ご意見送信
設定

設定

出願の表示

1. WO2014162387 - ワイヤの接続構造及び電気機器

パーマリンク
公開番号 WO/2014/162387
公開日 09.10.2014
国際出願番号 PCT/JP2013/059827
国際出願日 01.04.2013
IPC
H01L 21/60 2006.1
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
50サブグループH01L21/06~H01L21/326の一つに分類されない方法または装置を用いる半導体装置の組立
60動作中の装置にまたは装置から電流を流すためのリードまたは他の導電部材の取り付け
G09F 9/00 2006.1
G物理学
09教育;暗号方法;表示;広告;シール
F表示;広告;サイン;ラベルまたはネームプレート;シール
9情報が個々の要素の選択または組合せによって支持体上に形成される可変情報用の指示装置
CPC
H01L 2224/45144
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
44Structure, shape, material or disposition of the wire connectors prior to the connecting process
45of an individual wire connector
45001Core members of the connector
45099Material
451with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
45138the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
45144Gold (Au) as principal constituent
H01L 2224/45147
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
44Structure, shape, material or disposition of the wire connectors prior to the connecting process
45of an individual wire connector
45001Core members of the connector
45099Material
451with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
45138the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
45147Copper (Cu) as principal constituent
H01L 2224/48091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
4805Shape
4809Loop shape
48091Arched
H01L 2224/48453
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
484Connecting portions
4845Details of ball bonds
48451Shape
48453of the interface with the bonding area
H01L 2224/48463
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
484Connecting portions
48463the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
H01L 2224/49175
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
49of a plurality of wire connectors
491Disposition
4912Layout
49175Parallel arrangements
出願人
  • パイオニア株式会社 PIONEER CORPORATION [JP]/[JP]
  • 東北パイオニア株式会社 TOHOKU PIONEER CORPORATION [JP]/[JP]
発明者
  • 大峡　秀隆 OHAZAMA Hidetaka
代理人
  • 速水　進治 HAYAMI Shinji
優先権情報
公開言語 (言語コード) 日本語 (ja)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) WIRE CONNECTION STRUCTURE AND ELECTRICAL DEVICE
(FR) STRUCTURE DE CONNEXION PAR CÂBLE ET DISPOSITIF ÉLECTRIQUE
(JA) ワイヤの接続構造及び電気機器
front page image
要約
(EN) Provided is a wire connection structure in which at least a first surface of a substrate (100) is formed from an insulator. A conductor (20) is formed on the first surface. The conductor (20) is covered by a sealing film (210). The sealing film (210) is, for example, an aluminum oxide film. An opening (212) is formed in the sealing film (210). The opening (212) is positioned above a part (an end, for example) of the conductor (20) in a planar view. A wire (30) is connected to the conductor (20). The wire (30) is connected to the conductor (20) by passing one end (32) of said wire (30) through the opening (212).
(FR) Cette invention concerne une structure de connexion par câble dans laquelle au moins une première surface d'un substrat (100) est constituée d'un matériau isolant. Un conducteur (20) est formé sur la première surface. Le conducteur (20) est couvert d'un film d'encapsulation (210). Ledit film d'encapsulation (210) est, par exemple, un film d'oxyde d'aluminium. Une ouverture (212) est ménagée dans le film d'encapsulation (210). L'ouverture (212) est disposée au-dessus d'une partie (par exemple, une extrémité) du conducteur (20) vu en plan. Un câble (30) est relié au conducteur (20). Ledit câble (30) est relié au conducteur (20) par insertion d'une extrémité (32) dudit câble (30) à travers l'ouverture (212).
(JA) 　基板（１００）のうち少なくとも第１面は、絶縁物により形成されている。そしてこの第１面には、導体（２０）が形成されている。導体（２０）は、封止膜（２１０）によって覆われている。封止膜（２１０）は、例えば酸化アルミニウム膜である。そして封止膜（２１０）には、開口（２１２）が形成されている。開口（２１２）は、平面視で導体（２０）の一部（例えば一端）の上に位置している。そして、導体（２０）には、ワイヤ（３０）が接続している。ワイヤ（３０）は、一端（３２）が開口（２１２）を通過することにより、導体（２０）に接続している。
国際事務局に記録されている最新の書誌情報
# -