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1. WO2013080851 - 金-白金-パラジウム合金ボンディングワイヤ

公開番号 WO/2013/080851
公開日 06.06.2013
国際出願番号 PCT/JP2012/080152
国際出願日 21.11.2012
IPC
H01L 21/60 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
21半導体装置または固体装置またはそれらの部品の製造または処理に特に適用される方法または装置
02半導体装置またはその部品の製造または処理
04少なくとも一つの電位障壁または表面障壁,例.PN接合,空乏層,キャリア集中層,を有する装置
50サブグループH01L21/06~H01L21/326の一つに分類されない方法または装置を用いる半導体装置の組立
60動作中の装置にまたは装置から電流を流すためのリードまたは他の導電部材の取り付け
CPC
C22C 5/02
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
5Alloys based on noble metals
02Alloys based on gold
H01L 2224/05624
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas; Manufacturing methods related thereto
04Structure, shape, material or disposition of the bonding areas prior to the connecting process
05of an individual bonding area
0554External layer
05599Material
056with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
05617the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
05624Aluminium [Al] as principal constituent
H01L 2224/45015
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
44Structure, shape, material or disposition of the wire connectors prior to the connecting process
45of an individual wire connector
45001Core members of the connector
4501Shape
45012Cross-sectional shape
45015being circular
H01L 2224/45144
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
44Structure, shape, material or disposition of the wire connectors prior to the connecting process
45of an individual wire connector
45001Core members of the connector
45099Material
451with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
45138the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
45144Gold (Au) as principal constituent
H01L 2224/48624
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
485Material
48505at the bonding interface
48599Principal constituent of the connecting portion of the wire connector being Gold (Au)
486with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
48617the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
48624Aluminium (Al) as principal constituent
H01L 2224/85205
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
85using a wire connector
852Applying energy for connecting
85201Compression bonding
85205Ultrasonic bonding
出願人
  • 田中電子工業株式会社 TANAKA DENSHI KOGYO K.K. [JP]/[JP]
発明者
  • 手島 聡 TESHIMA Satoshi
  • 千葉 淳 CHIBA Jun
  • 陳 ▲イ▼ CHEN Wei
  • 天田 富士夫 AMADA Fujio
代理人
  • 河野 尚孝 KOHNO Naotaka
優先権情報
2011-26454702.12.2011JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) GOLD-PLATINUM-PALLADIUM ALLOY BONDING WIRE
(FR) FIL DE CONNEXION D'ALLIAGE OR-PLATINE-PALLADIUM
(JA) 金-白金-パラジウム合金ボンディングワイヤ
要約
(EN)
[Problem] To provide a gold-platinum-palladium alloy bonding wire for vehicle-mounted semiconductors, which exhibits excellent reliability in the connection with aluminum pads, while being highly reliable when left at high temperatures even in cases where an epoxy resin containing no halogen substance is used, thereby capable of maintaining the electrical characteristics after being left at high temperatures. [Solution] A gold-platinum-palladium alloy bonding wire which contains 0.4-1.2% by mass of platinum, 0.01-0.5% by mass of palladium, 10-30 ppm by mass of aluminum and 10-60 ppm by mass of calcium and/or magnesium in total, with the balance made up of gold having a purity of 99.999% by mass or more.
(FR)
L'invention a pour but de proposer un fil de connexion d'alliage or-platine-palladium pour des semi-conducteurs montés sur véhicule, qui présente une excellente fiabilité dans la connexion avec des plaques d'aluminium, tout en étant hautement fiable lorsqu'il est laissé à des températures élevées même dans des cas où une résine époxy ne contenant pas de substance halogène est utilisée, étant ainsi capable de maintenir les caractéristiques électriques après avoir été laissé à des températures élevées. A cet effet, l'invention propose un fil de connexion d'alliage or-platine-palladium qui contient 0,4-1,2 % en masse de platine, 0,01-0,5 % en masse de palladium, 10-30 ppm en masse d'aluminium et 10-60 ppm en masse de calcium et/ou magnésium au total, le complément étant constitué d'or ayant une pureté de 99,999 % en masse ou plus.
(JA)
【課題】 ハロゲン物質を含有しないエポキシ樹脂を用いた場合であっても、高温放置での信頼性が高く、高温放置後の電気特性を維持することができるアルミニウムパッドとの接続信頼性に優れた車載向け半導体用の金-白金-パラジウム合金系ボンディングワイヤを提供する。 【解決手段】 白金を0.4~1.2質量%、パラジウムを0.01~0.5質量%、アルミニウムを10~30質量ppm、カルシウムまたはマグネシウムのうちの少なくとも1種を合計で10~60質量ppmおよび残部が純度99.999質量%以上の金からなる金-白金-パラジウム合金ボンディングワイヤである。
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