élément de support de façon à déplacer le masque et le substrat dans une direction d'exposition à un balayage. Une optique de projection forme une image d'un schéma sur un plan d'image donné par l'intermédiaire d'un faisceau lumineux qui comprend un rayon lumineux principal qui est pratiquement parallèle à une ligne perpendiculaire au centre d'une région de projection dans la direction d'exposition à un balayage. Le mécanisme de mouvement fixe le taux de mouvement du premier élément de support et le taux de mouvement du deuxième élément de support de telle sorte que l'élément de support pour le plan d'image sur lequel le schéma est projeté ou la surface de substrat exposée, spécifiquement, celui qui est plat ou a le plus grand rayon de courbure, se déplace à une vitesse inférieure à celle de l'autre élément de support.
(JA) 　所定曲率で円筒面状に湾曲した第１面に沿うように、マスクと基板とのうちの一方を支持する第１支持部材と、所定の第２面に沿うようにマスクと基板とのうちの他方を支持する第２支持部材と、第１支持部材を回転させ、かつ、第２支持部材を移動させ、マスクと基板とを走査露光方向に移動させる移動機構と、を備え、投影光学系は、投影領域の走査露光方向の中心に垂直な線に略平行な主光線を含む投影光束によってパターンの像を所定の投影像面に形成し、移動機構は、第１支持部材の移動速度及び第２支持部材の移動速度を設定し、パターンの投影像面と基板の露光面とのうち曲率がより大きい面又は平面となる側の移動速度を他方の移動速度よりも相対的に小さくする。
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