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1. WO2013099084 - 有機EL素子の製造方法

公開番号 WO/2013/099084
公開日 04.07.2013
国際出願番号 PCT/JP2012/007115
国際出願日 06.11.2012
IPC
H05B 33/10 2006.01
H電気
05他に分類されない電気技術
B電気加熱;他に分類されない電気照明
33エレクトロルミネッセンス光源
10エレクトロルミネッセンス光源の製造に特に適用する装置または方法
H01L 51/50 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
51能動部分として有機材料を用い,または能動部分として有機材料と他の材料との組み合わせを用いる固体装置;このような装置またはその部品の製造または処理に特に適用される方法または装置
50光放出に特に適用されるもの,例.有機発光ダイオード(OLED)または高分子発光ダイオード(PLED)
H05B 33/26 2006.01
H電気
05他に分類されない電気技術
B電気加熱;他に分類されない電気照明
33エレクトロルミネッセンス光源
12実質的に2次元放射面をもつ光源
26電極として使用される導電物質の配置あるいは組成によって特徴づけられたもの
CPC
C23C 14/086
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
08Oxides
086of zinc, germanium, cadmium, indium, tin, thallium or bismuth
C23C 14/35
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
35by application of a magnetic field, e.g. magnetron sputtering
H01L 51/5221
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
52Details of devices
5203Electrodes
5221Cathodes, i.e. with low work-function material
H01L 51/5234
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
52Details of devices
5203Electrodes
5221Cathodes, i.e. with low work-function material
5234Transparent, e.g. including thin metal film
H01L 51/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
H05B 33/28
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33Electroluminescent light sources
12Light sources with substantially two-dimensional radiating surfaces
26characterised by the composition or arrangement of the conductive material used as an electrode
28of translucent electrodes
出願人
  • パナソニック株式会社 PANASONIC CORPORATION [JP]/[JP]
発明者
  • 青沼 昌樹 AONUMA, Masaki
代理人
  • 中島 司朗 NAKAJIMA, Shiro
優先権情報
2011-28919228.12.2011JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) METHOD OF MANUFACTURING ORGANIC EL ELEMENT
(FR) PROCÉDÉ DE FABRICATION D'UN ÉLÉMENT ÉLECTROLUMINESCENT ORGANIQUE
(JA) 有機EL素子の製造方法
要約
(EN)
Provided is a method of manufacturing an organic EL element which is provided with a pair of electrodes consisting of an upper electrode and a lower electrode, and with an organic functional layer provided therebetween, wherein the upper electrode is formed on the organic functional layer with a deposition power density of 4.5-9.0 W/cm2 using the magnetron sputtering method.
(FR)
La présente invention a trait à un procédé de fabrication d'un élément électroluminescent organique qui est équipé d'une paire d'électrodes qui est constituée d'une électrode supérieure et d'une électrode inférieure, une couche fonctionnelle organique étant prévue entre celles-ci, laquelle électrode supérieure est formée sur la couche fonctionnelle organique avec une densité de puissance de dépôt de 4,5 à 9,0 W/cm2 à l'aide d'un procédé de pulvérisation cathodique magnétron.
(JA)
 上部電極及び下部電極からなる一対の電極と、その間に設けられた有機機能層とを有する有機EL素子の製造方法であって、マグネトロンスパッタ法を用いて、4.5W/cm2以上、9.0W/cm2以下の成膜電力密度で、有機機能層上に上部電極を形成する。
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