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1. WO2013111419 - 固体撮像装置

公開番号 WO/2013/111419
公開日 01.08.2013
国際出願番号 PCT/JP2012/078982
国際出願日 08.11.2012
IPC
H01L 27/14 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
271つの共通基板内または上に形成された複数の半導体構成部品または他の固体構成部品からなる装置
14赤外線,可視光,短波長の電磁波または粒子線輻射に感応する半導体構成部品で,これらの輻射線エネルギーを電気的エネルギーに変換するかこれらの輻射線によって電気的エネルギーを制御するかのどちらかに特に適用されるもの
CPC
H01L 27/14618
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14618Containers
H01L 27/14621
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
1462Coatings
14621Colour filter arrangements
H01L 27/14623
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
1462Coatings
14623Optical shielding
H01L 27/14627
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14625Optical elements or arrangements associated with the device
14627Microlenses
H01L 2924/0002
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
0001Technical content checked by a classifier
0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
H01L 31/02162
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0216Coatings
02161for devices characterised by at least one potential jump barrier or surface barrier
02162for filtering or shielding light, e.g. multicolour filters for photodetectors
出願人
  • シャープ株式会社 SHARP KABUSHIKI KAISHA [JP]/[JP] (AllExceptUS)
  • 舩尾 大輔 FUNAO, Daisuke (US)
発明者
  • 舩尾 大輔 FUNAO, Daisuke
代理人
  • 政木 良文 MASAKI Yoshifumi
優先権情報
2012-01460126.01.2012JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SOLID-STATE IMAGE PICKUP APPARATUS
(FR) APPAREIL DE CAPTURE D'IMAGE À SEMI-CONDUCTEURS
(JA) 固体撮像装置
要約
(EN)
Provided is a solid-state image pickup apparatus such that light reflected from a light blocking metal formed above light-blocked pixels or a peripheral circuit is prevented from entering light reception sections and causing flares and ghosts. One or more layers of color filters (14) are arranged as light absorbing material above a light blocking metal (12) so as to cover at least the outer periphery side of the boundary portion between the light reception pixels and the light-blocked pixels or peripheral circuit formed at the outer periphery of the light reception pixels. Further, a light blocking member (22) is arranged so that there is a portion where the light blocking member (22) and the color filters (14) overlap each other above the light blocking metal (12), and so that all portions of the light blocking metal (12) will be covered by the light blocking member and/or the color filter layers when viewed from above.
(FR)
L'invention concerne un appareil de capture d'image à semi-conducteurs conçu de sorte que la lumière réfléchie par un métal de blocage de la lumière formé au-dessus de pixels étanches à la lumière ou d'un circuit périphérique est empêchée de pénétrer dans des sections de réception de lumière et de créer des lumières ou images parasites. Une ou plusieurs couches de filtres colorés (14) sont agencées comme matériau d'absorption de lumière au-dessus d'un métal de blocage de la lumière (12) de manière à recouvrir au moins le côté périphérique extérieur de la partie limite, entre les pixels récepteurs de lumière et les pixels étanches à lumière, ou le circuit périphérique formé à la périphérie extérieure des pixels récepteurs de lumière. En outre, un élément de blocage de la lumière (22) est agencé de manière à créer une partie où l'élément de blocage de la lumière (22) et les filtres colorés (14) se chevauchent au-dessus du métal de blocage de la lumière (12), et de sorte que toutes les parties du métal de blocage de la lumière (12) soient recouvertes par l'élément de blocage de la lumière et/ou les couches de filtres colorés selon une vue en plan.
(JA)
 固体撮像装置において、遮光画素または周辺回路の上方に形成される遮光メタルからの反射光が受光部に侵入し、フレア及びゴーストの原因となるのを防ぐ。遮光メタル12の上方に光吸収材料としてのカラーフィルタ14を1又は複数層、少なくとも受光画素とその外周部に形成される遮光画素または周辺回路との外周部側の境界部分を覆うように配置し、且つ、遮光部材22を、遮光部材22とカラーフィルタ14が遮光メタル12上方において重なり部分を有し、上面から見て、遮光メタル12の全ての領域が遮光部とカラーフィルタ層の少なくとも何れか一方で覆われるように配置する。
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