処理中

しばらくお待ちください...

設定

設定

出願の表示

1. WO2013088983 - 固体撮像装置、固体撮像装置の駆動方法及び電子機器

公開番号 WO/2013/088983
公開日 20.06.2013
国際出願番号 PCT/JP2012/081305
国際出願日 04.12.2012
IPC
H01L 27/146 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
271つの共通基板内または上に形成された複数の半導体構成部品または他の固体構成部品からなる装置
14赤外線,可視光,短波長の電磁波または粒子線輻射に感応する半導体構成部品で,これらの輻射線エネルギーを電気的エネルギーに変換するかこれらの輻射線によって電気的エネルギーを制御するかのどちらかに特に適用されるもの
144輻射線によって制御される装置
146固体撮像装置構造
H04N 5/374 2011.01
H電気
04電気通信技術
N画像通信,例.テレビジョン
5テレビジョン方式の細部
30光または類似信号から電気信号への変換
335固体撮像素子を用いるもの
369固体撮像素子の構造,固体撮像素子と関連する回路に特徴のあるもの
374アドレス型センサ,例.MOS型ないしはCMOS型センサ
CPC
H01L 27/14603
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14603Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
H01L 27/14605
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14603Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
14605Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
H01L 27/14609
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14609Pixel-elements with integrated switching, control, storage or amplification elements
H01L 27/14612
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14609Pixel-elements with integrated switching, control, storage or amplification elements
14612involving a transistor
H01L 27/14621
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
1462Coatings
14621Colour filter arrangements
H01L 27/14623
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
1462Coatings
14623Optical shielding
出願人
  • ソニー株式会社 SONY CORPORATION [JP]/[JP]
発明者
  • 戸田 淳 TODA Atsushi
代理人
  • 稲本 義雄 INAMOTO Yoshio
優先権情報
2011-27160412.12.2011JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SOLID-STATE IMAGING DEVICE, METHOD FOR DRIVING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC INSTRUMENT
(FR) DISPOSITIF D'IMAGERIE À SEMI-CONDUCTEURS, PROCÉDÉ PERMETTANT DE COMMANDER UN DISPOSITIF D'IMAGERIE À SEMI-CONDUCTEURS ET INSTRUMENT ÉLECTRONIQUE
(JA) 固体撮像装置、固体撮像装置の駆動方法及び電子機器
要約
(EN)
The present disclosure relates to a solid-state imaging device, a method for driving a solid-state imaging device, and an electronic instrument with the purpose of providing a solid-state imaging device having a global shutter function in which sensitivity and saturated charge amount are improved and in which pixel miniaturization is possible. Another purpose of the present disclosure is to provide an electronic instrument in which said solid-state imaging device is used. A solid-state imaging device (1) having a global shutter function, wherein the first charge accumulation part (18) and the second charge accumulation part (25) are stacked in the depth direction of the substrate (12), and a vertical first transfer transistor (Tr1) transfers the signal charge from the first charge accumulation part (18) to the second charge accumulation part (25). The pixels are thereby miniaturized.
(FR)
La présente invention se rapporte à un dispositif d'imagerie à semi-conducteurs, à un procédé permettant de commander un dispositif d'imagerie à semi-conducteurs et à un instrument électronique dans le but de fournir un dispositif d'imagerie à semi-conducteurs qui a une fonction d'obturateur globale et pour lequel la sensibilité et la quantité de charge saturée sont améliorées et la miniaturisation des pixels est possible. Un autre but de la présente invention est de fournir un instrument électronique dans lequel ledit dispositif d'imagerie à semi-conducteurs est utilisé. L'invention porte sur un dispositif d'imagerie à semi-conducteurs (1) qui a une fonction d'obturateur globale pour lequel la première partie d'accumulation de charge (18) et la seconde partie d'accumulation de charge (25) sont empilées dans le sens de la profondeur du substrat (12) et un premier transistor de transfert vertical (Tr1) transfère la charge de signal de la première partie d'accumulation de charge (18) à la seconde partie d'accumulation de charge (25). Les pixels sont, de ce fait, miniaturisés.
(JA)
本開示は、画素の微細化が可能で、かつ、感度及び飽和電荷量の向上が図られたグローバルシャッタ機能を有する固体撮像装置を提供することを目的とする固体撮像装置、固体撮像装置の駆動方法及び電子機器に関する。また、その固体撮像装置を用いた電子機器を提供することを目的とする。グローバルシャッタ機能を有する固体撮像装置1において、第1電荷蓄積部18と第2電荷蓄積部25を基板12の深さ方向に積層するように構成し、第1電荷蓄積部12から第2電荷蓄積部25への信号電荷の転送は縦型の第1転送トランジスタTr1で行う。これにより、画素の微細化が図られる。
国際事務局に記録されている最新の書誌情報