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1. WO2013111676 - 光電変換素子、光電変換素子の製造方法、固体撮像装置および電子機器

公開番号 WO/2013/111676
公開日 01.08.2013
国際出願番号 PCT/JP2013/050893
国際出願日 18.01.2013
IPC
H01L 27/146 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
271つの共通基板内または上に形成された複数の半導体構成部品または他の固体構成部品からなる装置
14赤外線,可視光,短波長の電磁波または粒子線輻射に感応する半導体構成部品で,これらの輻射線エネルギーを電気的エネルギーに変換するかこれらの輻射線によって電気的エネルギーを制御するかのどちらかに特に適用されるもの
144輻射線によって制御される装置
146固体撮像装置構造
H01L 27/14 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
271つの共通基板内または上に形成された複数の半導体構成部品または他の固体構成部品からなる装置
14赤外線,可視光,短波長の電磁波または粒子線輻射に感応する半導体構成部品で,これらの輻射線エネルギーを電気的エネルギーに変換するかこれらの輻射線によって電気的エネルギーを制御するかのどちらかに特に適用されるもの
H04N 5/369 2011.01
H電気
04電気通信技術
N画像通信,例.テレビジョン
5テレビジョン方式の細部
30光または類似信号から電気信号への変換
335固体撮像素子を用いるもの
369固体撮像素子の構造,固体撮像素子と関連する回路に特徴のあるもの
CPC
G02B 3/0012
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
3Simple or compound lenses
0006Arrays
0012characterised by the manufacturing method
H01L 27/14627
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14625Optical elements or arrangements associated with the device
14627Microlenses
H01L 27/14636
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14636Interconnect structures
H01L 27/1464
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
1464Back illuminated imager structures
H01L 27/14647
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14643Photodiode arrays; MOS imagers
14645Colour imagers
14647Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
H01L 27/14685
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
14685Process for coatings or optical elements
出願人
  • ソニー株式会社 SONY CORPORATION [JP]/[JP]
発明者
  • 藤井 宣年 FUJII Nobutoshi
  • 岩元 勇人 IWAMOTO Hayato
代理人
  • 特許業務法人つばさ国際特許事務所 TSUBASA PATENT PROFESSIONAL CORPORATION
優先権情報
2012-01265425.01.2012JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) PHOTOELECTRIC CONVERSION ELEMENT, METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT, SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE
(FR) ÉLÉMENT DE CONVERSION PHOTOÉLECTRIQUE, PROCÉDÉ DE FABRICATION D'ÉLÉMENT DE CONVERSION PHOTOÉLECTRIQUE, DISPOSITIF IMAGEUR À L'ÉTAT SOLIDE ET DISPOSITIF ÉLECTRONIQUE
(JA) 光電変換素子、光電変換素子の製造方法、固体撮像装置および電子機器
要約
(EN)
This method for manufacturing a photoelectric conversion element comprises: a step wherein a first electrode is formed on a first surface side of a substrate that has two opposite surfaces; a step wherein an electrode part for external connection is formed on a second surface side of the substrate; and a step wherein an organic photoelectric conversion layer and a second electrode are formed on the first electrode after the formation of the first electrode and the electrode part.
(FR)
Cette invention concerne un procédé de fabrication d'un élément de conversion photoélectrique, comprenant : une étape consistant à former une première électrode sur une première surface d'un substrat présentant deux surfaces opposées ; une étape consistant à former une partie d'électrode, destinée à la connexion externe, sur une seconde surface du substrat ; et une étape consistant à former une couche organique de conversion photoélectrique et une seconde électrode sur la première électrode après la formation de la première électrode et de la partie d'électrode.
(JA)
 光電変換素子の製造方法は、対向する2面を有する基板の第1面側に第1電極を形成する工程と、基板の第2面側に外部接続用の電極部を形成する工程と、第1電極および電極部を形成した後、第1電極上に有機光電変換層および第2電極を形成する工程とを含む。
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