処理中

しばらくお待ちください...

設定

設定

出願の表示

1. WO2014125688 - III族窒化物複合基板およびその製造方法、積層III族窒化物複合基板、ならびにIII族窒化物半導体デバイスおよびその製造方法

公開番号 WO/2014/125688
公開日 21.08.2014
国際出願番号 PCT/JP2013/080550
国際出願日 12.11.2013
IPC
H01L 21/02 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
H01L 33/32 2010.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
33光の放出に特に適用される少なくとも1つの電位障壁または表面障壁を有する半導体装置;それらの装置またはその部品の製造,あるいは処理に特に適用される方法または装置;それらの装置の細部
02半導体素子本体に特徴のあるもの
26発光領域の材料
30III族およびV族元素のみを有するもの
32窒素を含むもの
CPC
C23C 16/303
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
301AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
303Nitrides
H01L 21/02389
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
0237Materials
02387Group 13/15 materials
02389Nitrides
H01L 21/0242
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
0237Materials
0242Crystalline insulating materials
H01L 21/02439
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02436Intermediate layers between substrates and deposited layers
02439Materials
H01L 21/0254
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02538Group 13/15 materials
0254Nitrides
H01L 21/02587
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02587Structure
出願人
  • 住友電気工業株式会社 SUMITOMO ELECTRIC INDUSTRIES, LTD. [JP]/[JP]
発明者
  • 石橋 恵二 ISHIBASHI, Keiji
  • 柳澤 拓弥 YANAGISAWA, Takuya
  • 上松 康二 UEMATSU, Koji
  • 関 裕紀 SEKI, Yuki
  • 山本 喜之 YAMAMOTO, Yoshiyuki
代理人
  • 特許業務法人深見特許事務所 FUKAMI PATENT OFFICE, P.C.
優先権情報
2013-02911918.02.2013JP
2013-02912318.02.2013JP
2013-02912618.02.2013JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) GROUP III-NITRIDE COMPOSITE SUBSTRATE AND METHOD OF PRODUCING SAME, LAYERED GROUP III-NITRIDE COMPOSITE SUBSTRATE, AS WELL AS GROUP III-NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING SAME
(FR) SUBSTRAT COMPOSITE AU NITRURE DU GROUPE III ET PROCÉDÉ DE FABRICATION ASSOCIÉ, SUBSTRAT COMPOSITE AU NITRURE DU GROUPE III STRATIFIÉ, ET DISPOSITIF SEMI-CONDUCTEUR AU NITRURE DU GROUPE III ET PROCÉDÉ DE FABRICATION ASSOCIÉ
(JA) III族窒化物複合基板およびその製造方法、積層III族窒化物複合基板、ならびにIII族窒化物半導体デバイスおよびその製造方法
要約
(EN)
A group III-nitride composite substrate (1) is a group III-nitride composite substrate (1) which is of diameter greater than or equal to 75 mm, in which a supporting substrate (11), and a group III-nitride film (13) which is of thickness greater than or equal to 50 nm and less than or equal to 10 μm, are set to adhere together, wherein: a ratio st/mt, which is of a standard deviation st of thickness with respect to the average value mt of thickness of the group III-nitride film (13), is greater than or equal to 0.01 and less than or equal to 0.5; and a ratio s0/m0, which is of a standard deviation s0 of an absolute value of an off-axis with respect to the average value m0 of absolute values of an off-axis with respect to a predetermined surface orientation surface of a main surface (13m) of the group III-nitride film (13), is greater than or equal to 0.005 and less than or equal to 0.6. As a result, provided is a group III-nitride composite substrate having a group III-nitride film which is of low cost, having a large aperture, thin film-thickness, low distribution of film-thickness, and high crystal quality, and a method of producing the same. Also provided is a layered group III-nitride composite substrate, a group III-nitride semiconductor device, and a method of producing the same.
(FR)
L'invention concerne un substrat composite au nitrure du groupe III (1) qui est un substrat composite au nitrure du groupe III (1) dont le diamètre est supérieur ou égal à 75 mm, dans lequel un substrat de support (11), et un film de nitrure du groupe III (13) qui est d'épaisseur supérieure ou égale à 50 nm et inférieure ou égale à 10 μm, sont prévus pour adhérer ensemble, dans lequel : un rapport st/mt, qui est un écart-type st de l'épaisseur par rapport à la valeur moyenne mt de l'épaisseur dans le film de nitrure du groupe III (13), est supérieur ou égal à 0,01 et inférieur ou égal à 0,5 ; et un rapport s0/m0, qui est un écart-type s0 d'une valeur absolue d'un hors-axe par rapport à la valeur moyenne m0 de valeurs absolues d'un hors-axe par rapport à une surface d'orientation de surface prédéterminée d'une surface principale (13m) du film de nitrure du groupe III (13), est supérieur ou égal à 0,005 et inférieur ou égal à 0,6. En résultat, l'invention concerne un substrat composite au nitrure du groupe III ayant un film de nitrure du groupe III qui a un faible coût, ayant une large ouverture, une épaisseur de film mince, une faible distribution d'épaisseur de film, et une qualité cristalline élevée, et un procédé de fabrication a. L'invention concerne également un substrat composite au nitrure du groupe III stratifié, un dispositif semi-conducteur au nitrure du groupe III, et un procédé de leur fabrication.
(JA)
 III族窒化物複合基板(1)は、支持基板(11)と、厚さが50nm以上10μm未満のIII族窒化物膜(13)と、が貼り合わされた直径が75mm以上のIII族窒化物複合基板(1)であって、III族窒化物膜(13)の厚さの平均値mtに対する厚さの標準偏差stの比st/mtが0.01以上0.5以下であり、III族窒化物膜(13)の主面(13m)の所定の面方位の面に対するオフ角の絶対値の平均値moに対するオフ角の絶対値の標準偏差soの比so/moが0.005以上0.6以下である。これにより、半導体デバイスの製造の際のコストを低減し、コストが低く大口径で膜厚が薄く膜厚の分布が小さく結晶品質の高いIII族窒化物膜を有するIII族窒化物複合基板およびその製造方法、積層III族窒化物複合基板、ならびにIII族窒化物半導体デバイスおよびその製造方法が提供される。
国際事務局に記録されている最新の書誌情報