処理中

しばらくお待ちください...

PATENTSCOPE は、メンテナンスのため次の日時に数時間サービスを休止します。サービス休止: 土曜日 31.10.2020 (7:00 午前 CET)
設定

設定

出願の表示

1. WO2013005789 - 窒化物半導体発光素子の製造方法、ウェハ、窒化物半導体発光素子

公開番号 WO/2013/005789
公開日 10.01.2013
国際出願番号 PCT/JP2012/067165
国際出願日 05.07.2012
IPC
H01L 33/32 2010.01
H電気
01基本的電気素子
L半導体装置,他に属さない電気的固体装置
33光の放出に特に適用される少なくとも1つの電位障壁または表面障壁を有する半導体装置;それらの装置またはその部品の製造,あるいは処理に特に適用される方法または装置;それらの装置の細部
02半導体素子本体に特徴のあるもの
26発光領域の材料
30III族およびV族元素のみを有するもの
32窒素を含むもの
CPC
H01L 21/0242
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
0237Materials
0242Crystalline insulating materials
H01L 21/02458
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02436Intermediate layers between substrates and deposited layers
02439Materials
02455Group 13/15 materials
02458Nitrides
H01L 21/02502
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02436Intermediate layers between substrates and deposited layers
02494Structure
02496Layer structure
02502consisting of two layers
H01L 21/0254
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02538Group 13/15 materials
0254Nitrides
H01L 21/0262
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02612Formation types
02617Deposition types
0262Reduction or decomposition of gaseous compounds, e.g. CVD
H01L 21/02661
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02656Special treatments
02658Pretreatments
02661In-situ cleaning
出願人
  • パナソニック株式会社 PANASONIC CORPORATION [JP]/[JP] (AllExceptUS)
  • 独立行政法人理化学研究所 RIKEN [JP]/[JP] (AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BE, BF, BG, BH, BJ, BR, BW, BY, BZ, CA, CF, CG, CH, CI, CL, CM, CO, CR, CU, CY, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, FR, GA, GB, GD, GE, GH, GM, GN, GQ, GR, GT, GW, HN, HR, HU, ID, IE, IL, IS, IT, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MC, MD, ME, MG, MK, ML, MN, MR, MT, MW, MX, MY, MZ, NA, NE, NG, NI, NL, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SI, SK, SL, SM, SN, ST, SV, SY, SZ, TD, TG, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, UZ, VC, VN, ZA, ZM, ZW)
  • 高野 隆好 TAKANO, Takayoshi (UsOnly)
  • 美濃 卓哉 MINO, Takuya (UsOnly)
  • 野口 憲路 NOGUCHI, Norimichi (UsOnly)
  • 椿 健治 TSUBAKI, Kenji (UsOnly)
  • 平山 秀樹 HIRAYAMA, Hideki [JP]/[JP] (UsOnly)
発明者
  • 高野 隆好 TAKANO, Takayoshi
  • 美濃 卓哉 MINO, Takuya
  • 野口 憲路 NOGUCHI, Norimichi
  • 椿 健治 TSUBAKI, Kenji
  • 平山 秀樹 HIRAYAMA, Hideki
代理人
  • 西川 惠清 NISHIKAWA, Yoshikiyo
優先権情報
2011-14950605.07.2011JP
公開言語 (言語コード) 日本語 (JA)
出願言語 (言語コード) 日本語 (JA)
指定国 (国コード)
発明の名称
(EN) METHOD OF MANUFACTURE FOR NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT, WAFER, AND NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT
(FR) PROCÉDÉ DE FABRICATION D'UN ÉLÉMENT ÉLECTROLUMINESCENT SEMICONDUCTEUR AU NITRURE, GALETTE ET ÉLÉMENT ÉLECTROLUMINESCENT SEMICONDUCTEUR AU NITRURE
(JA) 窒化物半導体発光素子の製造方法、ウェハ、窒化物半導体発光素子
要約
(EN)
In the present invention, a nitride semiconductor light emitting element is provided with a monocrystalline substrate (1), an AlN layer (2), a first nitride semiconductor layer (3) of a first conductivity type, a light emitting layer (4) made of an AlGaN-based material, and a second nitride semiconductor layer (6) of a second conductivity type. In a manufacturing method for the nitride semiconductor light emitting element, when forming the AlN layer (2), the following steps are provided: a first step, in which an aluminum-polarized AlN crystal nucleus group (2a) that makes up part of the AlN layer (2) is formed on a surface (101) of the monocrystalline substrate (1) by means of supplying aluminum raw material gas and nitrogen raw material gas; and a second step, in which the aluminum raw material gas and the nitrogen raw material gas are supplied after the first step to form the AlN layer (2).
(FR)
La présente invention concerne un élément électroluminescent semiconducteur au nitrure comprenant un substrat monocristallin (1), une couche (2) d'AlN, une première couche semiconductrice (3) au nitrure d'un premier type de conductivité, une couche électroluminescente (4) constituée d'un matériau à base d'AlGaN et une deuxième couche semiconductrice (6) au nitrure d'un deuxième type de conductivité. Dans un procédé de fabrication de l'élément électroluminescent semiconducteur au nitrure, la formation de la couche (2) d'AlN fait intervenir les étapes suivantes : une première étape lors de laquelle un groupe (2a) de germes de cristaux d'AlN polarisé par de l'aluminium, qui fait partie de la couche (2) d'AlN, est formé sur une surface (101) du substrat monocristallin (1) en amenant une matière première gazeuse d'aluminium et une matière première gazeuse d'azote ; et une deuxième étape lors de laquelle la matière première gazeuse d'aluminium et la matière première gazeuse d'azote sont amenées après la première étape pour former la couche (2) d'AlN.
(JA)
 単結晶基板1と、AlN層2と、第1導電形の第1窒化物半導体層3と、AlGaN系材料からなる発光層4と、第2導電形の第2窒化物半導体層6とを備えた窒化物半導体発光素子の製造方法において、AlN層2を形成するにあたっては、Alの原料ガスとNの原料ガスとを供給することによって単結晶基板1の上記一表面101上にAlN層2の一部となるAl極性のAlN結晶核2aの群を形成する第1工程と、第1工程の後でAlの原料ガスとNの原料ガスとを供給することによってAlN層2を形成する第2工程とを備える。
関連公開情報:
国際事務局に記録されている最新の書誌情報