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1. WO2013014967 - 太陽電池

公開番号 WO/2013/014967
公開日 31.01.2013
国際出願番号 PCT/JP2012/056859
国際出願日 16.03.2012
IPC
H01L 31/04 2006.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
31赤外線,可視光,短波長の電磁波,または粒子線輻射に感応する半導体装置で,これらの輻射線エネルギーを電気的エネルギーに変換するかこれらの輻射線によって電気的エネルギーを制御かのどちらかに特に適用されるもの;それらの装置またはその部品の製造または処理に特に適用される方法または装置;それらの細部
04光起電変換装置として使用されるもの
CPC
H01L 31/022425
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022408for devices characterised by at least one potential jump barrier or surface barrier
022425for solar cells
H01L 31/02327
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0232Optical elements or arrangements associated with the device
02327the optical elements being integrated or being directly associated to the device, e.g. back reflectors
H01L 31/056
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
056the light-reflecting means being of the back surface reflector [BSR] type
H01L 31/0747
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
072the potential barriers being only of the PN heterojunction type
0745comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
0747comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
Y02E 10/52
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
52PV systems with concentrators
出願人
  • 三洋電機株式会社 SANYO Electric Co., Ltd. [JP]/[JP] (AllExceptUS)
  • 中村 優也 NAKAMURA, Yuya [JP]/[JP] (UsOnly)
発明者
  • 中村 優也 NAKAMURA, Yuya
代理人
  • 特許業務法人 宮▲崎▼・目次特許事務所 MIYAZAKI & METSUGI
優先権情報
2011-16382327.07.2011JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) SOLAR CELL
(FR) CELLULE SOLAIRE
(JA) 太陽電池
要約
(EN)
This solar cell (1) is provided with: a photoelectric converter (10); a transparent electroconductive layer (15) provided on the surface of the photoelectric converter (10); a metal layer (17) provided on the transparent electroconductive layer (15); and an intermediate layer (20), having a smaller extinction coefficient than that of the metal layer (17), provided between the transparent electroconductive layer (15) and the metal layer (17). An evanescent light generated on the interface between the photoelectric converter (10) and the transparent electroconductive layer (15) is thereby less readily absorbed by the intermediate layer (20), and the ratio of the metal layer (17), which readily absorbs evanescent light, in the region in which evanescent light is present as a standing wave can be reduced. As a result, it is possible to suppress a decrease in light reflectivity by the metal layer (17), and to increase the utilization efficiency of light.
(FR)
L'invention porte sur une cellule solaire (1), qui comporte : un convertisseur photoélectrique (10) ; une couche électroconductrice transparente (15) disposée sur la surface du convertisseur photoélectrique (10) ; une couche métallique (17) disposée sur la couche électroconductrice transparente (15) ; et une couche intermédiaire (20), ayant un coefficient d'extinction plus petit que celui de la couche métallique (17), disposée entre la couche électroconductrice transparente (15) et la couche métallique (17). Une lumière évanescente générée sur l'interface entre le convertisseur photoélectrique (10) et la couche électroconductrice transparente (15) est ainsi moins facilement absorbée par la couche intermédiaire (20), et le rapport de la couche métallique (17), qui absorbe facilement la lumière évanescente, dans la région dans laquelle la lumière évanescente est présente en tant qu'onde stationnaire, peut être réduit. Par suite, il est possible de supprimer une diminution de réflectivité de lumière par la couche métallique (17), et d'augmenter le rendement d'utilisation de la lumière.
(JA)
本発明に係る太陽電池(1)は、光電変換部(10)と、該光電変換部(10)の表面に透明導電層(15)と、該透明導電層(15)上に金属層(17)と、透明導電層(15)と金属層(17)との間に、該金属層(17)よりも小さな消衰係数を有する中間層(20)とを備えることにより、光電変換部(10)と透明導電層(15)との界面において発生したエバネッセント光が中間層(20)に吸収されにくく、エバネッセント光が定在している領域に占める、エバネッセント光を吸収しやすい金属層(17)の割合を低くすることができ、結果として金属層(17)による光反射率の低下を抑制でき、光の利用効率を高めることができる。
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