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1. WO2013015119 - ポリシリコン受け容器

公開番号 WO/2013/015119
公開日 31.01.2013
国際出願番号 PCT/JP2012/067739
国際出願日 11.07.2012
IPC
C01B 33/02 2006.01
C化学;冶金
01無機化学
B非金属元素;その化合物
33けい素;その化合物
02けい素
CPC
B01J 19/02
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
19Chemical, physical or physico-chemical processes in general; Their relevant apparatus
02Apparatus characterised by being constructed of material selected for its chemically-resistant properties
B01J 2219/0218
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
2219Chemical, physical or physico-chemical processes in general; Their relevant apparatus
02Apparatus characterised by their chemically-resistant properties
0204comprising coatings on the surfaces in direct contact with the reactive components
0218of ceramic
C01B 32/956
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
32Carbon; Compounds thereof
90Carbides
914Carbides of single elements
956Silicon carbide
C01B 32/984
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
32Carbon; Compounds thereof
90Carbides
914Carbides of single elements
956Silicon carbide
963Preparation from compounds containing silicon
984Preparation from elemental silicon
C01B 33/027
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
33Silicon; Compounds thereof
02Silicon
021Preparation
027by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
C01B 33/03
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
33Silicon; Compounds thereof
02Silicon
021Preparation
027by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
03by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
出願人
  • 株式会社トクヤマ TOKUYAMA CORPORATION [JP]/[JP] (AllExceptUS)
  • 崎田 学 SAKIDA, Manabu [JP]/[JP] (UsOnly)
  • 河合 秀昭 KAWAI, Hideaki [JP]/[JP] (UsOnly)
  • 若松 智 WAKAMATSU, Satoru [JP]/[JP] (UsOnly)
発明者
  • 崎田 学 SAKIDA, Manabu
  • 河合 秀昭 KAWAI, Hideaki
  • 若松 智 WAKAMATSU, Satoru
代理人
  • 小野 尚純 ONO, Hisazumi
優先権情報
2011-16243125.07.2011JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) POLYSILICON RECEPTACLE
(FR) RÉCIPIENT DE SILICIUM POLYCRISTALLIN
(JA) ポリシリコン受け容器
要約
(EN)
A polysilicon receptacle, which is positioned at the bottom of a silicon melting and deposition reactor, and which does not allow surface alteration to occur in polysilicon contained in the receptacle, is provided. The receptacle (15), which is positioned at the bottom of the silicon melting and deposition reactor (1) and is for receiving polysilicon that has melted and dropped from the inner surface of the reactor (1), is characterized in that a surface processing layer that prevents desorption of water is formed on at least the inner surface of the receptacle (15).
(FR)
L'invention porte sur un récipient de silicium polycristallin, qui est positionné au fond d'un réacteur de fusion et de dépôt de silicium et qui ne permet pas à une altération de surface de se produire dans le silicium polycristallin contenu dans le récipient. Le récipient (15), qui est positionné au fond du réacteur de fusion et de dépôt de silicium (1) et est destiné à recevoir le silicium polycristallin qui a fondu et goutté à partir de la surface interne du réacteur (1), est caractérisé en ce qu'une couche de traitement de surface qui empêche une désorption d'eau est formée sur au moins la surface interne du récipient (15).
(JA)
 Si溶融析出反応器の下部に配置されるポリシリコン受け容器であって、収容されたポリシリコンに表面変質を生じせしめないポリシリコン受け容器を提供する。 Si溶融析出反応器1の下部に配置され、該反応器1の内面から溶融落下したポリシリコンを受けるための受け容器15であって、該受け容器15の少なくとも内面に、水分の吸脱湿を防止する表面処理層が形成されていることを特徴とする。
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