処理中

しばらくお待ちください...

設定

設定

出願の表示

1. WO2013125598 - フッ素含有有機ケイ素化合物薄膜の製造装置、及び、製造方法

公開番号 WO/2013/125598
公開日 29.08.2013
国際出願番号 PCT/JP2013/054222
国際出願日 20.02.2013
IPC
C23C 14/24 2006.01
C化学;冶金
23金属質材料への被覆;金属質材料による材料への被覆;化学的表面処理;金属質材料の拡散処理;真空蒸着,スパッタリング,イオン注入法,または化学蒸着による被覆一般;金属質材料の防食または鉱皮の抑制一般
C金属質への被覆;金属材料による材料への被覆;表面への拡散,化学的変換または置換による,金属材料の表面処理;真空蒸着,スパッタリング,イオン注入法または化学蒸着による被覆一般
14被覆形成材料の真空蒸着,スパッタリングまたはイオン注入法による被覆
22被覆の方法に特徴のあるもの
24真空蒸着
C23C 14/12 2006.01
C化学;冶金
23金属質材料への被覆;金属質材料による材料への被覆;化学的表面処理;金属質材料の拡散処理;真空蒸着,スパッタリング,イオン注入法,または化学蒸着による被覆一般;金属質材料の防食または鉱皮の抑制一般
C金属質への被覆;金属材料による材料への被覆;表面への拡散,化学的変換または置換による,金属材料の表面処理;真空蒸着,スパッタリング,イオン注入法または化学蒸着による被覆一般
14被覆形成材料の真空蒸着,スパッタリングまたはイオン注入法による被覆
06被覆材料に特徴のあるもの
12有機質材料
CPC
B05D 1/02
BPERFORMING OPERATIONS; TRANSPORTING
05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
1Processes for applying liquids or other fluent materials
02performed by spraying
B05D 1/60
BPERFORMING OPERATIONS; TRANSPORTING
05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
1Processes for applying liquids or other fluent materials
60Deposition of organic layers from vapour phase
C09D 5/1637
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
5Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced
16Antifouling paints; Underwater paints
1606characterised by the anti-fouling agent
1637Macromolecular compounds
C23C 14/12
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
12Organic material
C23C 14/24
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
24Vacuum evaporation
C23C 14/243
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
24Vacuum evaporation
243Crucibles for source material
出願人
  • 旭硝子株式会社 ASAHI GLASS COMPANY, LIMITED [JP]/[JP]
発明者
  • 加藤 亮祐 KATO, Ryosuke
  • 宮村 賢郎 MIYAMURA, Masao
  • 森本 保 MORIMOTO, Tamotsu
代理人
  • 泉名 謙治 SENMYO, Kenji
優先権情報
2012-03797023.02.2012JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) DEVICE AND METHOD FOR PRODUCING FLUORINE-CONTAINING ORGANOSILICON COMPOUND THIN FILM
(FR) DISPOSITIF ET PROCÉDÉ DE PRODUCTION D'UN FILM MINCE DE COMPOSÉ ORGANOSILICIÉ CONTENANT DU FLUOR
(JA) フッ素含有有機ケイ素化合物薄膜の製造装置、及び、製造方法
要約
(EN)
Provided are a device and method of production enabling continuous deposition of a highly durable fluorine-containing organosilicon compound thin film simultaneous with conveyance of a base material. Provided is a device for producing a fluorine-containing organosilicon compound thin film, the device being provided with: a chamber; a heating container for heating a deposition raw material; a plurality of nozzles which are provided within the chamber, are connected to the heating container, and supply the deposition raw material onto a base material; and a base material conveyance mechanism for conveying the base material; the plurality of nozzles being arranged in the shape of a line so as to cross over the direction of conveyance of the base material, and a fluorine-containing organosilicon compound of the deposition raw material being either previously treated to remove solvent or being undiluted. Also provided is a method for producing a fluorine-containing organosilicon compound thin film, the method comprising: heating in a heating container a fluorine-containing organosilicon compound that either has been already treated to remove solvent or is undiluted; supplying a deposition raw material from a plurality of nozzles that are provided within a chamber, are connected to a heating container, and are arranged in the shape of a line so as to cross over the direction of conveyance of the base material; and depositing the deposition raw material onto the deposition surface of the base material while the base material is being conveyed.
(FR)
La présente invention concerne un dispositif et un procédé de production qui permettent le dépôt continu d'un film mince de composé organosilicié contenant du fluor, hautement durable, simultanément au transport d'un matériau de base. L'invention concerne un dispositif destiné à produire un film mince de composé organosilicié contenant du fluor. Le dispositif contient : une chambre ; un récipient de chauffage destiné à chauffer une matière première de dépôt ; une pluralité de buses, prévues dans la chambre, qui sont reliées au récipient de chauffage et apportent la matière première de dépôt sur un matériau de base ; et un mécanisme de transport du matériau de base, destiné à transporter le matériau de base ; la pluralité de buses étant agencée sous forme de ligne, de manière à croiser la direction de transport du matériau de base ; et un composé organosilicié contenant du fluor issu de la matière première de dépôt étant soit précédemment traité pour retirer du solvant, soit non dilué. L'invention concerne aussi un procédé de production d'un film mince de composé organosilicié contenant du fluor. Le procédé comprend : le chauffage, dans un récipient de chauffage, d'un composé organosilicié contenant du fluor, qui soit a déjà été traité pour retirer le solvant, soit est non dilué ; la fourniture d'une matière première de dépôt parmi une pluralité de buses prévues dans une chambre, reliées à un récipient de chauffage et agencées en forme de ligne, de manière à croiser la direction de transport du matériau de base ; et le dépôt de la matière première de dépôt sur la surface de dépôt du matériau de base pendant le transport de ce dernier.
(JA)
 基材を搬送しながら、高耐久性のフッ素含有有機ケイ素化合物薄膜を連続的に成膜できる製造装置および製造方法を提供する。 チャンバーと、成膜原料を加熱する加熱容器と、チャンバー内に設けられ、加熱容器と接続され、基材に成膜原料を供給する複数のノズルと、基材を搬送する基材搬送機構とを備え、複数のノズルは基材の搬送方向を横断するようにライン状に配置されており、成膜原料のフッ素含有有機ケイ素化合物は溶媒除去処理済みか、非希釈であるフッ素含有有機ケイ素化合物薄膜の製造装置、及び溶媒除去処理済みか、非希釈のフッ素含有有機ケイ素化合物を加熱容器で加熱し、チャンバー内に設けられ、加熱容器と接続され、基材の搬送方向を横断するようにライン状に配置された複数のノズルから成膜原料を供給し、基材を搬送しながら基材の被成膜面に成膜するフッ素含有有機ケイ素化合物薄膜の製造方法を提供する。
国際事務局に記録されている最新の書誌情報